1. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
Diagram of SE formation where the lightly doped regions received a chemical etching step (group 1). To form the SE structure with group 2 process, an exchange of step 6 and step 7 was proceeded.

2. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
(a) Optical micrograph of solar cell with silver contact on top of the trench and (b) morphology of front side cell by scanning electron microscopy measurement

3. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
The variation of sheet resistance by different solutions of 10 mL HF, 1 L HNO3, and 2.2 L H2O etched before annealed (group 1) and 10 mL HF, 1 L HNO3, and 1.5 L H2O etched after annealed process (group 2)

4. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
Effective carrier lifetime versus excess carrier density for two groups of samples were etched before and after annealing process, respectively. Each group contains two values of sheet resistance Ω/□ and Ω/□.

5. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
Auger-corrected inverse effective lifetime versus excess carrier density for the samples of nonetched and etched before and after annealed process with sheet resistance of Ω/□ and Ω/□, respectively

6. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
SIMS profile of implant wafers at a dose of 5 × 1015 cm−2 with (solid line) and without etching treatment (dashed line) followed by the annealing process

7. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
Effective carrier lifetime of blanket emitter as heavily doped and SE as lightly doped by chemical etching

8. Date of download: 10/26/2017
Copyright © ASME. All rights reserved.
From: A Novel Solar Cell Shallow Emitter Formation Process by Ion-Implantation and Dopant Modulation Through Surface Chemical Etching
J. Sol. Energy Eng. 2017;139(6): doi: /
Figure Legend:
(a) EQE and (b) reflectance measurements as a function of blanket emitter and SE with two types of etching methods