1. Ultra Portable MOSFETs & Load Switches
Q2, 2011
Fairchild Semiconductor
MCCC LV UP

2. Contents Application Overview of Ultra Portable Products
Technology Introduction of Silicon & Package
Applications
Power Path / Battery Switches
Battery Charging
FETs for Switching Converters
Appendix

3. Application Overview

4. End Products Cell Phones / Smart Phones Cameras MP3 / PMP / Navigation
Gaming
E-Book
Medical

5. MOSFETs & Load Switches in Portable Systems
USB /
Wall Adaptor
LED Booster
Single N
N-FETKY
Charging FETs
Single P
Dual P
P-FETKY
Boost load Switch
Single N
Power Selectors
Single P
Dual P
P-FETKY
Load +
Load
Battery Protection Switches
Dual N
Single N
Load
Switch
Load
Controller
Buck Converter
P+N Combo
Dual N
Single N
Load
Switch
Load -
Battery Pack
Power Path Switch
Single / Dual P
Level Shifted L/S

6. FCS Leadership Packaging Roadmap
Fairchild Confidential
BGA
1.5mm x 1.5mm x 0.85mm
CSP
1mm x 1.5mm x 0.65mm
SC70-6
2.2mm x 2.2mm x 1mm
SuperSOT™-6
3.0m x 3.0mm x 1mm
SO-8
5mm x 6mm x 1.75mm
5mm x 6mm x 1mm
Power 56
2mm x 2mm x 0.8mm/0.55mm
MicroFET 2x2
3mm x 3mm x 0.8mm
Power Stage 33 – 8Ld
1mm x 1.5mm x 0.45mm
Power 33 8Ld
~30mm2
~9mm2
<6mm2
CSP Style
Size Optimization
1.6mm x 1.6mm x 0.55mm
MicroFET 1.6x1.6
SC75 FLMP
1.75mm x 1.7mm x0.8mm
5mm x 6mm x 0.7mm
PowerStage 56
5mm x 6mm x 0.8mm
Dual Cool 56
Dual Cool 33
3mm x 3mm x 0.7mm
Thermally Enhanced

7. Ultra Portable Packages
Package Comparison
Package
WL-CSP
MicroFET
SC-89
SC-70
SSOT-3
SSOT-6
TSSOP-8
SO-8
1.6X1.6X0.55 mm3
1X1X0.4 mm3
1.7X1.7X0.78 mm3
2X2X1.0 mm3
3X2.5X1.0 mm3
2X2X1.0 mm3
3X6.4X1.0 mm3
2X2X0.8 mm3
2X2X0.55 mm3
5.2X5.3X2.0 mm3
1X1.5X0.4 mm3
1X1.5X0.65 mm3
1.7X1.7X0.6 mm3
3.3x3.3x0.8 mm3
WL-CSP & MicroFET can SAVE PCB area comparing to Lead-type Packages and enhance the Performance
TSSOP-8
SO-8
WL-CSP
MicroFET
SC-89
SC-70
SSOT-3
SSOT-6
[MM]

8. WL-CSP WL-CSP (Wafer Level - Chip Scale Package) Advantages of WL-CSP
A package with an area smaller than the chip area. (IPC)
Advantages of WL-CSP
Complete Portfolio – First & Smallest Nch FET
Very Small Size; 1X1X0.4mm3 , 1X1.5X0.4mm3, 1X1.5X065mm3
Excellent Thermal Performance
Low inductance - no bond wires
ESD Protection with >2kV Zener (Parts with ‘Z’ suffix)
Low RDS(on) ratings with VGS=1.5V
WL-CSP 1x1.5
WL-CSP 1.0x1.0
Unit/Die Sz
1mm x 1.5mm
1mm x 1mm
Total Unit Height
0.65mm/0.4mm Max
0.4mm Max
Die Thickness
0.3mm / 0.15mm Max
0.15mm Max
Bump Height
0.28mm / 0.21mm Max
0.21mm Max
Bump Diameter
0.31mm / 0.265mm Typ
0.265mm Typ
Bump Pitch
0.5mm
Solder Bump Alloy
95.2Sn3.8Ag1.0Cu
UBM System
Backmetal
MOSFET
IPC : Institute for Interconnecting and Packaging Electronics Circuits 8

