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Micromegas — Properties and Applications — David Attié

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1 Micromegas — Properties and Applications — David Attié
I’m here to present a TPC review GET Workshop – Caen – March 12th, 2009 Astrophysics Detector Workshop – Nice – November 18th, 2008

2 GET Workshop – Caen – March 12th, 2009
Outline Introduction, Micromegas as a MPGD for High Energy Physics Description Technology, meshes Bulk Micromegas Performance Gain measurements, stability and uniformity Energy resolution Sparking probability Micromegas with resitive anode Purposes and history Last results Applications and examples Conclusion GET Workshop – Caen – March 12th, 2009

3 Nuclear Physics/Particle Physics needs
Tracking of charged particles in high energy (NP/PP) and high intensity beam (NP) (ex: 3×107 particles/s from 200 GeV muon beam) High spatial resolution better than 100 μm in (NP: small/PP: large) volume Ageing of the detector limited (NP/PP) Low noise and full efficiency (NP/PP) High rate (NP) Limited incident track scattering (NP/PP) High mean atomic number <Z> to use the gas as a target (NP) Fast readout signal and fast electronics (NP/PP) Low material and low cost (NP/PP) GET Workshop – Caen – March 12th, 2009

4 GET Workshop – Caen – March 12th, 2009
Micromegas (MPGD) Best technology for gaseous detector readout: Micro Pattern Gaseous Detector more robust than wires no E×B effect fast signal & high gain low ion backdrift better ageing properties easier to manufacture Micromegas MICROMEsh GAseous Structure Y. Giomataris et al., NIM A 376 (1996) 29 metallic micromesh (typical pitch 50μm) sustained by μm pillars cathode ~50 µm ~50 kV/cm ~1 kV/cm simplicity single stage of amplification fast and natural ion collection discharges non destructive Giomataris et.al., NIM A376 (1996) 29 F. Saul, NIM A386 (1997) 531 GET Workshop – Caen – March 12th, 2009

5 Micromegas concept The multiplication takes place in high E field (> 20 kV/cm) between the anode (strips, pads) and the mesh in one stage small size ( μm) fast signals (< 1 ns) short recovery time (~150 ns) high rate capabilities (> MHz) high gain (up to 105 or more) A GARFIELD simulation of a Micromegas avalanche (Lanzhou university) micromesh signal strip 1 strip 2 strip 3 GET Workshop – Caen – March 12th, 2009

6 Micromegas technology
Meshes Many different technologies have been developped for making meshes (Back-buymers, CERN, 3M-Purdue, Gantois, Twente…) Exist in many metals: nickel, copper, stainless steel, Al,… also gold, titanium, nanocristalline copper are possible. Deposited by vaporization Electroformed Chemically etched Wowen Laser etching, Plasma etching… Pillars 200 mm Can be on the mesh (chemical etching) or on the anode (PCB technique with a photoimageable coverlay). Diameter 40 to 400 μm GET Workshop – Caen – March 12th, 2009

7 Bulk Micromegas technology
Result of a CERN-Saclay collaboration (2004) Process to encapsulate the mesh on a PCB (mesh = stretched wires) Motivations for using bulk Micromegas the mesh is held everywhere: no dead space, no frame robustness (closed to dust) can be segmented repairable Copper segmented anode Base Material FR4 Lamination of Vacrel Photo-imageable polyamide film Positioning of Mesh Stainless steel woven mesh Encapsulation Border frame Development Spacer Contact to Mesh I. Giomataris et.al., NIM A560 (2006) 405 INSTR08 – BINP, Novosibirsk – March 1st, 2008

8 GET Workshop – Caen – March 12th, 2009
Performances GET Workshop – Caen – March 12th, 2009

9 Mixtures of gases containing argon: gain curves
iC4H10 CO2, CH4 C2H6 Micromegas Mesh : 50 mm gap of 10x10 cm² size GET Workshop – Caen – March 12th, 2009

10 Gain and efficiency in Ar and Ne
D.Thers et al. NIM A 469 (2001 )133 GET Workshop – Caen – March 12th, 2009

11 GET Workshop – Caen – March 12th, 2009
Gain stability Very good gain stability G. Puill et al. Optimization in progress for CAST GET Workshop – Caen – March 12th, 2009

12 Micromegas gain studies
Three examples of field structure for 75 μm of gap: M. Chefdeville Gain Vgrid (V) 460 500 540 420 103 104 102 103 104 10 20 30 40 60 FWHM (%) Gain Gain dependency with the optical transparency Resolution minimum (13 %) at: G ~ 5.103 No grid geometry dependency GET Workshop – Caen – March 12th, 2009

