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Carbon Nanotube Vias By: Rhesa Nathanael.

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Presentation on theme: "Carbon Nanotube Vias By: Rhesa Nathanael."— Presentation transcript:

1 Carbon Nanotube Vias By: Rhesa Nathanael

2 Outline What are vias? Why carbon nanotubes for vias?
Fabrication sequence. Characterization results. Issues with current efforts. Summary & Conclusion.

3 What Are Vias? ITRS, 2007 Intel, IEDM 2007

4 Carbon Nanotubes for Vias
Copper: Resistance ↑ with scaling. Electromigration. Carbon Nanotubes: Ballistic transport. Very large resistance to electromigration. R = h/4e2 = 6.45kΩ Allows current densities > 109 A/cm2

5 CNT Damascene Process Via hole formation
TaN/Ta barrier layer TiN contact layer Co catalyst nanoparticles Nanotube growth CVD (C2H2 + Ar at 1kPa, 450ºC) SOG coating CMP nanotubes CMP TiN, TaN/Ta Ti top contact layer Ta barrier layer Cu interconnect

6 Characterization Results
Ballistic transport Rc = contact resistance = 0.5kΩ RCNT = nanotube resistance RQ = quantum resistance nCNT = number of shells = 7 λCNT = electron mean free path H = via height h = Planck’s constant e = electron charge CNT density = 3x1011 cm-2 Mean free path = 80nm  32nm Technology Node (2013)

7 Issues with Current Efforts
Most fabrication efforts  MWCNT. Most characterization efforts  electrical properties. CNT via resistance within an order of magnitude of Cu via has been demonstrated. More effort needed on SWCNT & thermal characterization. Local interconnect SWCNT vs. Cu MWCNT

8 Thermal & Self-Heating Issues
Thermal contact resistance + Joule heating at metal CNT contact Conclusion: MWCNT thermal properties inferior to Cu & SWCNT

9 Summary & Conclusion Carbon nanotube for vias: Damascene process.
Ballistic transport. Electromigration resistance. Damascene process. Mean free path 80nm  32nm technology node. Efforts misplaced? SWCNT vs. MWCNT. More careful thermal characterization of CNT vias needed. Replace Cu? Dense SWCNT bundles. Good electrical and thermal contact.

10 References [1] M. Nihei, et al., “Electrical performance of carbon nanotube via interconnects fabricated by novel damascene process,” International Interconnect Technology Conference 2007, pp [2] H. Li, et al., “Carbon nanotube vias: a reality check,” Inernational Electron Devices Meeting 2007 pp [3] B. Q. Wei, et al., “Reliability and current carrying capacity of carbon nanotubes,” App. Phys. Lett., vol. 79, no. 8, pp , 2001


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