9. WL–CSP 1x1.5 and 1x1 FDZ3N513ZT Product ID VDS/VGS
Max. 4.5V (mΩ)
Config
Profile (mm) max
Size (mm)
max
Samples
Release
FDZ1905PZ
20/8
126
Dual P / Common drain
0.65
1x1.5
Released
FDZ191P 85
Single P
FDZ193P
20/12 90
FDZ197PZ 64
FDZ192NZ 33
Single N
FDZ391P
0.4
FDZ371PZ 94
1x1
FDZ372NZ 48
FDZ3N513ZT
30/5.5
462
N-ch + schottky Combo
0.6
FDZ3N513ZT 9

10. MicroFET 2x2x (0.8 / 0.55mm thickness) & 2x1.6x0.8
Product ID
VDS/VGS
Max. 4.5V (mΩ)
Configuration
Typical Application
FDMA507PZ
20/8 25
Single P
Power Switching
FDMA410NZ 23
Single N
FDMA420NZ
20/12 30
FDMA430NZ
30/12 40
FDMA291P 42
ChargeFET/Switching
FDMA510PZ
FDMA520PZ
FDMA530PZ
30/25 35
FDMA1024/1028NZ
20/(8/12)
54/68
Dual N
FDMA2002NZ
123
FDMA1027P/1027PT
120
Dual P
FDMA1025P
155
FDMA1029PZ 95
FDMA1023PZ 71
FDMA6023PZT 60
ChargeFET
FDMA3023PZ
30/8 90
FDFMA2P028NZ 68
N – FETKY
Boost FET
FDFMA3N109
FDFMA2P857
P- FETKY
FDFMA2P853/853T
FDFMA2P029Z
FDFMA2P859T
FDMA1032CZ
68/95
N + P
Step down Switching FET
Dual Channel shown
Internal Dissected view (Dual Channel)
Part # ends with a “T” -> The new 0.55mm thickness!!
Cross-sectional view
On MTK’s reference design as ChargeFET

11. MicroFET 1.6x1.6 Advantages and Features
Part FSID
Package
Description
Die Tech MOS
Application
FDFME3N311ZT
MicroFET 1.6x1.6 Thin
Single N + Schottky
PT4 Z - 30/12
Boost FET
FDME1023PZT
Dual P
ST3 Z - 20/8
Charge FET
FDFME2P823ZT
Single P + Schottky
FDME510PZT
Single P
Load Switch
FDME410NZT
Single N
PT4 Z 20/8
FDME1024NZT
Dual N
Power Switch
FDME1034CZT
Comp Pair
ST3 Z - 20/8 & PT4 20/8 Z
DC/DC Switcher
Advantages and Features
New devices with ESD Protection >1kV
Low RDS(on) VGS=1.5V
Extremely Low profile – 0.55 mm height max

12. FDMC510P in MLP3.3x3.3 Comparison with 2.5V rating FETs
Features and Advantages
-. Small Package: 3.3X3.3X0.8mm3 MLP
-. Safe Operation at Low Voltage in Portable Applications
-. Guarantee low Rds(on) at 1.5V Vgs
-. Excellent thermal performance
Vgs
1.5V
1.5V Vgs=2.5V rating
1.5V Vgs=1.5V rating
Specification
Applications
Company
Fairchild
Part No.
FDMC510P
Config.
Single P
Package
3.3X3.3X0.8
BVDSS (V) -Min. 20
VGS (V) 8
VGS(th) (V)- Max 1
RDS(ON) (mΩ) Typ / Max
4.5V
6.4 / 8
2.5V
7.6 / 9.8
1.8V
9.2 / 13
1.5V
11 / 17
Qg Typ. 83
ID (A) 18
PD(W)
2.3
Application
Load Switch
Battery
Charger 5V
BAT
System 12

