1. NUV-SiPM short technology description

2. (Red-Green-Blue SiPM) (Red-Green-Blue SiPM – high density)
FBK technology evolution
Original technology
2006
RGB-SiPM
(Red-Green-Blue SiPM)
excellent breakdown voltage uniformity
low breakdown voltage temperature
dependence (gain variation < 1%/C)
higher efficiency
lower noise
NUV-SiPM
(Near-UV SiPM)
excellent breakdown voltage uniformity
low breakdown voltage temperature
dependence (gain variation < 1%/C)
high efficiency in the near-ultraviolet
very low dark noise
2012
2012
RGB-SiPM_HD
(Red-Green-Blue SiPM – high density)
small cell size with high fill factor:
- high dynamic range
- low excess noise factor

3. In this short presentation, main properties of the first
NUV-SiPM production are described.
Different layouts have been produced 1x1, 2x2, 3x3, 4x4mm2
mainly with 50x50um2 cell size.

4. Breakdown voltage Breakdown voltage uniformity on a wafer.
Temperature dependence of the
breakdown voltage.

5. Gain and noise Gain of 50x50 and 25x25um2 cells.
Gain pulse: extracted from area of
single cell signal
Gain current: extracted from ratio
between DC current and
primary dark rate
NUV-SiPM: 1x1mm2 50x50um2.
Total and primary dark count rate
at 0.5 p.e.

6. Photo-detection efficiency
PDE vs wavelength
for a NUV-SiPM and RGB-SiPM
with 50x50um2 cell, 42% fill factor.
vs Overvoltage
for a NUV-SiPM and RGB-SiPM
with 50x50um2 cell, 42% fill factor.

7. Summary
ECF=Gain current
Gain pulse

8. Conclusion Very promising technology for NUV light detection:
- high QE and high Pt in the NUV
- low primary noise
Room for optimization:
PDE:
- fill factor
- flat anti-reflective coating centered in the NUV
NOISE:
- lower excess noise factor using smaller cell