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Photoluminescence Excitation Spectroscopy (PLE) of Atomic Layer Epitaxy (ALE) Passivated Materials for Power Electronics Elizabeth Grubbs1, Hong Zhou1,

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Presentation on theme: "Photoluminescence Excitation Spectroscopy (PLE) of Atomic Layer Epitaxy (ALE) Passivated Materials for Power Electronics Elizabeth Grubbs1, Hong Zhou1,"— Presentation transcript:

1 Photoluminescence Excitation Spectroscopy (PLE) of Atomic Layer Epitaxy (ALE) Passivated Materials for Power Electronics Elizabeth Grubbs1, Hong Zhou1, Zachary Juliot2, James E. Moore3, Jingyun Zhang1, Peide Ye1, Mark Lundstrom1, Peter Bermel1 1 School of Electrical and Computer Engineering and 2School of Mechanical Engineering, Purdue University, West Lafayette, IN 47907 3Naval Research Laboratory, Washington, DC 20375 PLE can be utilized to conduct multiprobe characterizations of unique materials and devices Goals: (1) characterize GaN samples via PLE (2) Extract recombination parameters via SENTAURUS PLE model (3) Evaluate passivation quality your university logo here NEEDS Annual Review: May 8-9, 2017

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