13. New Release and upcoming new products (Confidential)
FDMA7630: MicroFET 2X2
FDMA7632: MicroFET 2X2
Single N-ch 30/20 V, 11A, 13 mΩ
ESD Protection
Application – Voltage Regulator (Buck)
Released, sampling now
Single N-ch 30/20 V, 9A, 19 mΩ
ESD Protection
Application – Voltage Regulator (Buck)
Released, sampling now
Vgs
Max. Rds(on) mΩ 10 13
4.5 20
Vgs
Max. Rds(on) mΩ 10 19
4.5 30
FDMB2307NZ: MicroFET 2X3
FDMA3028N: MicroFET 2X2
Dual N-ch 20/12 V common drain, 6.5A, 16.5 mΩ
ESD Protection
Application – Battery pack protection
Sampling now , release in P9
Dual N-ch 30/8 V, 3.8A, 68 mΩ
Application – Power Path Switch, OVP FET
Released, sampling Now
Vgs
Max. Rss(on) mΩ
4.5
16.5
3.1 21
Vgs
Max. Rds(on) mΩ
4.5 68
1.8
123

14. New Release and Upcoming New Products (Confidential)
FDMA905P: MicroFET 2X2
FDME905PT: MicroFET 1.6x1.6
Single P-ch 12/8 V, 10.8A, 16 mΩ
Application – Loadswitch
Sampling Now
Single P-ch 12/8 V, 8.3A, 20 mΩ
Application – Loadswitch
Sampling Now
Vgs
Max. Rds(on) mΩ
4.5 16
2.5 21
Vgs
Max. Rds(on) mΩ
4.5 21
2.5 25
FDZ8040L: WL-CSP 0.8x0.8 (0.4mm pitch)
FDZ1040L: WL-CSP 0.8x0.8 (0.4mm pitch)
Integrated simple Loadswitch
Vin operating range: 0.8~4V
85mohm 3.6V Vin
Support up to 1.2A continuous current
Low Iq: 2.1uA
Application – Power management in portable system
Sampling NOW
Release soon
Integrated simple Loadswitch
Vin operating range: 1~4V
85mohm 3.6V Vin
Support up to 1.2A continuous current
Low Iq: 1uA!!
Application – Power management in portable system
Sampling NOW
Released

15. Profile (mm) max / Ball Pitch (mm)
Upcoming New Products – WL-CSP MOSFET In Development, Sampling soon!! (Confidential)
0.8x0.8 4 balls WL-CSP MOSFET (sampling in Q211)
Product ID
VDS/VGS
Typ 4.5V (mΩ)
Config
Profile (mm) max / Ball Pitch (mm)
ESD (kV)
FDZ454N
20/8 52
Single N
0.4 / 0.4 No
FDZ453P 88
Single P
FDZ452NZ 54
1.5
FDZ451PZ 90

16. Level Shift Load Switch Portfolio
FSID
Vin Range
Von/off Range
Rds(on) Vin
Max. Current
Package
FDG6323L V V 5V
600mA
SC70-6
FDG6324L
3 - 20V 5V
FDG6331L V V
4.5V
800mA
FDG6342L V
4.5V
1500mA
FDC6323L
3 - 8V 5V
SSOT-6
FDC6324L 5V
FDC6325L 5V
1800mA
FDC6326L
FDC6329L 5V
2500mA
FDC6330L 5V
2300mA
FDC6331L
4.5V
2800mA
FDY6342L
4.5V
830mA
SC89-6

17. Dual & Single MOSFET / Integrated LS Topology Solution: SC-89
Small Size
Cost Effective
Industry Standard
ESD Zener Protection
Low Voltage Drive

