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Fig. 14 from Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel (Image 1 of 3) Eunseon Yu and.

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Presentation on theme: "Fig. 14 from Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel (Image 1 of 3) Eunseon Yu and."— Presentation transcript:

1 Fig. 14 from Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel (Image 1 of 3) Eunseon Yu and Seongjae Cho 2016 Jpn. J. Appl. Phys doi: /JJAP

2 Fig. 14 from Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel (Image 2 of 3) Eunseon Yu and Seongjae Cho 2016 Jpn. J. Appl. Phys doi: /JJAP

3 Fig. 14 from Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel (Image 3 of 3) Eunseon Yu and Seongjae Cho 2016 Jpn. J. Appl. Phys doi: /JJAP

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