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Electro-optics with Scotch Tape: A new Generation of Devices

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Presentation on theme: "Electro-optics with Scotch Tape: A new Generation of Devices"— Presentation transcript:

1 Electro-optics with Scotch Tape: A new Generation of Devices
Mishkenot Shaananim, 8/1/2016 I am grateful for the opportunity to present my research program. My name is Hadar Steinberg, and I am a new faculty member at the Hebrew University in Jerusalem. Hadar Steinberg

2 Once upon a time Achieving Lower Dimensions
Image: doitpoms.ac.uk

3 The first graphene revolution The Isolation of Graphene
I remember, when first seeing graphene talk by Kim in 2005, that the fabrication procedure look too undeterministic. Show how to build the device..? Lots of excitement: Graphene is an excellent conductor Truly 2-dimensional Zhang et al., Nature 438, 201 (2005)

4 The Scotch Tape Method From Material to Device
1. Need picture of graphite flake

5 The 2nd Graphene Revolution Putting graphene on to Other Surfaces
hBN hBN: Insulating isomorph of graphite B, N atoms occupy A, B sites. Young, Dean graphene on hBN hBN substrates are ultra-flat, and are free of dangling bonds. Order-of-magnitude improvement in quality of substrate-supported graphene. Graphene on hBN: Dean et al, Nature Nanotechnology 5,722 (2010)

6 Very generic technique! Works for many more materials
Graphene on Bi2Se3: Tunnel Junction Graphene Bilayer Graphene Graphene Hexagonal Boron Nitride TMD TI MoS2 hBN

7 Is it useful? Circuit Integration
1. Need picture of graphite flake How do we move from single device to circuit? Why bother – Silicon technology is great…

8 Atomically Thin Electronics The Thinnest PN Junction
Gate-tunable diode current Gate-tunable photovoltaic response Graphene sandwiching: effective collection of photo-carriers. Lee et al., Kim Group, Nature Nano. 9, 676 (2014)

9 Put the barrier where you need it Tunneling with hBN
Nobel Prizes for Tunneling Device: 1973 (Esaki, Giaever) STM: 1986 (Rohrer, Binnig) E STM: Vacuum is Barrier DOS Devices: Low T / high B Multiple Electrodes Planar Symmetry Very flat Momentum conservation Electrode Barrier Target

10 Tunneling Device Super-fast component
VSD B 1. Need picture of graphite flake Tunnel device is fast: Very short distance traversed

11 Understanding Tunneling The Quantum Shortcut
VSD B Wait for landing? 1. Need picture of graphite flake

12 Atomically Thin Materials Ultra-thin Superconductors
Graphene protects BSCCO Single Unit Cell: Tc = 88K Tsen et al., Nature Phys. AOP (2015) Both systems encapsulated in a globe box Monolayer SC can have very low disorder (unlike granular thin films). Tsen paper: NbSe2 has to be glove-box exfoliated, otherwise there is no SC. Graphene / Graphite is used as a contact, all the device is encapsulated in hBN. NbSe2 Bilayer, Tc = 5.26K Jiang et al., Nature Comm. 5, 1(2014)

13 Other Opportunities? Positron Trap
(b) Graphene Electrode BG TG Top Dielectric From Beam Metal Dielectric Dielectric Metal Bottom Dielectric Positron (c) VBottom (d) VTop Coated by graphene or hbn?? Energy position


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