18. Appendix

19. Product Information: FDZ372NZ
Features and Advantages
-. First 1X1 WL-CSP Nch MOSFET in the industry
-. Extremely Small Package: 1.0X1.0X0.4mm3 WL-CSP
-. Safe Operation at Low Vcore in Portable Applications
-. Guarantee low Rds(on) at 1.5V Vgs
-. Excellent thermal performance
Comparison with 2.5V rating FETs
Vgs
1.5V
1.5V Vgs=2.5V rating
1.5V Vgs=1.5V rating
Competition Analysis
1X1 CSP vs 2X2 MLP
Applications
Company
Fairchild
Part No.
FDZ372NZ
Config.
Nch Single
Package
1X1 WL CSP
BVDSS (V) -Min. 20
VGS (V) ±8
VGS(th) (V)- Max
0.4/ 0.7/ 1.0
RDS(ON) (mΩ) Max
4.5V
-/ 40/ 50
2.5V
-/ 45/ 60
1.8V
-/ 53/ 72
1.5V
-/ 63/ 93
Qg Typ. 6
ID (A)
4.7
PD(W)
1.7
Application
Load Switch Battery
Load
Vbat
Buck
1mm
2mm
Load
Occupies 25% of PCB area of 2X2 MLP 19

20. Product Information: FDZ192NZ
Advantages of FDZ192NZ
-. First 1X1.5 WL-CSP Nch MOSFET in the industry
-. Very Small Package Dimension: 1.0X1.5X0.65mm3
-. Safe operation at low Vcore in portable
-. Guarantee low Rds(on) at 1.5V Vgs
-. Excellent thermal performance
Comparison with 2.5V rating FETs
1.5V Vgs=2.5V rating
Vgs
1.5V
1.5V Vgs=1.5V rating
Competition Analysis
Applications
Company
Fairchild
Part No.
FDZ192NZ
Config.
Single Nch
Package
1X1.5 WL-CSP
BVDSS (V) -Min. 20
VGS (V) ±8
VGS(th) (V)- Max
0.4/ 0.7/ 1.0
RDS(ON) (mΩ) Max
4.5V 39
2.5V 43
1.8V 49
1.5V 55
Qg Typ. 12
ID (A)
5.3
PD(W)
1.9
Application
Load Switch Battery
Load
Vbat
Buck
Li-
Bat.
Controller + -
Load 20

21. Lead-frame Exposed For Low Thermal Resistance
MicroFET (MicroFET)
Advantages of MicroFET
Exposed Lead-frame ensures superior thermal dissipation even in a small footprint size.
Multiple interconnecting bonding wires can be used to lower package contribution to RDS(on)
Industry Standard Footprints
RoHS Compliant & Free From Halogenated Compounds & Antimony
0.55mm
0.8mm
Lead-frame Exposed For Low Thermal Resistance
Cross-sectional view

22. Lower Max Temp 95.1ºC Higher Max Temp 115.2ºC
Thermal Performance Comparison
Competition
Lower
Max Temp 95.1ºC
Higher
Max Temp 115.2ºC
Competition: Vishay Si5853DC Chop FET (1206-8) 3x1.9
ChipFET 3x1.9 Package
FDFMA2P853 MicroFET 2x2
Test for Pch FET only
On Minimum pad of 2 oz copper
P= V*I =0.7038*0.7163=0.504W
3x1.9 is 42% Larger Than 2x2

23. Comparative Analysis
MicroFET 1.6X1.6
MicroFET 2x2
SSOT-6
ChipFET 3x1.9
SC-70
Size
1.6mm x 1.6mm
2mm x 2mm
3mm x 3mm
3mm x 1.9mm
Area
2.56 mm^ 2
4mm ^ 2
9mm ^ 2
5.7mm ^ 2
Height
0.55 mm
0.88mm / 0.55mm
1.1mm
RӨJA - 1"x1" Single Package
70 C/W
52 C/W
78 C/W
95 C/W
300 C/W
RӨJA - 1"x1" Dual Package
86 C/W
130 C/W
350 C/W
Conclusions
MicroFET offers the leading solution for ultra small footprint, excellent thermal performance and optimized electrical performance compared to other package types
Advanced Silicon Technology ensures optimized electrical performance
MicroFET Lead frame Exposed Technology ensures superior thermal performance in a smaller package footprint

24. Power Path Switches

25. Power Path/ Battery Switch Applications
Why?
To turn off modules that are not in use
Eliminate unnecessary energy consumption and leakage current
Basic Benefits:
Save energy
Prolong battery life
MOSFETs and Load Switches
Pch FETs
Level Shift
Load Switches
Nch FETs
Block Diagram of Load Management
Buck
Load +
Load
Switch
Load
Controller
Boost
Load
Battery Pack - 25

