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Universidad Complutense de Madrid, Departamento Física Aplicada III, GFMC Rainer Schmidt
Microstructure and dielectric properties of CaCu3Ti4O12 (CCTO) multilayer capacitors Jörg Töpfer 1, Romy Löhnert 1, S. Barth 2, Beate Capraro 2, Heike Bartsch 3, J. Müller 3, Rainer Schmidt 4 1 – University of Applied Sciences Jena, Jena, Germany 2 – Fraunhofer IKTS, Hermsdorf, Germany, 3- Technical University Ilmenau, Germany 4 – Universidad Complutense de Madrid, GFMC, Madrid, Spain 2nd July 2014
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Universidad Complutense de Madrid, Departamento Física Aplicada III
Universidad Complutense de Madrid, Departamento Física Aplicada III Rainer Schmidt Microstructure and dielectric properties of CaCu3Ti4O12 (CCTO) multilayer capacitors - Introduction: Giant dielectric permittivity er in CCTO Defect chemistry in CCTO - Powder processing - Pellet pressing and sintering - Pellet microstructure - Tape casting of laminates - Multilayer fabrication - Dielectric properties
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Crystal structure Giant dielectric permittivity
Introduction: Giant er Rainer Schmidt Crystal structure Giant dielectric permittivity Giant dielectric permittivity er = 105 at high f T-dependent drop to er = 80 at low f Giant er has extrinsic origin!!! Single crystals: Electrode interface effect Polycrystalline ceramics: Grain boundary (GB) effect 1:3 A-site ordered perovskite (A'A''3B4O12) Strong octahedral tilting: a+a+a+ (Glazier) Cu square planar coordination Doubled simple cubic perovskite cell Space group Im-3 Homes et al. Science 293 (2001) p.673 3
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Internal Barrier Layer Capacitor (IBLC) structure
Introduction: Giant er Rainer Schmidt Internal Barrier Layer Capacitor (IBLC) structure Sinclair et al. Appl. Phys. Lett. 80 (2002) p.2153 The T-dependent drop to lower er is fully consistent with an IBLC model as represented by two RC element 4
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Introduction: Giant er Rainer Schmidt
Influence of sintering temperature on the Internal Barrier Layer Capacitor (IBLC) structure Schmidt et al., J.Eur.Ceram.Soc. 87 (2004) p.2072 5
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Internal Barrier Layer Capacitor (IBLC) structure
Introduction: Giant er Rainer Schmidt Internal Barrier Layer Capacitor (IBLC) structure Fang et al., J.Am.Ceram.Soc. 87 (2004) p.2072 M. Li, PhD Thesis (2008) Sheffield Cu-rich phase bulk TEM GB Schmidt et al., J.Eur.Ceram.Soc. 87 (2004) p.2072 Cu-rich phase Grain boundaries and bulk behave very different! SEM: backscattered EDAX line-scan 6
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Defect chemistry in “CaCu3Ti4O12”
Introduction: Defect chemistry Rainer Schmidt Defect chemistry in “CaCu3Ti4O12” (A) Oxygen vacancies + Ti-reduction (B) High temperature Cu-reduction + Cu loss (C) Cu reoxidation upon cooling + internal redox Cu+ +Ti4+ → Cu2+ + Ti3+ (D) Cu-loss and Cu oxidation (E) Cu-excess and oxygen vacancies None of the models has been clealry confirmed experimentally! Li et al. Appl. Phys. Lett. 88 (2006) p Li et al. Solid State Commun. 135 (2005) 60 Fang et al. Acta Materialia 54 (2005) 2867 Schmidt et al. RSC Advances in Press (2013) 7
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Starting powders: CaCO3 (98.0 %, Merck) CuO (99.7 %, Alfa Aesar)
Powder processing Rainer Schmidt Starting powders: CaCO3 (98.0 %, Merck) CuO (99.7 %, Alfa Aesar) TiO2 (99.5 %, rutile, Tronox) Conventional powder processing Homogenization 6 hours X-rays: 8
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Pellet pressing Dilatometry Powder additives:
Pellet pressing Rainer Schmidt Powder additives: 1 wt%, 3 wt%, 5 wt% glass frit: Bi2O3-B2O3-SiO2-ZnO (BBSZ) Planetary ball milling to ≈ 1 mm particle size Pellet pressing Uniaxial pellet pressing Dilatometry 9
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Pellet microstructure
Pellet microstructure Rainer Schmidt Pellet microstructure FE-SEM 2 h 4 h 12 h 1050 °C 1150 °C Cu/Ti intergranular phase near the eutectic point leads to liquid phase sintering 10
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FE-SEM 1050 °C 900 °C 4 h without glass 5 wt.% BBSZ
Pellet microstructure Rainer Schmidt FE-SEM 1050 °C 900 °C 4 h without glass 5 wt.% BBSZ 11
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Cofiring at 900°C with BBSZ additive
Tape casting of laminates and Multilayer fabrication Rainer Schmidt Tape casting of laminates and formation of Multi-Layer Ceramic Capacitors (MLCCs) Cofiring at 900°C with BBSZ additive 12
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Dielectric properties
Dielectric properties Rainer Schmidt Dielectric properties with BBSZ additive 13
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Dielectric properties
Dielectric properties Rainer Schmidt Dielectric properties X7R characteristics between f = 0,1 kHz … 0,2 MHz Losses in the range of 14
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Conclusions Rainer Schmidt
Anomalous grain growth in CCTO is facilitated by a Cu/Ti containing inter-granular phase This anomalous grain growth occurs only above the eutectic point (1000 °C) of this phase CCTO can be formed into tape-casted laminates and Multi-Layer Ceramic Capacitor (MLCC) structures In Low Temperature Co-fired Ceramics (LTCC) (900 °C) the limited grain growth leads to a drop in dielectric permittivity MLCC structures based on glass containing (BBSZ) CCTO sintered at 900 °C under LTCC conditions fullfill the X7R characteristics for ceramic capacitors but have relatively high losses
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Rainer Schmidt Acknowledgments Ramón y Cajal program
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