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Carbon Nanotube Vias By: Rhesa Nathanael
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Outline What are vias? Why carbon nanotubes for vias?
Fabrication sequence. Characterization results. Issues with current efforts. Summary & Conclusion.
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What Are Vias? ITRS, 2007 Intel, IEDM 2007
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Carbon Nanotubes for Vias
Copper: Resistance ↑ with scaling. Electromigration. Carbon Nanotubes: Ballistic transport. Very large resistance to electromigration. R = h/4e2 = 6.45kΩ Allows current densities > 109 A/cm2
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CNT Damascene Process Via hole formation
TaN/Ta barrier layer TiN contact layer Co catalyst nanoparticles Nanotube growth CVD (C2H2 + Ar at 1kPa, 450ºC) SOG coating CMP nanotubes CMP TiN, TaN/Ta Ti top contact layer Ta barrier layer Cu interconnect
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Characterization Results
Ballistic transport Rc = contact resistance = 0.5kΩ RCNT = nanotube resistance RQ = quantum resistance nCNT = number of shells = 7 λCNT = electron mean free path H = via height h = Planck’s constant e = electron charge CNT density = 3x1011 cm-2 Mean free path = 80nm 32nm Technology Node (2013)
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Issues with Current Efforts
Most fabrication efforts MWCNT. Most characterization efforts electrical properties. CNT via resistance within an order of magnitude of Cu via has been demonstrated. More effort needed on SWCNT & thermal characterization. Local interconnect SWCNT vs. Cu MWCNT
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Thermal & Self-Heating Issues
Thermal contact resistance + Joule heating at metal CNT contact Conclusion: MWCNT thermal properties inferior to Cu & SWCNT
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Summary & Conclusion Carbon nanotube for vias: Damascene process.
Ballistic transport. Electromigration resistance. Damascene process. Mean free path 80nm 32nm technology node. Efforts misplaced? SWCNT vs. MWCNT. More careful thermal characterization of CNT vias needed. Replace Cu? Dense SWCNT bundles. Good electrical and thermal contact.
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References [1] M. Nihei, et al., “Electrical performance of carbon nanotube via interconnects fabricated by novel damascene process,” International Interconnect Technology Conference 2007, pp [2] H. Li, et al., “Carbon nanotube vias: a reality check,” Inernational Electron Devices Meeting 2007 pp [3] B. Q. Wei, et al., “Reliability and current carrying capacity of carbon nanotubes,” App. Phys. Lett., vol. 79, no. 8, pp , 2001
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