1. Date of download: 10/20/2017
Copyright © ASME. All rights reserved.
From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application
J. Electron. Packag. 2016;138(1): doi: /
Figure Legend:
Cumulative structure function of 3 W LED for various boundary conditions measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

2. Date of download: 10/20/2017
Copyright © ASME. All rights reserved.
From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application
J. Electron. Packag. 2016;138(1): doi: /
Figure Legend:
Variation of junction temperature rise with respect to boundary conditions measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

3. Date of download: 10/20/2017
Copyright © ASME. All rights reserved.
From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application
J. Electron. Packag. 2016;138(1): doi: /
Figure Legend:
Surface morphology of (a) bare, (b) 400 nm, and (c) 800 nm ZnO thin film coated on the Cu substrates

4. Date of download: 10/20/2017
Copyright © ASME. All rights reserved.
From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application
J. Electron. Packag. 2016;138(1): doi: /
Figure Legend:
Change in CCT of 3 W LED for various boundary conditions measured at (a) 100 mA, (b) 350 mA, and (c) 700 mA

5. Date of download: 10/20/2017
Copyright © ASME. All rights reserved.
From: Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application
J. Electron. Packag. 2016;138(1): doi: /
Figure Legend:
Variation of Lux of 3 W LED for various boundary conditions observed at (a) 100 mA, (b) 350 mA, and (c) 700 mA