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Alternative process flows for reduction of steps
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Solution 1 Metalization steps Passivation steps
To do at Leti (3 litho) To do at CMi Alignment marks Lithography for phosphorus ion implantation (Front side) Phosphorus ion implantation (Front side) Lithography for boron ion implantation (Front side) Boron ion implantation(Front side) Boron ion implantation(Back side) SiO2-SiO2 temporary bonding Thinning Low temperature bonding Cutting of 8 inches wafers in 4 inches shapes Metalization steps Passivation steps
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Solution 2 Metalization steps Passivation steps
To do at Leti (2 litho) To do at CMi Alignment marks Lithography for phosphorus ion implantation (Front side) Phosphorus ion implantation (Front side) Boron ion implantation(Back side) SiO2-SiO2 temporary bonding Thinning Low temperature bonding Cutting of 8 inches wafers in 4 inches shapes Metalization steps Passivation steps
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Solution 3 SiO2-SiO2 temporary bonding Thinning
To do at Leti (0 litho, work on 4 inches?) To do at CMi SiO2-SiO2 temporary bonding Thinning Low temperature bonding Alignment marks Lithography for phosphorus ion implantation (Front side) Phosphorus ion implantation (Front side) Lithography for boron ion implantation (Front side) Boron ion implantation(Front side) Boron ion implantation(Back side) Metalization steps Passivation steps
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