26. 1.5V Vgs Rated Parts What’s 1.5V Rated MOSFET?
MOSFETs which have the specified LOW Rds(on) at Vgs=1.5V
Why 1.5V Rated MOSFETs ?
Vcore goes low in portable applications recently.
1.5V Rated Parts guarantee specified low Rds(on)
Comparison with 2.5V rating FETs
Vgs
1.5V
1.5V Vgs=2.5V rating
1.5V Vgs=1.5V rating

27. Example: FDZ371PZ’s Performance
Part: FDZ371PZ : P-ch WL-CSP 1X1
Test Current – 700mA.
Vin
Vgs
Surface Temperature (‘C)
Voltage drop, Vd (mV)
Power Dissipation (mW)
-4.5V
31.2 49
34.3
-2.5V
31.3 57
39.9
-1.8V
31.5 68
47.6
-1.5V
31.9 80 56
FDZ371PZ
1X1X0.4 mm3
Vgs
Rds(on)
RDS(ON) (mΩ) Max
4.5V 75
2.5V 90
1.8V
110
1.5V
150
1in2 pad with 2 oz Copper
Very Low Power Loss
Very Low Operating Temperature
Vin=4.5V
Vin=2.5V
Vin=1.8V
Vin=1.5V

28. Example: FDZ372NZ’s Performance
Part: FDZ372NZ : N-ch WL-CSP 1X1
Test Current – 700mA.
Vin
1X1X0.4 mm3
FDZ372NZ
Vgs
Surface Temperature (‘C)
Voltage drop, Vd (mV)
Power Dissipation (mW)
Rds(on)
(mΩ)
4.5V
28.3 30 21
42.8
2.5V
28.4 33
23.1 47
1.8V
28.8 38
26.6
54.3
1.5V
28.9 42
29.4 60
1in2 pad with 2 oz Copper
Very Low Power Dissipation
Very Low Operating Temperature
Vgs=4.5V
Vgs=2.5V
Vgs=1.8V
Vgs=1.5V

29. Example: FDZ192NZ’s Performance
Part: FDZ192NZ : N-ch WL-CSP 1X1.5
Test Current – 700mA.
Vin
1X1X0.65 mm3
Vgs
Surface Temperature (‘C)
Voltage drop, Vd (mV)
Power Dissipation (mW)
Rds(on)
(mΩ)
4.5V
27.5
16.8
11.76 24
2.5V
27.6
18.6
13.02
26.6
1.8V
27.7 21
14.7 30
1.5V
28.2
34.3
FDZ192NZ
Very Low Power Loss
Very Low Operating Temperature
1in2 pad with 2 oz Copper
Vin=4.5V
Vin=2.5V
Vin=1.8V
Vin=1.5V

30. Example: FDME510PZT’s Performance
Part: FDME510PZT :P-ch MicroFET 1.6X1.6
Test Current – 700mA.
Vin
1.6X1.6X0.55 mm3
Vgs
Surface Temperature (‘C)
Voltage drop, Vd (mV)
Power Dissipation (mW)
Rds(on)
(mΩ)
4.5V
28.9 23
16.1 32
2.5V 29 27
18.9 38
1.8V
29.1 33
23.1 47
1.5V
29.2 41
28.7 58
FDME510PZT
1in2 pad with 2 oz Copper
Very Low Power Loss
Very Good Thermal Performance
Vgs=4.5V
Vgs=2.5V
Vgs=1.8V
Vgs=1.5V

31. Example: FDME410NZT’s Performance
Part: FDME410NZT : N-ch MicroFET 1.6X1.6
Test Current – 700mA.
Vin
1.6X1.6X0.55 mm3
Vgs
Surface Temperature (‘C)
Voltage drop, Vd (mV)
Power Dissipation (mW)
Rds(on)
(mΩ)
4.5V
29.1 14
9.8 20
2.5V
29.2 16
11.2 22
1.8V 18
12.6 25
1.5V
29.5 21
14.7 30
FDME410NZT
1in2 pad with 2 oz Copper
Very Low Power Loss
Very Low Operating Temperature
Vgs=4.5V
Vgs=2.5V
Vgs=1.8V
Vgs=1.5V

