1. Atomistic Modeling of CBRAM Switching Behavior Quantum Transport in Complete Device Geometries
Objectives:
Develop predictive atomistic models for CBRAM.
Provide input & insight to improve device performance.
Results:
End to end device simulations.
Completed
filament
Partial
filament
High
Resistance
Ef1
Ef2
Low Resistance
Predicted current ratio for high/low resistance state ILR/IHR=103 1V
Geometry (3×3nm2 nanowire)
Observed filaments in thin films.
Lu et al. Nature Comm. 3, 732 (2012)
Approaches & Accomplishments:
Tight-binding model developed for Cu/SiO2.
Geometry relaxation & electrochemical processes simulated by molecular dynamics (MD). Structures are imported into NEMO5.
Charge densities are calculated by MD and imported into NEMO5. Electrostatic potential are calculated from charge densities.
Coherent current through relaxed structures calculated by tight-binding.
Non-monotonic character of current evolution is consistent with the ab-initio results