1. Single Event Burnout testing of high power Schottky diodes
Presented by Pierre GARCIA
Enoal LE GOULVEN, Fabien WIDMER, Athina VAROTSOU with the support of Cesar BOATELLA-POLO
Contract No
ESA/CNES March 2017

2. This project at a glance :
Introduction
This project at a glance :
40h of beam
Around 270 Runs
20 references tested
Around 100 parts irradiated
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

3. Introduction
Silicon Schottky diodes have been traditionally considered immune to destructive SEE
Recent works published on literature have shown that silicon power Schottky diodes may be sensitive to destructive events while reverse biased under heavy ion irradiation
This activity consists of performing SEB test under heavy ions on 20 different references of 7 different manufacturers
For this study parts were provided by STMicroelectronics, Thales Alenia Space and Airbus Defence and Space
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

4. Previous campaign 2015 New generation prototype QPL product
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

5. Results Fail : IR > IR @ VRRM Number XX% : Value of the % of VRMAX
Irradiation performed at Ganil
All QPL parts considered PASS at 75%
These parts are used on space mission at 75% maximum Vr
New prototypes are considerably more sensitive to SEB
I will not be able to discuss all the result observed however it is interesting :
Décrire les codes couleur, que même si c’est rouge
Fail : IR > VRRM
Number XX% : Value of the % of VRMAX
PASS: IR < VRRM
ESA/CNES March 2017

6. Previous campaign Results
Focus on STM Schottky diode result
Two different failure signature were observed on the during the first GANIL campaign. Current step was the most common.
Ir degradation with fluence was only observed in some of the new prototypes.
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
Ajouter une comparaison avec un diode qui bouge pas
ESA/CNES March 2017

7. Parts information 1/2 Reference Diode Type SiC Manufacturer Package
VRRM
(V)
Number
of sample
STPS3045-XF54S02Y
Schottky no
STMicroelectronics
SMD 05
45V 10
STPS80H100
SMD 1
100V
STPS30170-XZ04P029
170V
STTH60400
Ultrafast
400V 8
STTH61W04CSA1
(equivalent STTH60400) 2
STPSC1006
yes
TO-220-2
600V 13
STPS40M60CR
TO-220-3
60V 15
STPSC10H065
650V 11
STPS4045CW
TO-247-3
STPS5H100BY
DPACK 5
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

8. Parts information 2/2 Reference Diode Type SiC Manufacturer Package
VRRM
(V)*
Number
of sample
35CGQ100
Schottky no
International
Rectifier
TO-254
100V* 15
45CKQ100
TO-258
100V 5
120LQ100
SMD-1 12
HFB25HJ20
Ultrafast
SMD.5
200V
80CLQ150
150V* 11
SML10SIC06SMD5
yes
SemeLAB Limited
600V 6
MBRB8H100T4G
On Semiconductor
D²PACK
BAS21LTG1
Fast Switching
SOT23
250V
1N6817
Microsemi
ThinKey™2 9
SHDC124545P
Sensitron
Semiconductor
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation *
Ajouter 4 composants de plus, et les autre 4 nouveaux en désignant comme prototype de new génération.
Souligner les 4 composant qui était en QPL en ancienne génération
ESA/CNES March 2017

9. Test procedure and setup
Irradiation performed at UCL
PASS
FAIL
IR>IRMax
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
PASS
FAIL
PIST (Post-Irradiation STress) Test : After the irradiation, a stress is applied to the diode in order to reveal any latent damage on the irradiated devices.
ESA/CNES March 2017

10. Test procedure and setup
STATUS CRITERIA
SEB / Fail: abrupt leak of Ir during irradiation
|Ir| > IR
Failed PIST: abrupt leak of Ir during stress test
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

11. SEE tests: Beam description
Irradiation facility: U.C.L.
IRRADIATION BEAM CHARACTERISTICS
Heavy Ions used :
Ions used:
124Xe35+ (62.5 MeV.cm²/mg),
83Kr25+ (LET=32.4MeV.cm²/mg),
53Cr16+ (LET=16MeV.cm²/mg),
27Al8+ (LET=5.7MeV.cm²/mg )
Fluence: cm-2 (in two steps and cm-2) for Si
Fluence: cm-2 for silicon carbide diode
ESA/CNES March 2017

12. Results Fail : IR > IR @ VRRM Number XX% : Value of the % of VRMAX
The derated accepted is 75%
I will not be able to discuss all the result observed however it is interesting :
Décrire les codes couleur, que même si c’est rouge
* Silicone carbide diode
Fail : IR > VRRM
Number XX% : Value of the % of VRMAX
PASS: IR < VRRM
ESA/CNES March 2017

13. Results PART could be FAIL but not necessary not functional
I will not be able to discuss all the result observed however it is interesting :
Décrire les codes couleur, que même si c’est rouge
* Silicone carbide diode
Fail : IR > VRRM
PASS: IR < VRRM
ESA/CNES March 2017

14. STMicroelectronics Results
* Silicone carbide diode
2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3.5µA and 20µA)
ESA/CNES March 2017

15. STMicroelectronics Results
* Silicone carbide diode
2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3.5µA and 20µA)
Parts still functional but out of criteria
IRmax = 20µA
IRmax = 3.5µA
IRmax = 3.5µA
ESA/CNES March 2017

16. Results * Silicone carbide diode ESA/CNES March 2017
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
* Silicone carbide diode
ESA/CNES March 2017

17. Internal Rectifier Results
Focus on IR Schottky diode result
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
Ajouter une comparaison avec un diode qui bouge pas
ESA/CNES March 2017

18. PARTS are still functional
Results
Focus on IR Schottky diode result
PARTS are still functional
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

19. Results
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
* Silicone carbide diode : No information on literature about the sensitivity of SiC diode
SiC diodes are most sensitive to destructive event
ESA/CNES March 2017

20. Results Degradation by step was also observed
Focus on SiC Schottky diode result
Degradation by step was also observed
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

21. Results Focus on SiC Schottky diode result
Abrupt degradation of the leakage current has been observed too
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017

22. Results Focus on SiC Schottky diode result
Increase of leakage current is directly proportional to the fluence and flux
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
These signatures were observed for the 3 references of SiC diode.
ESA/CNES March 2017

23. SiC diode technology is more sensitive than Si diode technology
CONCLUSION
11 of the 20 references tested are degraded due to heavy ions irradiation
SiC diode technology is more sensitive than Si diode technology
More investigation on SiC diode have to be performed in order to understand the different phenomenon observed
ESA/CNES March 2017

24. Thank you for your attention,
TRAD ?
Thank you for your attention,
any question ?
TRAD Gamma irradiation facility GAMRAY is accredited in compliance with ISO/IEC standard under n° for gamma irradiation, dose deposit.
ESA/CNES March 2017

25. Results Focus on SiC Schottky diode result
This increase of leakage current is directly proportional to the fluence and flux
Signatures observed on the 3 SiC reference
LVDS => prototype, essais préliminaire en IOL + investigation au laser
GR718A => prototype, investigation
ESA/CNES March 2017