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ENGR 212 / CSCI 310 17 February, 2003 Unless otherwise indicated these slides are taken from John Wakely’s Stanford EE 121, Digital Design Laboratory.

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Presentation on theme: "ENGR 212 / CSCI 310 17 February, 2003 Unless otherwise indicated these slides are taken from John Wakely’s Stanford EE 121, Digital Design Laboratory."— Presentation transcript:

1 ENGR 212 / CSCI February, 2003 Unless otherwise indicated these slides are taken from John Wakely’s Stanford EE 121, Digital Design Laboratory

2 CMOS NAND Gates Use 2n transistors for n-input gate

3 CMOS NAND -- switch model

4 CMOS NAND -- more inputs (3)

5 Inherent inversion. Non-inverting buffer:

6 2-input AND gate:

7 CMOS NOR Gates Like NAND -- 2n transistors for n-input gate

8 NAND vs. NOR For a given silicon area, PMOS transistors are “weaker” than NMOS transistors. NAND NOR Result: NAND gates are preferred in CMOS.

9 Limited # of inputs in one gate
8-input CMOS NAND

10 Fancy stuff CMOS AND-OR-INVERT gate


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