1. POSITION OF MRG IN EUROPEAN MICROELECTRONICS
European or international funded projects
GaAs Microwaves
ESPRIT 1270 ( )
ESPRIT 2035 ( )
ESPRIT 3086 ( )
ESPRIT 5031 ( )
ESRPIT 5018 ( )
ESPRIT 9500, No. 19 ( )
ESPRIT ( )
COPERNICUS CIPA-CT ( )
INCO “MEMSWAVE” ( )
NATO SfP ( )
NATO SfP ( )
GaAs Optoelectronics
RACE 1027 ( )
ESPRIT 2289 ( )
ESPRIT ( )
HCM CHRXCT ( )
IST FET-ASSESS ( )
SiC
BRITE/EURAM 5416 ( )
INTAS ( )
NATO SfP ( )
NATO SfP ( )
GaN

2. Ongoing research activities
GaAs: Tunable laser diodes by Stark effect
MMICs and RF-MEMS
Quantum Dots
SiC: SiC-based microwave devices and SiC nanostructures
GaN: GaN HEMTs
Quaternary nitrides for better blue LDs

3. N Contact: Ni/Au/Ge/Ni/Au
Tunable laser diode by Stark effect
In this work, the active region of the laser diode is designed such that the injection current
generates a space-charge field which tunes the lasing wavelength. For the time being, we have
demonstrated Stark shifts of the lasing wavelength of about 5nm in a InGaAs/AlGaAs diode.
In/Sn
Active area
250µm
N Contact: Ni/Au/Ge/Ni/Au
Ceramic
2.5µm
75µm N p
P Contact :Pt/Ti/Pt/Au
N doped GaAs Substrate
3 nm

4. First Cretan Quantum Islands
Single layer of InAs islands,
self-assembled on GaAs (100)
substrates, fabricated by
molecular beam epitaxy.

5. Highlights of SiC-related activities.
Study of heteroepitaxy and nanostructure
formation in the 3C-SiC/Si material system.
2x2 mm
Rows of 3C-SiC islands parallel to steps
Develop microwave SiC-based devices
0.5x0.5mm
3cm
Demonstration of first SiC-based IMPATT diode (0.3W at X-band)