1. Brokerage Event SINANO Institute:
UAB presentation (1/3)
Universitat Autonoma Barcelona (UAB)
Montserrat Nafría
Reliability of Electron Devices and Circuits (REDEC) group research is focused on the reliability and variability of CMOS nanoelectronic devices, emerging devices and integrated circuits.  Electrical characterization and modelling of the device time-dependent variability in these technologies is carried out adopting a multilevel scale, covering from the nanoscale to the device and circuit levels. The aim is the development of physics-based compact models for the reliability circuit simulators required in the Design-for-Reliability context. This approach is extended to other emerging nanoelectronic devices, as Resistive Switching and graphene based devices.

2. Brokerage Event SINANO Institute:
UAB presentation (2/3)
Proposed expertise or activities to offer
Characterization and modeling of the aging mechanisms (RTN, BTI, HCI) in advanced nanoelectronic devices, including process-related variability. Nanoscale (with CAFM) and device level evaluation.
Compact modelling of the aging mechanisms, for their inclusion in circuit reliability simulators.
Resistive Switching devices. Device characterization and modelling. Neuromorphic computing architectures.
Characterization (nanoscale and device level) of graphene-based nanodevices.
Keywords
reliability, variability, electrical characterization, Atomic Force Microscopy, device aging, compact modeling, TCAD simulations, Resistive Switching, RRAM, Graphene devices, neuromorphic hardware.
Related Call (s)
ICT-02-[2018], ICT-09-[2019], ICT–21-[2018], ICT-35-[2019], DT-NMBP , DT-NMBP
Areas
KET: electrical characterization and reliability (variability) of CMOS and emerging technologies. Bridge the gap between device and circuit applications.

3. Brokerage Event SINANO Institute:
UAB presentation (3/3)
Thank you