32. Comparison with Competitor’s 1.8V Specified Part
Parts: FDMA510PZ vs Si5463EDC
(MicroFET 2X2) (ChipFET 3X1.9)
Test Current = 1A
Application – Battery Power Path Switch
Vin=3.7V
FDMA510PZ
Si5463EDC
Batt
Pch FET
System
Temperature (°C)
Vd (mV)
Pd (mW)
Rds(on) (mΩ)
Foot Print
FDMA510PZ
33.9 27
2X2 mm2
Si5463EDC
36.8 56
3X1.9 mm2
Minimum Copper Pad
FDMA510PZ
Si5463EDC
Smaller Package!
Better Performance!!

33. Level Shift Load Switches
Inrush Current
Can damage Load Switch when turning on
Can make Vin drop when turning on
Inrush Current Prevention
Lengthen Rise Time
Adding External RC can help to Lengthen Rise Time and Reduce Inrush Current
Vin
Vout
Rload
Cout
Cin Q2 Q1 R1 C1 R2
Vin/on=3.3V, Rload=10Ω, Cin=1uF, Cout=10uF, ESR=30m Ω, No C1&R2
Peak=1.75A
VIN
Von
Vout
Iload
Vin/on=3.3V, Rload=10Ω, Cin=1uF, Cout=10uF, ESR=30m Ω, C1=1uF & R2=1k Ω
No Inrush Current
VIN
Von
Vout
Iload

34. Power Path Switch Candidates
Package
Product ID
Config.
VDS/VGS
MAX
2X2 MicroFET
FDMA291P
Single P
20 / 8 42
FDMA510PZ 30
FDMA520PZ
20 / 12
FDMA530PZ
30 / 25 35
FDMA1027P
FDMA1027PT
Dual P
120
FDMA1025P
155
FDMA1029PZ 95
FDMA1023PZ 71
FDMA6023PZT 60
FDMA3023PZ
30 / 8 90
1.6X1.6 MicroFET
FDME1023PZT
142
FDME510PZT 47
2X1.6 MicroFET
FDMJ1023PZ
112
1X1.5
WL-CSP
FDZ191P 85
FDZ197PZ 64
FDZ193P
FDZ391P
FDZ192NZ
Single N
20/8 33
1X1
FDZ371PZ 94
FDZ372NZ 48
Product ID
Config.
VDS/VGS
MAX
FDMA410NZ
Single N
20/8 23
FDMA420NZ
20/12 30
FDMA430NZ
30/12 40
FDMA1024NZ
Dual N 68
FDMA2002NZ
123
FDMA1028NZ
FDME410NZT 24
FDME1024NZT 66
Excellent Thermal Performance
Very Small Size Packages
Very Low Rds(on)

35. Battery Charging

36. Charging Mechanism Charging Applications in Mobile SystemAC
Adaptor
Smart Battery
(Li-Polymer,
4.2V)
Dual P
P-FETKY
Single P
PMU
(Charging Block)
Charging Profile
Charging FETs
CV Vin
Charging Current
Battery Voltage
Precharge
Constant Current
Vin= 5V
Vbat=4.2V
Vin
Power Limited

37. Charging Waveforms Charging Profile – FDFMA2P859T (P-FETKY)
VIN[1V/div]
Vg[1V/div]
Vbat[1V/div]
ICHG[200mA/div]
CV Mode
4.2V
700mA
[500s/div]
CC Mode
Temperatures – FDFMA2P859T
Safe Operation
Temp << 150°C
700mA Charging
Max Temp=96.4 °C

38. Design-in Example Cell Phone System Block Diagram PMIC
FDZ191P
Charging FETs
FDZ191P
Power Path Switch
Wall Adaptor +
PMIC
Controller
Controller
Cell Phone
System
Actual Design-ins of FDZ191P
Battery Pack -

