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Review for Final Exam MOSFET and BJT Basis of amplifiers

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Presentation on theme: "Review for Final Exam MOSFET and BJT Basis of amplifiers"β€” Presentation transcript:

1 Review for Final Exam MOSFET and BJT Basis of amplifiers
Obtaining linear amplification Small-signal voltage Gain Equivalent-circuit models: Ο€ model and T model Basic configurations and Biasing Analyze discrete-circuit amplifiers

2 MOSFET 𝑖 𝐷 = 1 2 π‘˜ β€² 𝑛 π‘Š 𝐿 𝑣 𝐺𝑆 βˆ’ 𝑉 𝑑𝑛 2 (1+πœ† 𝑣 𝐷𝑆 )
𝑖 𝐷 = π‘˜ β€² 𝑛 π‘Š 𝐿 𝑣 𝐺𝑆 βˆ’ 𝑉 𝑑𝑛 2 (1+πœ† 𝑣 𝐷𝑆 ) π‘Ÿ π‘œ = 𝑑 𝑖 𝐷 𝑑 𝑣 𝐷𝑆 βˆ’1 π‘€π‘–π‘‘β„Ž 𝑣 𝐺𝑆 π‘π‘œπ‘›π‘ π‘‘π‘Žπ‘›π‘‘ π‘Ÿ π‘œ = 𝑉 𝐴 𝐼 β€² 𝐷 𝐼 β€² 𝐷 =

3

4 BJT

5 Collector current Base current Emitter current
VT : the thermal potential Ξ² is common-emitter current gain

6 Minority-Carrier Distribution

7 Equivalent Circuit Models

8

9 6.3 BJT Circuit at DC Use simple model: |VBE|=0.7V for a conducting transistor and |VCE|=0.2V for a saturated transistor Accurate model will increase complexity and impede insight in design SPICE simulation in the final stage of design

10 Basis of amplifiers

11 7.1.3 The voltage-transfer characteristics
VTC is non-linear: For BJT:

12 Obtaining Linear Amplification by Biasing the Transistor
A dc voltage VGS is selected to obtain operation at a point Q on the segment AB of the VTC Q: bias point or dc operation point, or quiescent point The signal to be amplified is vgs(t)

13 Example 7.1 Solution: VGS=0.6V, VOV=0.2V

14 Small-Signal Operation and Models
7.2.1 The MOSFET Case

15 The signal current in the drain terminal
Small-signal condition:

16 Small-signal voltage gain

17 Modeling the Body effect

18 Collector current and Transcoductance
If:

19 Equivalent circuit models

20

21 Configurations

22 7.4 Biasing To establish in the drain (collector) a dc current that is predictable, and insensitive to variations in temperature and to large variations in parameter values between devices of the same type; To locate the dc operating point in the active region and allow required output signal swing without the transistor leaving the active region.

23 Biasing The MOSFET case
- E.g., biasing by fixing VG and connecting a Rs

24 Example 7.11 Solution: design the resistance by distributing VDD into 3 equal part on RD, transistor VDS and RS (each part = 5 V)

25 7.5 Discrete-Circuit Amplifiers (self-reading)
A. A common-source (CS) amplifier

26 C. A CE amplifier with an emitter resistance Re With Re must use T Model


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