13 GET Workshop – Caen – March 12th, 2009
Gain uniformity Gain G = ead, where the Townsend coefficient a increases with E field E field decreases with gap d at given voltage V  there is a maximum gain for a given gap (about 50 microns for Ar mixtures) GET Workshop – Caen – March 12th, 2009

14 T2K Micromegas module calibration
Energy resolution of a module: Results for a typical module (35x36 cm²): Good energy resolution: 9% r.m.s. with a 6% dispersion over the module Good gain uniformity: dispersion ~3% Similar gain curve for different Micromegas modules (rms ~ 5%) Gain of several modules Gain uniformity over a module: GET Workshop – Caen – March 12th, 2009

15 T2K module sparking rate
The sparking rate was measured with different Micromegas modules and for different high voltage values The number of sparks measured for one module is ~ 1 per -360 V GET Workshop – Caen – March 12th, 2009

16 Discharge probability in a hadron beam
2.5 mm conversion gap 100 μm amplification gapc 15 GeV hadron beam in spill of 2×108 <Z> ~20 <Z> ~14 Future, pion beam: - remove CF4 - lower the gain - increase the gap to compensate Discharge probability <Z> ~10 In Ne-C2H6-CF4 gain ~ 104 P = 10-6 Note that discharges are not destructive Gain Abbon et al. NIM A 461 (2001) 29 GET Workshop – Caen – March 12th, 2009

17 Radiation hardness No space charge effect in radiation > 30 mC/mm² > 25 LHC years High rate capability with 8 keV x-rays 106/mm2/s G. Puill, et al., IEEE Trans. Nucl. Sci. NS-46 (6) (1999)1894. GET Workshop – Caen – March 12th, 2009

18 Energy resolution vs. gain
Argon/Isobutane mixture Best RMS for a gain between & 6.103 Degradation increase in inverse proportion to the quencher GET Workshop – Caen – March 12th, 2009

19 Bulk: energy resolution
Installation of a 10×10 cm² bulk Micromegas in Aachen (Germany) in Oct made at Saclay Just “plug and play” Resolution: σ ~ 7.5 % r.m.s. Spectrum of 55Fe source fitted by two Gaussians At higher energy (> 1 MeV): σ ~ 2 % GET Workshop – Caen – March 12th, 2009

20 InGrid: energy resolution
Energy resolution depends on the grid geometry Grids can be very flat best energy resolution achieved:  13.6 % with 55Fe source in P10 removal of Kβ 6.5 keV line:  keV in P10 Hole pitch down to 14 μm with various diameters Different gaps (35-75 μm) Until now: grid is 1 μm of Al Escape peak Kα 13.6 % FWHM Escape peak Kβ Gap: 50 μm; Hole picth: 32 μm,Ø: 14 μm 11.7% FWHM Kβ-filtered spectrum with Cr foil GET Workshop – Caen – March 12th, 2009

21 Ion feedback measurements
Measurements with a 45 μm gap InGrids Backflow fraction (BF) down to 1 permil at low picth and high field ratio M. Chefdeville et al. IEEE/NSS 2007 BF = p0/FRp1 Gain ~ 200 σt = 9.5 μm 20 μm pitch p1 = 1.01 32 μm pitch p1 = 0.90 45 μm pitch p1 = 0.96 58 μm pitch p1 = 1.19 GET Workshop – Caen – March 12th, 2009

22 GET Workshop – Caen – March 12th, 2009
Micromegas with resistive anode GET Workshop – Caen – March 12th, 2009

23 GET Workshop – Caen – March 12th, 2009
Purposes Spatial resolution σxy: limited by the pad size (s0 ~ sizepad/√12) because Micromegas charge distribution is narrow (RMSavalanche ~ 15 μm) How to improve the spatial resolution? Decresease the pad size (narrow strips, pixels) Spread the charge over several pads Other advantages: limit the number of channel protect the electronics Disadvantages: need offline computing track separation limited time resolution is affected GET Workshop – Caen – March 12th, 2009

24 Resistive anode TPC COSMo (Carleton-Orsay-Saclay-Montreal) at DESY in 2006 + Micromegas 10 x 10 cm² (gap 50 μm) + resistive anode used to spread charge over 126 pads (7x18) of 2x6 mm² 15 cm drift space 25 µm mylar with Cermet (Al-Si) of 1 MW/□ glued onto the pads with 50 µm thick dry adhesive mesh Resistive foil Glue pads PCB Micromegas TPC COSMo Resistive anode 5 T magnet at DESY + TPC COSMo GET Workshop – Caen – March 12th, 2009

