1. GFET model Summary

2. Fig1: Varying separation of parallel plate
Top plate
SiC
Bottom plate
Figure 1: Parallel plate capacitor

3. Fig2: Varying thickness of SiC of GFET
Graphene
SiC
Back gold
Figure 2: GFET with different SiC thickness

4. Fig3: Varying thickness of back gold thickness
Graphene
SiC
Back gold
Gold (50 um)+ SiC (350um)
Graphene
SiC
Figure 3
Back gold
Gold (350 um)+ SiC (50um)

5. Fig4: Varying extra gold position along Z direction
Graphene
SiC
Back gold
SiC
Extra gold
SiC
Z =100 um
Figure 4
Z =1 um
Extra gold
SiC
Note : without extra gold E = 1.87E6

6. Fig5: Varying extra gold position along X direction
Graphene
Graphene
Extra gold
Extra gold
SiC
Back gold
X = 400 um
X = 0 um
Figure 5

7. Fig6: Varying the conductivity of extra SiC
Here, I replace extra gold to SiC and change the conductivity of SiC and recorded E-field.
I change extra gold to SiC because our device actually SiC and it conductivity changes (we believe ) with light
Graphene
Extra SiC
SiC
Back gold

8. Fig7: Effect of Au thickness
E-field for um Au ( here 0.1 or 0.01 um SiC)
(a)
(b)
E-field for 400 um Au (fully gold, no SiC)
Fig.(b): E vs SiC thickness. In this plot means actually 0 um Au. I put stead of 0 um, otherwise I cannot plot in ln scale
Fig.(a): E vs Au thickness
Total thickness of SiC +Au in the GFET is 400 um. Not extra gold in this case. Just simple Au/SiC/graphene.
It is found that E-field increases with increasing (decreasing) the thickness of Au (SiC).
When Au is or um ( here SiC = 10 or 10 nm between gold and graphene), E-field is increases by two order magnitudes.
When Au is 400 um (SiC =0um, that mean fully gold), the electric field sharply decreases by two order magnitude.

9. Fig8: E-field as function of Laser power
Here, SiC conductivity is calculated for different laser power and the SiC conductivity is used as the input in the simulation.

10. P = 1 uW, E = 1.56E6
P = 200 uW, E = 6.58E6
P = 1000 uW, E = 19.91E6
P = uW, E = 96.81E6