1. TimePix3 status and protection
Yevgen Bilevych
Amsterdam

2. Main technological steps for the formation of structure
TimePix / SU-8 / Al grid
1. Formation of protection layer
2. Deposition of SU-8
3. Aluminum deposition
4. Formation of structure “support” / grid

3. TimePix TimePix3 16120 mm 16210 mm 14111 mm 14110 mm 107 single chips
Surface materials:
- Aluminum (aluminum oxide)
- Silicon nitride
- Silicon oxide
- Thickness 725 µm

4. Protection layer formation
TimePix
TimePix3

5. TPX3
Polyimide mask

6. Dykes shape, size and location
TimePix
TimePix3
16120 mm
16210 mm
14111 mm
14100 mm
lost area ~ 9,4%
lost area ~ 3,1%

7. TimePix3

8. TimePix3/SU-8 dykes

9. TimePix3

10. TimePix3/SU-8 dykes (top and side)

11. TimePix3

12. TimePix3/SU-8 dykes (bottom and side)

13. TimePix3

14. TimePix3/SU-8 dykes (side)

15. TPX3
SU-8 mask

16. TimePix3/SU-8 dykes/Al grid

17. TimePix3/SU-8 dykes/Al grid

18. TimePix3/SU-8 dykes/Al grid

19. TimePix3/SU-8 dykes/Al grid

20. TPX3
Al grid mask

21. TPX3
Bottom electrode mask

22. Protection layer formation
Two critical points
Protection layer formation
Al layer deposition
AltaCVD cluster line
EvaTec CLUSTERLINE® 200

23. High pressure water jet
TimePix
W0064
EN5MX1X
High pressure water jet
O2 plasma
HNO3 fuming

24. High pressure water jet
TimePix
W0065
EX5MVTX
High pressure water jet
O2 plasma

25. W0064
W0065

28. Initial
wafer
surface
preparation!!!

29. No
delay
after Al
deposition!!!

30. Plans Silicon nitride deposition onto W0066 EV5MWCX (55 A-type chips)
Complete test run with TPX3 masks set
TPX3 (Wafer 15) / InGrid run