1. Basic Electronics Bhavin V Kakani
Electronics & Communication Engineering, IT-NU
D-Block, Room No. 100, Ext. 421

2. Course Details: Course Code : EC321
Course Title : Basic Electronics
Teaching scheme : Lecture – 03 hours
Tutorial hours
Practical – 02 hours
Credit : 04

3. Prof. Rachna Sharma (Course Coordinator)
Course Instructors
Prof. Twinkle Bhavsar
Prof. Rachna Sharma (Course Coordinator)
Prof. Bhavin Kakani

4. Course Objective:
“To learn fundamentals and all the aspects of the electronic devices and circuits, starting from semiconductor diodes, transistors to amplifiers, power supplies and design of different types of electronics circuits.”

5. Course Learning Outcomes:
After successful completion of this course, student will be able to: 1. Understand the fundamentals of various basic semi-conductor devices and principles of analog electronics 2. Apply the knowledge of basic semi-conductor devices to realize the working of basic electronic circuits 3. Design basic electronic circuits

6. Course Syllabus
Semiconductor Diodes: Classification of semiconductors, conductivity of semiconductors, Theory of PN-Junction Diode, Energy band structure, Diode Resistance, Transition Capacitance, Diffusion Capacitance,    Junction Diode Switching Characteristics, Break-down in Junction diode, PN Diode Applications, Zener diode, Varactor Diode, Schottky Diode, LED and Laser Diode.
Bipolar Junction Transistor: Construction, Biasing, NPN, PNP transistors, types of configurations, Break-down in transistors, Bias stability, methods of transistor biasing, bias compensation, heat sink
Field Effect Transistor: Construction of FET, Operation of JFET, characteristic parameters of JFET, Transfer characteristics of FET, comparison of JFET and BJT, applications of JFET, MOSFET, enhanced MOSFET, depletion MOSFET, comparison of MOSFET with JFET
Amplifiers: small signal h-parameters, Classification, Single Stage Amplifier, FET amplifier, classification based on biasing condition, multistage amplifier.

7. Operational Amplifier: Ideal Opamps, Opamp stages, parameters, equivalent circuits, IF-opamp, opamp applications, Bandwidth with feedback, noise, frequency response and compensation
Feedback Amplifiers: Basic concepts of feedback, effects of negative feedback, type of negative feedback connections, stability of feedback amplifiers
Principle of Oscillator: classification, condition per oscillation, RC Oscillators, Wein-Bridge Oscillators, Crystal Oscillators, wave shaping circuits
Power Supplies: Linear mode power supply, switch mode power supply
Design of electronics circuit: Design of rectifier, power supply, design of amplifier, oscillator.

10. Text Book/ Reference Book:
Electronics devices & circuits by S. Salivahanan, N. Sureshkumar & A. Valiavaraj-TMH publications.
Reference Books:
1.  Electronics principles by Malvino-McGraw Hill
2.  Electronics Devices & Circuits by Bell PHI publications.
3.  Electronics Principle by V K Mehta S Chand Publications
4.  Electronics Devices & Circuits by Boylested
E-book:
Science Ebook Basic Electronics Online Ebook with simulations and troubleshooting. a science-ebooks.com publication

11. Course related web links
Hand-outs and  Lecture notes
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 Blog
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 NPTEL Lectures
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Virtual lab
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12. Hobby Projects 1. http://101science.com/Radio.htm
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13. Useful Software 1. Multisim software 2. Circuit design tool
3. Ulti-board
4. Eagle
5. Proteus

14. I am an IT Engineer so Why Should I study this subject?

15. A Cancer Cure Team Khaled Barakat
Economist, Physician, Robotic Engineer
Electrical Engineer
Hu Jintao
Hydraulic Engineer

16. Upcoming Engineering branches and Master courses:
Astronautics Engineering
Aquaculture Engineering
Biomechanical Engineering
Mechatronics Engineering
Biotechnical Engineering
Bioprocessing Engineering
Information and Electrical systems Engineering
Natural resources Engineering
Optomechatronics Engineering
Avionics
IOT Engineering
Rehabilitation Engineering
Neural Engineering
Nanotechnology
Health Technology
Clinical Engineering
Bioinstrumentation Engineering

