1. H.-G. Moser Max-Planck-Institut für Physik MPI Semiconductor Laboratory (Halbleiterlabor: HLL) Common project of the: Max-Planck-Institut fuer Physik (Werner Heisenberg Institut), Munich Max-Planck-Institut fuer extraterrestrische Physik, Garching Founded in 1992, since 2000 located in the Siemens plant in Neu-Perlach, Munich 1

2. H.-G. Moser Max-Planck-Institut für Physik HLL Facilities 800m² cleanroom Class 1 6 production line Thermal oxidation Photolithography (double sided, mask and laser writer) Wet chemical ething Ion implantation LTO Nitride Polysilicon Al-sputtering

3. H.-G. Moser Max-Planck-Institut für Physik 3 Sensor Thinning ? Process backside e.g. structured implant Wafer bonding SOI process Thinning of top wafer (CMP) Processing etching of handle wafer (structured) diodes and large mechanical samples Belle II module Need thin (50µm-75µm) self supporting all silicon module

4. H.-G. Moser Max-Planck-Institut für Physik 4 MPI 3D R&D Program Build demonstrator using ATLAS pixel chip (FE-I2/3) and thin pixel sensors made by MPI (complete wafers with FEI2, FEI3 chips available!) Interconnection with SLID and ICV technology by Fraunhofer IZM Demonstration of postprocessing of standard ASICs with via last More by Anna Macchiolo test sensors (strip, pixel) on 75mm and 150µm SOI wafer

5. H.-G. Moser Max-Planck-Institut für Physik 5 Sensors In house production on FZ-SOI material (2 k cm) Detector wafer thickness 75 µm and 150 µm p- and n-type material p-spray insulation U dep 20V and 80V (before irradiation) ~ 100% CCE at 10 16 n/cm² 75 µm

6. H.-G. Moser Max-Planck-Institut für Physik Bump Bonding Preparation 6 Preparation for bump bonding: UBM (under bump metal) Flex DCD/DHP Switcher

7. H.-G. Moser Max-Planck-Institut für Physik 1 st Cu/Sn Wafer at the HLL 7 Belle II TDR review November 2010

8. H.-G. Moser Max-Planck-Institut für Physik Summary The MPI semiconductor laboratory offers worldwide unique possiblities to develop and produce novel types of silicon detectors Complementary to industrial production: High purity material (full depletion) Double sided processing Large area devices (wafer size) For AIDA: thin pixel sensors with UBM (copper on Ti/W) 8