1. Structure and Operation of the MOSFET
14 and 16 March 2016

2. FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA

10. MOS Inversion Layer + -
Metal layer
Oxide layer
P-type
n-type inversion layer
With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer
Threshold voltage VT: applied gate voltage required to achieve the threshold inversion 10 10

19. Voltage-Current Relationship of NMOS (1)19 19