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University of Illinois at Chicago
European Workshop on Photocathodes for Particle Accelerator Applications June 6-8, 2016 UIC Characterization of a PbTe(111) photocathode W. Andreas Schroeder Physics Department University of Illinois at Chicago Tuo Li Benjamin Rickman National Science Foundation PHYS
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UIC Electron beam (pulse) quality
RMS transverse emittance: … a conserved quantity in a ‘perfect’ system. ESC Ecath Photocathode Image charge Laser pulse Electron pulse Surface charge density x0 determined by laser spot size and limited by Child’s Law: pT0 is an intrinsic property of the photocathode material: … the standard expression. D.H. Dowell & J.F. Schmerge, Phys. Rev. ST – Acc. & Beams 12 (2009) K.L. Jensen et al., J. Appl. Phys. 107 (2010)
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UIC Photoemission Theory I
− The semi-classical three-step ‘Spicer’ model ħω EF 1 2 3 e- Vacuum Photocathode 1. Photoexcitation 2. Transport to surface 3. Emission from surface Transport Real electronic band Photoexcitation into upper state near vacuum level Emission from upper excited state High quantum efficiency (PE) AND Response time Lifetime (ps-ns) NOT suitable for UED Examples: NEA GaAs, KCsSb, GaSb, diamond, Cu(111)? C.N. Berglund & W.E. Spicer, Phys. Rev. 136, A1030-A1044 (1964) P.J. Feibelman & D.E. Eastman, Phys. Rev. B 10, (1974)
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UIC Photoemission Theory II EF e- Vacuum Photocathode ħω
− The ‘quantum mechanical’ one-step model Photoexcitation into a virtual state (excited copy of filled band) emitting into the vacuum in one step Low PE ~ 10-5 to 10-7 ‘Instantaneous’ emission process Suitable for UED Examples: Most metals G.D. Mahan, Phys. Rev. B 2, (1970)
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UIC Band Structure Effects pT pF pT,max. E ħω EF E pT pF pT,max. E ħω
− Transverse momentum pT conserved in photoemission ‘Classical’ metal (m* = m0) Metal with m* < m0 > Photoemitting states in red: E and pT conserved Vacuum level Virtual excited states in ‘one-step’ photoemission Band states for which E 0
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UIC Band Structure Effects pT pF pT,max. E ħω EF E pT pF pT,max. E ħω
− Transverse momentum pT conserved in photoemission ‘Classical’ metal (m* = m0) Metal with m* < m0 > Vacuum level
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Low m* hole-like states preferred
Vacuum level pT E E ħω EF+ħω Electron-like (m* < m0) Hole-like (m* < m0) Electron-like vs. Hole-like States UIC − pT0 and its sensitivity to Te Higher pT electrons at high E More high pT states occupied as Te increases Lower pT electrons at high E Less high pT states occupied as Te increases Low m* hole-like states preferred
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UIC PbTe Band Structure Lightly p-type PbTe crystal
− Evaluation using QUANTUM ESPRESSO Lightly p-type PbTe crystal EF at top of VBM at L point of Brillouin zone Very low hole mass (m* = 0.022m0) transverse to -L direction (111)-face emission (111) NOTE: For emission from (111) face, no CBM exist above 2eV at L point.