25 Resistive anode Télégraph equation: Simulation Data 2 x 6 mm2 pads
Q(t) (r,t) integrate over pads r (mm) t (ns) M.S.Dixit et.al., NIM A518 (2004) 721 M.S.Dixit and A. Rankin NIM A566 (2006) 281 Simulation Data GET Workshop – Caen – March 12th, 2009

26 Spatial resolution at 0.5 T
B = 0.5 T, resolution fitted by where Resolution 0 ( at z = 0) ~ 50 µm still good at low gain (will minimize ion feedback) Mean of Neff = 27 (value measured before ~ 22)  s0 = 1/40 of pad pitch Gain = 4700 Gain = 2500 Neff=25.2±2.1 Neff=28.8±2.2 GET Workshop – Caen – March 12th, 2009

27 Spatial resolution at 5T vs. gas mixtures
Analysis: - Curved track fit - EP < 2 GeV - |f| < 0.05 (~3°) Extrapolate to B = 4T with T2K gas for 2x6 mm2 pads: DTr = 23.3 µm/cm, Neff ~ 27, 2 m drift distance,  Resolution of Tr  80 m will be possible !!!   ~ 50 µm independent of the drift distance Ar Iso (95:5) B = 5T 50 mm GET Workshop – Caen – March 12th, 2009

28 GET Workshop – Caen – March 12th, 2009
Applications and examples GET Workshop – Caen – March 12th, 2009

29 GET Workshop – Caen – March 12th, 2009
COMPASS 3 stations of 4 planes XYUV Active area 40×40 cm² Strips: pitch 360 μm /420 μm total 30 MHz; 450 kHz/strip 0.2% X0 rad. length/plane Spatial resolution of 65 μm GET Workshop – Caen – March 12th, 2009

30 ILC-TPC Grand Prototype
Built by the collaboration Financed by EUDET Examples : - magnet : KEK, Japon - field cage : DESY, Allemagne - trigger : Saclay, France - endplate : Cornell, USA - Micromegas : Saclay, France - GEM : Saga, Japon - TimePix pixel : F, D, NLc GET Workshop – Caen – March 12th, 2009

31 ILC-TPC Grand Prototypec
Endplate ø = 80 cm of 7 panel of 23 cm with interchangeable module Resistive anode Micromegas module using T2K electronics (1726 pads) 24 row x 72 columns <pad size> ~ 3.2x7 mm2 80 cm GET Workshop – Caen – March 12th, 2009

32 Two Micromegas panels tested at DESY
Two modules successively mounted in 1T magnet and Large Prototype ILC-TPC standard bulk module bulk with resistive anode module (carbon loaded kapton with a resistivity ~ 5-6 MΩ/□) New resistive module with resistive ink (~1-2 MΩ/□) Standard bulk Micromegas module Carbon loaded kapton Micromegas module GET Workshop – Caen – March 12th, 2009

33 GET Workshop – Caen – March 12th, 2009
Beam data in T2K gas GET Workshop – Caen – March 12th, 2009

34 GET Workshop – Caen – March 12th, 2009
Cosmic ray data sample Peaking time: 1 μs Frequency sampling: 100 MHz GET Workshop – Caen – March 12th, 2009

35 GET Workshop – Caen – March 12th, 2009
The T2K TPC Project for a large TPC in the off-axis Near Detector (Tokai) 8 m² sensitive area, 2 m drift 72000 channel A new ASIC (AFTER) from Saclay for the readout To be operational in 2009 The technological choice was mainly driven by project management considerations. However some advantages of Micromegas over GEMs are: Minimised dead space (bulk) 6 times less supplies, feed-throughs, etc… No destruction by discharges GET Workshop – Caen – March 12th, 2009

36 T2K test beam at TRIUMF Starting from September the first T2K TPC, actually equipped with 12 MicroMegas modules, has been installed in a test beam at TRIUMF The beam provides e, μ, π with a momentum up to 400 MeV/c A Time of flight system provides e, μ,π tagging Stable operations for MicroMegas and electronics Low spark rate (1 spark per hour per module at -360 V) 4 Micromegas modules mounted on the TPC 1 event display GET Workshop – Caen – March 12th, 2009

