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Lab3: GaAs Process And Devices
Day 1 30um 10um 60um 45um 40um 50um 130um Lab3: GaAs Process And Devices
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Theme Day 1- Background Preparation
Maxwell Equations-Physical Interpretation & Application Interconnects- Design, Mismatch, & Insertion Losses GaAs Process- Pseudomorphic HEMTs, Inductors & MIM Capacitors Process Introduction Day 2- Power Amplifier, MMIC Design Example DC Characterization- Biasing Decoupling, Biasing Techniques, Thermal Stability Small Signal Characterization- Matching & Stability Large Signal Characterization- Single Tone Analysis, Matching across Power Load Pull Day 3- Design Refining, Layout & Design Post Processing Modulated Signal- QAM16 Input, Ptolemy & Circuit Co-simulations Linearity- Two Tone Analysis, IP3, ACPR, & EVM On-chip Power Combiners & Dividers Layout & Tiling
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Direct Vs Indirect Semiconductor
Examples: GaAs, InGaAs, AlGaAs, InP Energy Band Vs Wave Number for Indirect Bandgap Semiconductor Material Energy Band Vs Wave Number for Direct Bandgap Semiconductor Material Examples: Si, SiGe, Ge
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Velocity Overshoot Velocity Overshoot due to Reduced Carrier-Carrier Interaction
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Strained Semiconductor
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Quantum Well at Hetero-junction
P-type N-type Unbiased PN-junction Critically biased PN-junction Quantum Well
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Typical PHEMT Device Structure
GaAs InGaAs AlGaAs Ohmic metal (CO) T-shaped Al Gate Silicon Nitride Passivation TiPtAu (N1 Metal) Silicon Nitride Dielectric Gold Plated Metal (EL)
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UMS PHEMT Device Models in ADS
ADS Setup to Simulate DC Characteristics of PHEMT Device
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Small Signal Characteristics of PHEMT Device
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Process Details for EM Simulations
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Substrate Definition for UMS Dual Metal Process
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On-Chip Spiral Inductors
30um 10um 60um 45um 40um 50um 130um
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SPICE Model for On-Chip Inductors
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On-Chip MIM Capacitor
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SPICE Model for On-Chip Capacitors
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Lab3: GaAs Process And Devices
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