1. UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM
S o u t h e r n
M e t h o d i s t
U n i v e r s i t y
UNDERGRADUATE COURSES USING THE SMU CLEAN ROOM
EE 3311 Solid State Devices 1. students fabricate and test Silicon (Si) p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
EE 5312 Semiconductor Processing Laboratory 1. students fabricate and test Indium Phosphide (InP) Heterojunction
Bipolar Transistors (HBTs) and Gallium Arsenide (GaAs) High Electron
Mobility Transistors (HEMTs)
2. InP and GaAs based structures grown by Molecular Beam Epitaxy (MBE) at IntelliEPI, Richardson, TX
Courses made possible in part by:
Hutson Industries
Photodigm

2. Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
Packaged MOSFET device
Wafer Level MOSFET Device

3. Silicon MOSFET Test Results

4. GaAs High Electron Mobility Transistor (HEMT)
Wafer level HEMT device
HEMT structure grown by MBE at IntelliEPI
Source
Drain
Gate
HEMT device under test

5. GaAs HEMT Test Results

6. InGaAs/InP Heterojunction Bipolar Transistor
HBT structure grown by MBE at IntelliEpi
Wafer level HBT device
Base
Emitter
Collector

7. InP HBT Test Results Wafer level HBTs with various
collector, base and emitter
dimensions

8. Semiconductor Lasers AlGaInP (630 to 680 nm red emission) InGaAs/AlGaAs/GaAs (920 to 1100 nm emission) AlGaInAs and InGaAsP (1200 to 1600 nm emission)
AlGaInP structure
Refractive Index
and Near Field
Bar Level Red Lasers

9. 450 nm AlGaN Blue Semiconductor Laser
Blue Laser Epitaxial Structure
Refractive Index and Near Field
Wafer level Blue Laser Device
N-contact
P-contact

10. 1064 nm Ridge Guide Laser 1064 nm Laser Structure Refractive Index
and Near Field
1064nm Ridge Guide Semiconductor Laser

11. Band Gap Energy (Eg) vs Lattice Constant (ao) for Different Semiconductor Materials
Eg = Ephoton = hc/, or  = hc/ Eg, or  (m) = 1.24/ Eg (eV)
where h is Planck’s constant, c is the speed of light

12. MBE Technology for III-V Compound Semiconductor
MBE System
Substrate
Platen
Materials Capability
Substrate: GaAs, & InP
Group III: Al, Ga, & In
Group V: As, P, Sb, & N
N-type Dopant: Si
P-type Dopant: Be, & C (from CBr4)
Molecular
Beam Fluxes
Deposition
Source Materials
UHV Growth Chamber
Peanut butter and Jelly analogy.
Molecular Beam Epitaxy (MBE)
Impinging molecular/atomic beam fluxes are the precursors for the epitaxy growth process
Epitaxy growth process maintain lattice registration along the growth direction
MBE process grows each atomic monolayer at a time
Ultra high vacuum growth chamber: Torr base pressure
Growth of customized active device/structure on top of crystalline substrate

13. IntelliEPI’s MBE Facility in Richardson, Texas
7 MBE reactors:
One Riber 7000 (7x6”)
Three Riber 6000 (4x6”)
Three Riber 49 (4x4”)
First Riber7000 installation in III-V industry
Proprietary in-situ real-time growth monitoring technology
Dedicated operation and cleaning facilities designed to handle phosphorous for all MBE systems

14. Communications Technology Evolution
III-V semiconductors
from elements of group III and group V columns of Periodic Table
InP and GaAs are key enabling technology for all communications systems
Wireless, telecomm, satellite, fiber optics, and other high frequency systems such as collision warning radar system all require faster semiconductors like GaAs and InP
InP outperforms all existing RF/telecomm technology in terms of speed
Wireless from 2GHz to 300 GHz with 2x breakdown voltage vs. SiGe, high gain, better efficiency
Current fastest flip-flop speed is 150 GHz (from IntelliEPI/Vitesse) vs. 96GHz of SiGe

15. Competing Building Blocks - Fiber optic network example
Internet is the main driving force
data, speed, bandwidth, wireless
Both long-haul and local networks shift to fiber optic networks
Current 2.5Gbps networks are being replaced by 10Gbps (OC192) in GaAs is the electronics building block
40Gbps network will be the 2nd largest in 2006 and electronics will be dominated by InP
Silicon will be dominant for market adoption in the “late majority” and “laggard” phases
Fiber optics industry major recovery underway (2006)

16. High Speed Technology Race
InP Heterojunction
Bi-Polar Transistor (HBT)
W. Hafez, et al, IEEE Elect. Dev. Lett., Vol 24, #7, pg 346, July 2003.
600
Sources: IntelliEPI and N. Pan, UCLA.