1. Layer-by-Layer Self Assembly of CIGS-Polymer Thin Films for Solar Cell Applications
Robert Vittoe1, Yici Jing2, Sejal Vagal3, and Mark Canner4
(Sudhir Shrestha2, Mangilal Agarwal2, Namratha Kakumanu2
and Kody Varahramyan2)
Integrated Nanosystems Development Institute (INDI)
Indiana University–Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202
1Department of Physics, Purdue School of Science, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202
2Department of Electrical and Computer Engineering, Purdue School of Engineering and Technology, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202
3Department of Biomedical Engineering Technology, Purdue School of Engineering and Technology, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202
4Department of Chemistry, Purdue School of Science, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202
Abstract
Methods
Results and Discussion
Flexible thin film solar cells are considered the next generation in solar cell technology. Copper Indium Gallium Selenide (CIGS) solar cells have been highly regarded for cost-competitive energy production.
Quartz Crystal Microbalance (QCM) and Atomic Force Microscopy (AFM) are used to study the film development and surface characteristics, such as thickness, of the different films.
The thickness of the P3HT and CIGS layers after 9 layers from the LbL process was µm and µm for P3HT and PEI.
The thickness after 3 layers of the LBL process using the P3HT and CIGS was µm and µm for P3HT and PEI.
The time constant from the time vs. current plot was calculated to be approximately 81.3 seconds.
Test results of solar cell has shown desirable current changes responding to dark/light condition. MOSFET with CIGS nanoparticles using “up-side down” fabrication has proven decent IV characteristics of FET family.
Fabrication and Analysis was performed using:
CIGS nanoparticles were synthesized via heating us process through the use of metal (I) chlorides and selenium powder.
Layer by Layer Dip Coater, through electrostatic attraction, was used to apply the layers.
Light and Dark device fabricated through drop casting CIGS.
Atomic Force Microscopy (AFM) was used to image the surface of the films.
Keithley 4200 Semiconductor Characterization device and Micromanipulator Probing Station were used to determine the resistance and I/V characteristics of the films and devices.
Introduction
Layer by layer is used to create films by applying alternating layers of opposite charged materials.
The LbL technique can be used to deposit different types of materials on various substrates with good control of the thickness of the materials deposited on the substrate at nanometer-scale precision(1)
Copper Indium Gallium Selenide (CIGS) with polymer films provide improved results.
Time vs. current plot of CIGS based solar cell
CIGS based
solar cell
MOSFET with CIGS
nanoparticles
Layer-by-Layer Self-Assembly Process
MOSFET drain current vs. drain-to-source
Voltage for -2, -1 and 0V
Review of Literature
Micromanipulator Probing Station
Light and Dark simulator
Polymer based OPV cells offer the potential to play a significant role as a zero-emission source of energy during the actual power generation process.(2)
Appropriate nanoscale morphology of thin films of P3HT is required to achieve high charge carrier mobilities, a key factor in enabling efficient OPV device performance .(2)
References and Acknowledgments
AFM images of CIGS from LbL process on hydrophilic slide
Mahlambi, M. M. "Layer-by-Layer Self-Assembled Metal-Ion- (Ag-, Co-, Ni-, and Pd-) Doped Nanoparticles: Synthesis, Characterisation, and Visible Light Degradation of Rhodamine B." Layer-by-Layer Self-Assembled Metal-Ion- (Ag-, Co-, Ni-, and Pd-) Doped Nanoparticles: Synthesis, Characterisation, and Visible Light Degradation of Rhodamine B. Hindawi, 13 Mar Web. 05 June <
Ritesh Tipnis, Darin Laird, Mathew Mathai, “Polymer-based Materials for Printed Electronics: Enabling High Efficiency Solar Power and Lighting” Material Matters 2008, 3.4, 92..
This study was sponsored by the Indiana University‐Purdue University Indianapolis (IUPUI) Multidisciplinary Undergraduate Research Institute (MURI) and supported by Integrated Nanosystems Development Institute (INDI).
Thickness in µm
LbL of alternative layers of P3HT and CIGS