1. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Schematic illustration of 1D moisture diffusion

2. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Schematic illustration of moisture concentration at a bimaterial interface

3. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Weight gain histories of: (a) EMC A and (b) EMC B, obtained at three temperatures and the humidity environment of 75%RH. Bullets and solid lines indicate the measurement data and corresponding Fickian curves, respectively.

4. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Diffusivity versus temperature

5. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Solubility versus temperature

6. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Solubility versus temperature obtained from four different packaging materials

7. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Fickian and non-Fickian solutions are compared with experimental data of EMC A obtained at 180 °C

8. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Overview of CHS measurement procedure using moiré interferometry

9. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Moiré fringe patterns: (a) null fields obtained from the reference sample; fringe patterns of the test sample at time intervals of (b) zero and (c) 40 h

10. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Hygroscopic strain versus moisture content (%) obtained from moiré fringes

11. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Saturated concentration of various packaging polymers versus relative humidity

12. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Implementation of normalized analogy: (a) bimaterial specimen subjected to an isothermal loading condition and (b) distribution of moisture concentration at t = 3600 s

13. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
(a) Schematic diagram of simulated geometry and boundary condition for the anisothermal bimaterial case and (b) moisture concentrations at t = 3600 s

14. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Schematic illustration of: (a) cross section of MEMS devices; and (b) “original” model and (c) effective volume model in a simplified 1D configuration [65]

15. Date of download: 10/28/2017
Copyright © ASME. All rights reserved.
From: Moisture Ingress, Behavior, and Prediction Inside Semiconductor Packaging: A Review
J. Electron. Packag. 2017;139(1): doi: /
Figure Legend:
Normalized pressure inside cavity as a junction of normalized time