1. GaN HEMT with SiN/SiO2/SiN gate dielectric
Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors Robert Davis, North Carolina State University Contract: ONR MURI N
MURI, year started: 1998
March 2002
Objectives:
Develop theory and measure carrier dynamics
Low dislocation density films
Wafer bonding
Fabricate power switches and high-frequency power devices in III-Nitrides
DoD Capabilities Enhanced
Microwave switches – transmit/receive modules
X-band microwave power devices – phased array radar
Low noise amplifiers and wireless base stations
High voltage switches
Negligible dispersion. No hysteresis is observed in the high bias I-V curve.
GaN HEMT with SiN/SiO2/SiN gate dielectric
Approaches:
Monte Carlo simulation and measurement of hot/ballistic transport in AlN and GaN
X-ray mapping SiC substrate
High and low defect density GaN
Wafer bonding
HFETs with nitride gate dielectrics
Vertical transistors
Novel HFETs
Ohmic contacts/p-GaN, piezoelectric coefficients/GaN
Accomplishments:
Simulated/measured hot electron transport in AlN
Developed low dislocation density GaN films
Determined film microstructure/property relations
Determined band offset GaN/SiO2 interface
Fabricated high-voltage HEMTs, vertical transistors
Fabricated and tested novel AlGaInN/InGaN HFETs