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DFT-based thin-slab prediction:
UIC pPbTe(111): ϕ(111) − Evaluation using thin slab technique (111) Rock salt (simple cubic) crystal structure of PbTe Pb or Te terminated regions on (111) surface Different due to surface dipole orientations Pb + _ Te PbTe -V +V DFT-based thin-slab prediction: ϕ(111),Te ϕ(111),Pb eV 4.53eV … Photoemission possible for ħω = 4.75eV C. J. Fall et al., Journal of Physics: Condensed Matter 11, 2689 (1999)
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DFT-based photoemission prediction:
UIC pPbTe(111): pT0 − ‘One-step’ photoemission from L-point VBM with m* = 0.022m0 Emitting states for E = 0.3eV E, pT conservation PLUS Barrier transmission, T(pz,pz0) DFT-based photoemission prediction: pT0 0.1 (m0.eV)1/2 for ħω = 4.75eV T. Li et al., J. Appl. Phys. 117, (2015)
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UIC pT0 Measurement: Solenoid Scan 2W, 250fs, 63MHz , diode-
pumped Yb:KGW laser ~4ps at 261nm (ħω = 4.75eV) YAG scintillator optically coupled to CCD camera Beam size vs. magnetic coil (lens) current measured Analytical Gaussian (AG) pulse propagation model to extract ΔpT0 J.A. Berger & W.A. Schroeder, J. Appl. Phys. 108 (2010)
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UIC PbTe(111): Solenoid Scan Results PbTe(111) ħω = 4.75eV
− Comparison with AG pulse propagation model Current2 (A2) HW1/eM Spot Size (mm) PbTe(111) ħω = 4.75eV pT0(AG model) [(m0.eV)1/2] 0.1 0.2 0.3 0.4 0.5 pT0 = 0.29(0.02) (m0.eV)1/2 n/Δx 0.4 mm.mrad/mm
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UIC PbTe(111): Experiment vs. Theory PbTe(111): DFT analysis Dowell
Padmore Dowell ħω < ϕ Expt. result: pT0 = 0.29 (m0.eV)1/2 Proc. FEL 2013, TUPSO83, pp Expected range of pT0 from DFT
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UIC Work Function Variation 1st Fourier component (h = 2ϕ/)
− pT0 increase due to Ecath perturbation by ϕ + _ ϕ x PbTe(111) Pb Te Ecath Esurface 1st Fourier component (h = 2ϕ/) dominates pT0 increase: … ; pT0(ϕ) 0 as Effect insignificant S. Karkare & I. Bazarov, Phys. Rev.. Appl. 4 (2015)
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UIC Semiconductor Physics For lead chalcogenides,
− Depletion region of p-type PbTe (NA 1016cm-3) Energy z VB CB Eg PbTe Vacuum -zd EF For lead chalcogenides, EF ‘pinned’ at mid-gap at surface Length of depletion region 1m … Eg = 0.34eV; r 400 NOTE: -1 23nm at 261nm Ed Depletion region; No free charges Pure dielectric/vacuum interface
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LARGE internal E// at dipole direction changes
UIC Internal Fields: ϕ(x) − 1-D extension of Phys. Rev.. Appl. 4 (2015) into depletion region L ϕ z x Vacuum PbTe -zd Ecath Ed & Ecath Esurface (internal) Esurface Analysis using (i) (ii) E// conserved (iii) D conserved Total internal field: LARGE internal E// at dipole direction changes
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UIC E//(internal) Estimate Near atomic-scale ‘flip’ of
− Realistic ϕ(x) Near atomic-scale ‘flip’ of PbTe dipoles; so expect … for L/2 < x < L/2 and where lattice constant a = 6.46Å Fourier series for ϕ(x) terminates at n L/a Wafer polish L 0.1 1m L ϕ z x Vacuum PbTe -zd Esurface (internal) Esurface a ~ 1MV/m expected
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UIC Lattice Distortion Zero-field DFT not valid PbTe properties:
− Due to E//(int) PbTe properties: - Relative permittivity, r 400 - Lattice constant, a = 6.46Å Number density of bulk Pb-Te dipoles, - Ionic charge, q 0.2e Linear dielectric response: … as r large 0.1 … for E = 1MV/m Zero-field DFT not valid Significant band structure distortion expected
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UIC PbTe(111): Photoemission Efficiency At 261nm: n = 0.76 +1.80i
− Faraday cup measurement 106 Photons/Pulse Electrons/pulse PE 5.110-6 e-/ PbTe(111) ħω = 4.75eV i 60 p-polarization At 261nm: n = i TIR at i 60 BUT Rp = 0.12 Photoemission from absorbed evanescent wave NOTE: At i 0, R 0.52 PE(0) 0.55PE(60) = 2.810-6 e-/ N. Suzuki & S. Adachi, Jpn. J. Appl. Phys. 33 (1994) 193
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UIC Summary “Theory-driven experimental studies of planar photocathodes” Emission from low m* states: pF > pT,max Lower pT0 Oriented single crystal photocathodes (ħω > (ijk)) ‘Hole-like’ emission states are preferred: Even lower pT0 and less sensitive to Te (e.g., laser heating) PbTe(111): Emission from VBM with m* = 0.022m0 pT0 = 0.29(0.02) (m0.eV)1/2 … 2 value predicted by DFT analysis Perturbation of band structure by Einternal due to dipole ?? Future work GaSb(001) Bi(111) Mo(001) Nb(001) … Tunable UV laser source: Measurement of ϕ (in situ) and pT0(ħω) Search for ultra-low pT0 solid-state photocathodes: pT0 approaching cold atom electron sources TID issues? X
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UIC Thank You!
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