Presentation is loading. Please wait.

Presentation is loading. Please wait.

Subject Name: Fundamentals Of CMOS VLSI Subject Code: 10EC56

Similar presentations


Presentation on theme: "Subject Name: Fundamentals Of CMOS VLSI Subject Code: 10EC56"— Presentation transcript:

1 Subject Name: Fundamentals Of CMOS VLSI Subject Code: 10EC56
Prepared By: Aswini N, Praphul M N Department: ECE Date: 10/11/2014 Engineered for Tomorrow Prepared by : MN PRAPHUL & ASWINI N Assistant professor ECE Department Date : 11/10/14

2 Circuit design process
Engineered for Tomorrow Unit 2 Circuit design process

3 Syllabus MOS Layers. Stick diagram. Design rules and layout Examples
Engineered for Tomorrow Syllabus MOS Layers. Stick diagram. Design rules and layout Examples

4 MOS layers MOS circuits are formed on four basic layers: N-diffusion
Engineered for Tomorrow MOS layers MOS circuits are formed on four basic layers: N-diffusion P-diffusion Polysilicon Metal These layers are isolated by one another by thick or thin silicon dioxide insulating layers. Thin oxide mask region includes n-diffusion / p-diffusion and transistor channel.

5 Engineered for Tomorrow
Stick diagrams Stick diagrams may be used to convey layer information through the use of a color code. For example: n-diffusion --green poly red blue metal yellow implant black contact areas

6 Encodings for NMOS process:
Engineered for Tomorrow Encodings for NMOS process:

7 Encodings for CMOS process:
Engineered for Tomorrow Encodings for CMOS process: Figure shows when a n-transistor is formed: a transistor is formed when a green line (n+ diffusion) crosses a red line (poly) completely. Figure also shows when a p-transistor is formed: a transistor is formed when a yellow line(p+ diffusion) crosses a red line (poly) completely

8 Encoding for BJT and MOSFETs:
Engineered for Tomorrow Encoding for BJT and MOSFETs: layers in an nMOS chip consists of a p-type substrate paths of n-type diffusion a thin layer of silicon dioxide paths of polycrystalline silicon a thick layer of silicon dioxide paths of metal (usually aluminium) a further thick layer of silicon dioxide

9 nMOS depletion inverter diagrams
Engineered for Tomorrow nMOS depletion inverter diagrams schematic stick diagram layout

10 CMOS inverter diagrams
Engineered for Tomorrow CMOS inverter diagrams schematic stick diagram layout

11 NAND gate implementation using nmos depletion
Engineered for Tomorrow NAND gate implementation using nmos depletion schematic stick diagram

12 NOR gate implementation using nmos depletion
Engineered for Tomorrow NOR gate implementation using nmos depletion schematic stick diagram

13 NAND gate implementation using CMOS
Engineered for Tomorrow NAND gate implementation using CMOS schematic stick diagram

14 NOR gate implementation using CMOS
Engineered for Tomorrow NOR gate implementation using CMOS schematic stick diagram

15 Lambda based Design Rules:
Engineered for Tomorrow Lambda based Design Rules: Design rules include width rules and spacing rules. Mead and Conway developed a set of simplified scalable λ -based design rules, which are valid for a range of fabrication technologies. In these rules, the minimum feature size of a technology is characterized as 2 λ . All width and spacing rules are specified in terms of the parameter λ .

16 Design rules for the diffusion layers and metal layers
Engineered for Tomorrow Design rules for the diffusion layers and metal layers Figure shows the design rule n diffusion, p diffusion, poly, metal1 and metal 2. The n and p diffusion lines is having a minimum width of 2λ and a minimum spacing of 3λ. Similarly it shows for other layers.

17 Design rules for transistors and gate over hang distance
Engineered for Tomorrow Design rules for transistors and gate over hang distance Figure shows the design rule for the transistor, and it also shows that the poly should extend for a minimum of 2λ beyond the diffusion boundaries.(gate over hang distance)

18 Engineered for Tomorrow
Via VIA is used to connect higher level metals from metal1 connection. Figure shows the design rules for contact cuts and Vias. The design rule for contact is minimum 2λx2λ and same is applicable for a Via.

19 Buried contact and Butting contact
Engineered for Tomorrow Buried contact and Butting contact Buried contact is made down each layer to be joined Butting contact The layers are butted together in such a way the two contact cuts become contiguous

20 CMOS LAMBDA BASED DESIGN RULES:
Engineered for Tomorrow CMOS LAMBDA BASED DESIGN RULES: Figure shows the rules to be followed in CMOS well processes to accommodate both n and p transistors

21 BASIC PHYSICAL DESIGN FLOW
Engineered for Tomorrow BASIC PHYSICAL DESIGN FLOW

22 SCHEMATIC AND LAYOUT OF BASIC GATES
Engineered for Tomorrow SCHEMATIC AND LAYOUT OF BASIC GATES a) CMOS INVERTER NOT GATE Schematic Stick diagram Layout

23 Schematic Stick diagram Layout
Engineered for Tomorrow b) NAND GATE Schematic Stick diagram Layout

24 Engineered for Tomorrow

25 TRANSMISSION GATE Symbol schematic stick diagram layout
Engineered for Tomorrow TRANSMISSION GATE Symbol schematic stick diagram layout


Download ppt "Subject Name: Fundamentals Of CMOS VLSI Subject Code: 10EC56"

Similar presentations


Ads by Google