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N-TYPE AND P-TYPE SEMICONDUCTORS
GROUP MEMBERS = MUHAMMAD MUJIRIL AKROMIN BIN HAMZAH D MUHAMMAD NURFARHAN BIN RAZAK D 3) MUHAMMAD AZIZI BIN MOHD SABRI D LIM YI ZHOU D011610 NIK MOHAMAD NASRI BIN NIK SIN D NUR HAFIZAH BINTI ALI D G R O U P 3
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N-type and P-type Semiconductors
As the intrinsic state of semiconductor must be modified to increase its conductivity and make it useful in electronic devices, by adding impurities. This gives two types of extrinsic(impure) semiconductive materials, n-type and p-type. The process of creating N and P type materials is called doping. This process will improve the electrical characteristics of Si and Ge.
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DIFFERENCES BETWEEN INTRINSIC STATE VS EXTRINSIC STATE
PURE SEMICONDUCTOR HAVE LIMITED NUMBER OF FREE ELECTRON IN THE CONDUCTION BAND AND HOLE IN THE VALENCE BAND UNSTABLE TO CONDUCT HAVE DOPING WITH IMPURITIES THE MODIFICATION OF INTRINSIC MATERIAL BY INCREASING THE NUMBER OF FREE ELECTRONS/HOLES. INCREASING ITS CONDUCTIVITIES
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N-TYPE SEMICONDUCTOR Pentavalent impurity (phosphorus (P), arsenic (As), or antimony (Sb) ) atom is added to increase the number of conduction band electrons in intrinsic silicon. Each pentavalent forms covalent bonds with four adjacent silicon atoms when a pentavalent (five valence electron) impurity are added. This will leave one extra electron without bonds and will become a conduction electron because it is not attached to any atom. Because the pentavalent electron gives up an electron, it is called a donor atom.
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This doping process , silicon or germanium doped with pentavalent atom will give n-type semiconductor because most of current carriers are electrons which are called the majority carriers and a few holed that are created in n-type materials are called minority carriers. Pentavalent impurity atom: Arsenic (As), phosphorus (P), Bismuth (Bi) and antimony (Sb)
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P-Type semiconductor Is a type of semiconductor .
To increase the number of holes in intrinsic silicon , trivalent atoms (has 3 valence electrons)are added . Each trivalent electron forms covalent bonds with 4 adjacent silicon atoms. Result 1 hole since 4 electron required and all 3 of electron in boron atom are used in covalent bonds . This is because the trivalent atom can take an electron ,and it called as acceptor atom.
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P-type semiconductor ( Si )Silicon or Germanium ( Ge ) doped with trivalent atom will give p-type semiconductor because most of current carriers are holes which are called (majority carriers ). The process is called doping . A few electrons that are created in n-type materials are called minority carriers.
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THE END . . .
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