1. Weekly Report
Renjie Chen

2. Process of Ni-InGaAs Diffusion Study
1st EBL - Markers
2nd EBL – Fin
3rd EBL – Ni Source

3. Test Sample Fin Writing After HSQ removal Ni deposition
Backscattering mode
Backscattering mode

4. Samples in Process Sample 1 – Test Sample
-- finish all 3 EBL steps, and Ni deposition
-- ready for annealing test
Sample 2
-- finish 2nd EBL (Fin) writing
-- will be used for 250’C annealing study
Sample 3
-- finish 2nd EBL (Fin) writing
-- will be used for 300’C annealing study

5. Sample 4
-- finish 1st EBL (marker) writing
-- ready for 275’C annealing study
Sample 5
-- finish 1st EBL (marker) writing
-- will be used for backup or 325’C annealing study

6. Plan Finish processing for the rest four InGaAs samples
-- One last EBL step for sample 2 and sample 3
-- Two EBL steps for sample 4 and sample 5
Carry out the annealing to all the samples
-- The diffusion temperature and time will be determined by the test sample. I’ll update and discuss with you before working on the real samples
-- SEM, AFM characterization