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Lecture 15 RTD, Quantum Dots, Hot Electron Structures
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Lateral Design Vertical Design
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Quantum Dot : 0 D
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Condition: U=q2/2C >> kT
C is very very small…..structure is very very small T is very very small….. 4K…300mK…50mK Relationship with 0 D
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Title: Shell filling and spin effects in a few electron quantum dot
Author(s): Tarucha S, Austing DG, Honda T, vanderHage RJ, Kouwenhoven LP Source: PHYSICAL REVIEW LETTERS 77 (17): OCT Document Type: Article Language: English Cited References: 15 Times Cited: 701
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Vertical Quantum Dots Artificial Atoms
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Coulomb Blockade-----Diamond Features
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Hot Electron Structures:
Electron in emitter is several kT higher than in collector (source) (drain) (2) Strong electrical field (oxide damage; reliability issue in Si MOSFET)
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Ballistic Injection Structures:
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Ballistic Transport in HBT
Homework: Read and study “Modern Semiconductor Device Physics” pp
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