1. EKT104 ANALOG ELECTRONIC CIRCUITS [LITAR ELEKTRONIK ANALOG]
DR NIK ADILAH HANIN BINTI ZAHRI

2. INTRODUCTION Course Outcomes Course Delivery Course Assessment
Lecturers
Book References
Review of BJT

3. COURSE OUTCOMES
CO1 : Ability to ANALYZE dc , small-signal analysis and frequency performance of basic configurations of amplifier (BJT and FET).
CO2 : Ability to DESIGN basic configurations of BJT and FET amplifiers.
CO3 : Ability to ANALYZE and PERFORM simple design of classes A, B and AB of BJT and FET power amplifiers in term of their frequency response, equivalent circuit, thermal management and gain.
CO4 : Ability to DESCRIBE the principles operation of some special electronic devices such as Triac, UJT, SCR and ANALYZE their application circuits.

4. COURSE DELIVERY
Number of Units : 4 Lecture : 3 hours/week x 14 weeks = 42 hours Lab/Tutorial: 2 hours per week x 14 weeks = 28 hours

5. COURSE ASSESSMENT Final Examination 50% Mid Term Test 1 10%
Lab Assessment 20%
Lab test 10%

6. LECTURERS DR NIK ADILAH HANIN BT ZAHRI adilahhanin@unimap.edu.my
DR ONG BI LYNN
DR AMIZA AMIR

7. BOOK REFERENCES Textbook:
Donald A. Neamen, ‘MICROELECTRONICS Circuit Analysis & Design’,3rd Edition’, McGraw Hill International Edition, 2007
Reference Books:
Boylestad, R.L. , Nashelsky, L., “Electronic Devices and Circuit Theory”, 8th Edition, Prentice Hall, 2002.
Thomas L. Floyd, ‘Electronic devices: Conventional Current Version’, 7th ed.’, Prentice Hall
Gates, E.D. , “Introduction to Electronics”, 5th Edition, Delmar Cengage Learning.

8. INTRODUCTION TO BJT AMPLIFIER
Bipolar Junction Transistor (Review)

9. FUNDAMENTALS OF ELECTRICITY
Current?
Voltage?
Resistance?
Power?

10. FUNDAMENTALS OF ELECTRICITY
Current?
The flow/movement of electrons from negatively charged atoms to positively charged atoms.
Voltage?
The force or difference of potential that causes electrons to move/flow in a circuit
Resistance?
The opposition to the flow of the current
Power?
Rate of energy dissipated in a circuit

11. CONDUCTORS, INSULATORS & SEMICONDUCTORS
Materials that contains a large number of free electrons
Insulators
Materials that prevent the flow of electricity
Semiconductors
Material that have electrical conductivity between a conductor and insulators.

12. N-TYPE & P-TYPE SEMICONDUCTORS
to increase the no. of conduction-band electrons in intrinsic silicon (such as As, P, Sb)
majority carrier: electrons
p-type:
to increase the no. of holes in intrinsic silicon (such as B, In, Ga)
majority carrier: holes
As Arsenic
P Phosphorus
Sb Antimony
B Boron
In Indium
Ga Gallium

13. WHAT IS PN JUNCTION? still remember this?
What’s the different between these two figures? Which one is forward-biased and reverse-biased?
Cathode supplies and anode collects the electron

14. BIPOLAR JUNCTION TRANSISTOR
Three-layer device used to amplify and switch power and voltage
Constructed from semiconductors materials such as silicon and germanium
2 types: NPN & PNP

15. Remember these symbols?
Still remember about BJT?
Which one is NPN, PNP?
What is C,B,E…?

16. BJT CURRENT
The emitter current ( iE ) is the sum of the collector current (iC) and the base current (iB)
iB << iE and iC

17. BJT Basic structure and schematic symbol pnp type npn type approximate
equivalents
transistor
symbols
pnp type
npn type

18. REFRESH… Common-emitter current gain, β Common-base current gain, α
Range: 50 < β < 300
Common-base current gain, α
Range: always slightly less than 1
The current relationship between these 2 parameters are as follows:
Where Beta = Ic/Ib
Alpha = Ic/Ie

19. REFRESH… BJT as amplifying device B-E junction is forward-biased
B-C junction is reverse-biased

20. BIASING OF BJT Remember…! for normal operation
emitter-base junction is always forward- biased
AND
collector-base junction is always reverse- biased

21. CIRCUIT CONFIGURATION
Common-base circuit
Input enters emitter-base circuit and output leaves from collector-base circuit
Common-emitter circuit
Input enters base-emitter circuit and output leaves from collector-emitter circuit
Common collector circuit
Input enters base-collector circuit and output leaves from emitter-collector circuit

22. DC ANALYSIS: COMMON-EMITTER CIRCUIT
Transistor current-voltage characteristics of the common-emitter circuit
The collector current is plotted against collector emitter voltage.

23. DC ANALYSIS: COMMON-EMITTER CIRCUIT
Common-emitter circuit with an npn transistor
Common-emitter dc equivalent circuit, with piecewise linear parameters

24. DC ANALYSIS: COMMON-EMITTER CIRCUIT
Usually VBE(on) = 0.7 V
Common-emitter dc equivalent circuit
Look for calculation examples in Neamen (Chapter 5), Example 5.3 & 5.4

25. DC ANALYSIS: LOAD LINE & MODES OF OPERATION
Figure A
Base-emitter junction characteristics and the input load line
Base on Figure A, using KVL around B-E loop:

26. DC ANALYSIS: COMMON-EMITTER CIRCUIT
Base on Figure A, 2 end points of the load line are found by setting IC = 0
So, VCE = VCC = 10 V
When VCE = 0,
IC = VCC/RC = 5 mA
IBQ is the value from the previous slide = 15 µA
So, ICQ = βIBQ
If β = 200,
ICQ = 3000 µA = 3 mA
So, VCEQ = 4 V
Common- emitter transistor characteristics and the collector-emitter load line

27. BJT AS AN AMPLIFIER
Amplification of a small ac voltage by placing the ac signal source in the base circuit
Vin is superimposed on the DC bias voltage VBB by connecting them in series with base resistor RB:
Small changes in the base current circuit causes large changes in collector current circuit
Fig 4-20a & b (stacked)

28. BJT AS AN AMPLIFIER (CONT’)
(a) A bipolar inverter circuit to be used as a time-varying amplifier
(b) The voltage transfer characteristic

29. SELF- READING
Textbook: Donald A. Neamen, ‘MICROELECTRONICS Circuit Analysis & Design’,3rd Edition’, McGraw Hill International Edition, 2007
Chapter 5:The Bipolar Junction Transistor
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