1. Date of download: 11/12/2017
Copyright © ASME. All rights reserved.
From: Thermal Conductivity Measurement of Graphene Exfoliated on Silicon Dioxide
J. Heat Transfer. 2010;133(2): doi: /
Figure Legend:
Measured resistance increases ΔRj (for j=1 to 4) of RT1,RT2, RT3, and RT4 as a function of heating current in RT1 when the sample stage temperature was kept at 325 K

2. Date of download: 11/12/2017
Copyright © ASME. All rights reserved.
From: Thermal Conductivity Measurement of Graphene Exfoliated on Silicon Dioxide
J. Heat Transfer. 2010;133(2): doi: /
Figure Legend:
Measured low-biased electrical resistances of RT1 and RT3 in RT1 as a function of the sample stage temperature. Lines are linear fits to the measurement data.

3. Date of download: 11/12/2017
Copyright © ASME. All rights reserved.
From: Thermal Conductivity Measurement of Graphene Exfoliated on Silicon Dioxide
J. Heat Transfer. 2010;133(2): doi: /
Figure Legend:
Measured thermal conductance of the central beam before and after the graphene on top of the central SiO2 beam was etched with the difference found as the thermal conductance of the graphene

4. Date of download: 11/12/2017
Copyright © ASME. All rights reserved.
From: Thermal Conductivity Measurement of Graphene Exfoliated on Silicon Dioxide
J. Heat Transfer. 2010;133(2): doi: /
Figure Legend:
Thermal conductivity of the supported graphene as a function of temperature

5. Date of download: 11/12/2017
Copyright © ASME. All rights reserved.
From: Thermal Conductivity Measurement of Graphene Exfoliated on Silicon Dioxide
J. Heat Transfer. 2010;133(2): doi: /
Figure Legend:
Thermal conductivity of the central SiO2 beam as a function of temperature. The error bars of the measurement results are smaller than the size of the symbols. Shown for comparison is the thermal conductivity for thermally grown SiO2 reported by Cahill .