1. PRESS RELEASE
Mid-Voltage Power MOSFETs in PQFN Package Utilizing Copper Clip Technology
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The new power MOSFETs featuring IR’s latest silicon technology are designed for switching applications including DC to DC converters for network and telecom equipment, AC-DC SMPS, and motor drive switches. Available in a wide range of voltages from 40 V to 250 V, the devices provide various levels of on-state resistance and gate charge to offer customers optimized performance and cost for a given application.
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Features
Low thermal resistance to PCB (down to <0.5 C/W) results in increased power density
100% RG tested results in increased reliability
Low profile (<0.9 mm) results in increased power density
Industry-standard pinout results in multi-vendor compatibility
Compatible with existing surface mount techniques results in easier manufacturing
RoHS compliant makes these devices environmentally friendly
MSL1 industrial qualification results in increased reliability
Advantages
With a low 0.9 mm profile and industry standard pin out, the devices’ high current rating and low RDS(on) enable higher efficiency, power density and reliability compared to alternative solutions requiring multiple parallel parts, making them well suited to switching applications where board space is limited.
Copper clip lowers the package resistance by around 1mOhm. This feature is especially important because new silicon technologies reach sub 1mOhm performance. Reducing the package resistance reduces the overall product resistance.
The copper clip allows industrial qualification to be granted because the die is soldered on the lead frame.
The copper clip allows the package to handle more current allowing the die to be the limiting factor instead of the package.
June 2010