37 Description of the TimePix chip
Chip (CMOS ASIC) upgraded in the EUDET framework from the Medipix chip developed first for medical applications IBM technology 0.25 µm Characteristics: surface: 1.4 x 1.6 cm2 Matrix of 256 x 256 pixel size: 55 x 55 µm2 For each pixel: preamp/shaper threshold discriminator register for configuration TimePix synchronization logic 14-bit counter 55 mm GET Workshop – Caen – March 12th, 2009

38 TimePix/Micromegas chambers
Windows for X-ray sources Saclay Micro-TPC standard Micromegas amorphous-Silicon protection against discharges 6 cm height field cage Cover Windows for β sources Field cage Micromegas mesh Medipix2/TimePix chip INSTR08 – BINP, Novosibirsk – March 1st, 2008

39 TimePix/Micromegas Micro-TPC of Saclay
Timepix chip + SiProt 20 μm + Micromegas 90Sr Ar/Iso (95:5) Time Mode z ~ 40 mm Vmesh = -340 V GET Workshop – Caen – March 12th, 2009

40 Flip-chip electronic for ILC-DHCAL prototype
DIRAC1 readout (to be chanied) 64 channels ASIC (R. Gaglione) Possibility to chain detectors Threshold at 19 fC First chamber with embedded electronics working on beam line! PCB backside DIRAC chip PCB backside Mask for bulk laying ~ events in total PCB topside 8x8 pads with bulk GET Workshop – Caen – March 12th, 2009

41 GET Workshop – Caen – March 12th, 2009
Conclusions Long standing experience with Micromegas has been gathered Lots of new ideas and technological breakthroughs are opening Large area is possible with good performances Single electron efficiency achievable Many records have been broken. - Latest to date: 50 microns space resolution at all distances - Energy resolution: 5% r.m.s. Applications are extending: neutron detection, photo-detection, dark matter search, X-ray polarization measurement… GET Workshop – Caen – March 12th, 2009

42 GET Workshop – Caen – March 12th, 2009
Backup slides GET Workshop – Caen – March 12th, 2009

43 InGrid: Integrated GEM/Micromegas Grid
Integrate a GEM or Micromegas detector directly on a chip … Grid Walls Si wafer + GEM Grid Pillars Si wafer + Micromegas NIKHEF (MESA+, Univ. Twente) GET Workshop – Caen – March 12th, 2009

44 InGrid: Integrated GEM/Micromegas Grid
Integrate a GEM or Micromegas detector directly on a chip … … using wafer post-processing : The substrate could be: naked or patterned wafer of Si readout chip substrate photo-resist Deposit photo-resist & UV exposure define the amplification gap (tens of μm) define the grid support (pillars/walls) Deposit metal & pattern define the grid geometry Develop unexposed photo-resist cleaning 20 μm pitch 50 μm pitch NIKHEF (MESA+, Univ. Twente) GET Workshop – Caen – March 12th, 2009

45 Charge dispersion pulses & pad response function
The Pad Response Function (PRF) is a measure of signal size as a function of track position relative to the pad. The pulse shape is variable and non-standard because of both the rise time & pulse amplitude depend on track position. The PRF amplitude for longer drift distances is lower due to Z dependent normalization. GET Workshop – Caen – March 12th, 2009

46 GET Workshop – Caen – March 12th, 2009
Track fit using the PRF For a given track: xtrack= x0 + tan() yrow Yrow is the y position of the row and x0 &  the track fitting parameters Determination of x0 &  by fitting the PRF to the pad amplitude by minimizing 2 for the entire event Definitions of the different stages: - residual: xrow-xtrack - bias: mean of residual xrow-xtrack = f(xtrack) - resolution: geometric mean of the standard deviations of track residuals 2 mm 6 mm x y x0 f GET Workshop – Caen – March 12th, 2009

47 Pad Response Function (PRF)
0 < z < 1 cm 1 < z < 2 cm 2 < z < 3 cm 3 < z < 4 cm 4 < z < 5 cm normalized amplitude T2K gas B = 5 T 15 z regions / 1 cm step 5 < z < 6 cm 6 < z < 7 cm 7 < z < 8 cm 8 < z < 9 cm 9 < z < 10 cm 10 < z < 11 cm 11 < z < 12 cm 12 < z < 13 cm 13 < z < 14 cm 14 < z < 15 cm 4 pads / ±4 mm xtrack – xpad (mm) GET Workshop – Caen – March 12th, 2009

48 Residuals: xrow-xtrack
0 < z < 1 cm 1 < z < 2 cm 2 < z < 3 cm 12 < z < 13 cm 13 < z < 14 cm 14 < z < 15 cm GET Workshop – Caen – March 12th, 2009


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