1. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Schematic drawing of device geometry and boundary conditions simulated in this paper: The nanoscale heat source embedded in the substrate, which is similar to the heat generation and transport in the MOSFET device

2. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Quadratic rectangular element (left) and shape functions φ(x, y) on the [0 1] × [0 1] (right)

3. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Generated gird

4. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Comparison of temperature distribution obtained from the finite element method with results of Saghatchi and Ghazanfarian [41] for Kn = 0.1 at t* = 10

5. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Comparison of transient temperature distribution at the centerline using the Boltzmann equation, the ballistic-diffusive equations, and the DPL model for Kn = 10 at t* = 1

6. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Comparison of transient entropy production distribution at the centerline using the DPL heat conduction model without and with temperature boundary condition for Kn = 0.1 and Ω = 0.4

7. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Comparison of transient entropy production distribution at the centerline using the DPL heat conduction model without and with temperature boundary condition for Kn = 1 and Ω = 0.4

8. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Comparison of transient entropy production distribution at the centerline using the DPL heat conduction model with and without temperature jump boundary condition for Kn = 10 and Ω = 0.4

9. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Transient total entropy generation inside the transistor with and without jump boundary condition for different Knudsen numbers for Ω = 0.4: (a) Kn = 0.1, (b) Kn = 1, and (c) Kn = 10

10. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Total entropy productions as a function of Knudsen number. Two data sets are from simulation (square) and curve-fitting (line).

11. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Distribution of total entropy generation due to heat transfer as a function of Knudsen number and Ω factor at t* = 100: (a) without a temperature-jump boundary condition and (b) with a temperature-jump boundary condition

12. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Comparison of results of BDE, BTE, Fourier law, and present DPL model, heat flux distribution on the centerline of transistor at t = 10 ps inside the transistor

13. Date of download: 10/15/2017
Copyright © ASME. All rights reserved.
From: Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model
J. Heat Transfer. 2017;139(12): doi: /
Figure Legend:
Comparison of the evolution of the total equilibrium and the nonequilibrium entropy production inside the transistor