17. Computer science specialization (AMERICAN HIGHER EDUCATION INFORMATION CENTER)
Artificial Intelligence
Cognitive science
Computer Information systems (CIS)
Computer graphics
Computer Networks
Robotics
Telecommunication Engineering
Quantitative and Computational biology
Applied and computational mathematics

18. Chapter 1: Semiconductor Diodes

19. Chapter Objective
Aware about the general characteristics of 3 important semiconductor materials: Si, Ge, GaAs.
Understand conduction using electron and hole theory
Realize n-type and p-type material
Develop clear understanding of operation and characteristics of a diode in the different biasing conditions
Calculate ac, dc and average ac resistance of a diode from the characteristics
Learning special diodes like Zener diode and LEDs.
Different applications of the diode

20. Semiconductors
Materials that permit flow of electrons are called conductors (e.g., gold, silver, copper, etc.).
Materials that block flow of electrons are called insulators (e.g., rubber, glass, Teflon, mica, etc.).
Materials whose conductivity falls between those of conductors and insulators are called semiconductors.
Semiconductors are “part-time” conductors whose conductivity can be controlled.

22. Semiconductor Material

23. Silicon Atomic density: 5 x 1022 atoms/cm3
Si has four valence electrons. Therefore, it can form covalent bonds with four of its nearest neighbors.
When temperature goes up, electrons can become free to move about the Si lattice.

24. Electronic Properties of Si
 Silicon is a semiconductor material.
Pure Si has a relatively high electrical resistivity at room temperature.
 There are 2 types of mobile charge-carriers in Si:
Conduction electrons are negatively charged;
Holes are positively charged.
 The concentration (#/cm3) of conduction electrons & holes in a semiconductor can be modulated in several ways:
by adding special impurity atoms ( dopants )
by applying an electric field
by changing the temperature
by irradiation

25. Electron-Hole Pair Generation
When a conduction electron is thermally generated, a “hole” is also generated.
A hole is associated with a positive charge, and is free to move about the Si lattice as well.

26. Carrier Concentrations in Intrinsic Si
The “band-gap energy” Eg is the amount of energy needed to remove an electron from a covalent bond.
The concentration of conduction electrons in intrinsic silicon, ni, depends exponentially on Eg and the absolute temperature (T):

27. Doping (N type)
Si can be “doped” with other elements to change its electrical properties.
For example, if Si is doped with phosphorus (P), each P atom can contribute a conduction electron, so that the Si lattice has more electrons than holes, i.e. it becomes “N type”:
Notation:
n = conduction electron
concentration

28. Doping (P type)
If Si is doped with Boron (B), each B atom can contribute a hole, so that the Si lattice has more holes than electrons, i.e. it becomes “P type”:
Notation:
p = hole concentration

29. Summary of Charge Carriers

30. Electron and Hole Concentrations
Under thermal equilibrium conditions, the product of the conduction-electron density and the hole density is ALWAYS equal to the square of ni:
N-type material
P-type material

31. Terminology donor: impurity atom that increases n
acceptor: impurity atom that increases p
N-type material: contains more electrons than holes
P-type material: contains more holes than electrons
majority carrier: the most abundant carrier
minority carrier: the least abundant carrier
intrinsic semiconductor: n = p = ni
extrinsic semiconductor: doped semiconductor

32. Summary
The band gap energy is the energy required to free an electron from a covalent bond.
Eg for Si at 300K = 1.12eV
In a pure Si crystal, conduction electrons and holes are formed in pairs.
Holes can be considered as positively charged mobile particles which exist inside a semiconductor.
Both holes and electrons can conduct current.
Substitutional dopants in Si:
Group-V elements (donors) contribute conduction electrons
Group-III elements (acceptors) contribute holes
Very low ionization energies (<50 meV)