1. Results and Discussion
354nm ; 0.131A/W
357nm ; 0.129A/W
356nm ; 0,13 A/W
Spectral responsivities of nitride-based p-i-n bandpass photodetectors
at room temperature.

2. η：quantum efficiency（量子效率）
R：measured responsivity（響應）
q ：electron charge（基本電荷1.62×10-19）
λ：incident light wavelength（入射光波長）
h ：Planck constant（普郎克常數6.62 ×10-32）
c ：speed of light（光速率2.99 ×1010 ）

4. by：
Sample A
0.131= η × （ 1.6 × × 354 × 10-9）／（6.626 × × 2.99 ×108）
η = 0.46 × 100％≒46 ％
Sample B
0.129= η × （ 1.6 × × 357 × 10-9）／（6.626 × × 2.99 ×108）
η = 0.45 × 100％≒45 ％
Sample C
0.13= η × （ 1.6 × × 356× 10-9）／（6.626 × × 2.99 ×108）

5. Current–voltage characteristics of the nitride-based p-i-n bandpass
photodetectors at room temperature with fitting curve. R = (dV=dI) at zero bias.

6. Conclusion
Nitride-based p-i-n bandpass photodetectors with 60-, 150,and 300-nm-thick blocking p-AlGaN layers were successfully fabricated and characterized. The peak responsivities wereestimated to be 0.131, 0.129, and 0.13 A/W at 354, 357,and 356 nm for 60-, 150-, and 300-nm-thick p-Al Ga N blocking layer, respectively, corresponding to a quantum efficiency of around 46%.