39. Charging FET Candidates
Package
Product ID
Config.
VDS/VGS
MAX
2X2 MicroFET
FDMA291P
Single P
20 / 8 42
FDMA510PZ 30
FDMA520PZ
20 / 12
FDMA530PZ
30 / 25 35
FDMA1027P
FDMA1027PT
Dual P
120
FDMA1025P
155
FDMA1029PZ 95
FDMA1023PZ 71
FDMA6023PZT 60
FDMA3023PZ
30 / 8 90
FDFMA2P857
P – FETKY
FDFMA2P853
FDFMA2P 853T
FDFMA2P029Z
FDFMA2P859T
FJMA790
PNP BJT
35 / 5
1.6X1.6 MicroFET
FDME1023PZT
142
FDFME2P823ZT
FDME510PZT 47
2X1.6 MicroFET
FDMJ1023PZ
112
FDFMJ2P023Z
P- FETKY
1X1.5 WL-CSP
FDZ1905PZ
Common Drain
126 (Rss)
FDZ191P 85
FDZ193P
FDZ197PZ 64
1X1 CSP
FDZ391P
FDZ371PZ 94
Excellent Thermal Performance
Very Small Size Packages
Various Configuration Available Single P, Dual P,& P-FETKY
Low Charging Current
Dual P, P-FETKY
High Charging Current
Single P

40. Switching Converters

41. Boost Converter with Nch FETKY
Vbatt
Boost Application MOSFETs
MicroFET1.6X1.6 – Nch FETKY
FDFME3N311ZT
MicroFET2X2 – Nch FETKY
FDFMA2P028NZ
FDFMA3N109
And the other Nch FETs for Boost Converter
Load
Boost Converter with Nch FETKY
Battery Voltage  Vo=5V
for Lens Motor in Camera
Battery Voltage  Vo=19V
for LED Backlight Boost

42. LED Boost Application with FDZ3N513ZT
Test Circuit
Components
L=4.7uH, Irms=0.59A, Isat=0.68A, DCR=0.285Ω (SD3110-4R7-R; Coiltronics)
Cin=10uF / Cout=2.2uF
Fsw=1MHz
Vin=3.7V
Vo=21V / 17.5V
Vo=21V / 17.5V
Vg=3.7V
Load
50Ω

43. Schematic
Not Used

44. LED Boost Performance @ Vo=17.5V

45. LED Boost Performance @ Vo=21V

46. Buck converter with N+P Combo
Load
Buck Converter Application MOSFETs
MicroFET2X2
FDMA1032CZ (N+P Combo)
MicroFET1.6X1.6
FDME1034CZT (N+P Combo)
Product ID
Configuration
VDS/VGS
Max. 4.5V (mΩ)
FDME1034CZT
N + P
20/8
66/142
FDMA1032CZ
20/12
68/95

47. Nch FETKY / Nch Single / N+P Combo
Package
Product ID
Config.
VDS/VGS
MAX
2X2 MicroFET
FDFMA2P028NZ
N – FETKY
20/12 68
FDFMA3N109
30/12
123
FDMA410NZ
Single N
20/8 23
FDMA420NZ 30
FDMA430NZ 40
FDMA1024NZ
Dual N 54
FDMA1028NZ
FDMA2002NZ
1.6X1.6 MicroFET
FDME410NZT 24
FDME1024NZT 66
1X1.5
WL-CSP
FDZ192NZ 33
1X1
FDZ372NZ
‘20/8 48
Product ID
Configuration
VDS/VGS
Max. 4.5V (mΩ)
FDME1034CZT
N + P
20/8
66/142
FDMA1032CZ
20/12
68/95

48. 1.5V Rated P-Channel MOSFET
Part Numbers Including ‘Z’ Indicated ESD (Zener) Protected Gate Structures
New Product Development
New Release
Released

49. 1.5V Rated N-Channel MOSFET
Part Numbers Including ‘Z’ Indicated ESD (Zener) Protected Gate Structures
New Product Development
New Release
Released

50. Thank You!