1. EENP2
Silicon Detectors

2. Task 2.2 Silicon Detector Development
Task 2.2: New high radiation tolerance silicon detectors
POLIBA is leading an R&D campaign in order to identify the baseline silicon technology for future particle physics detectors. Many test structures, of different substrate type and geometry, will be electrically characterized, before and after irradiation with neutron and protons, in terms of capacitance and resistance. Functional measurements with IR laser and beta sources can be performed. Aim is to improve radiation tolerance of detectors by an order of magnitude with respect to the actual technology. The FP7 project forsees that Egyptian researchers take part in this activity at POLIBA contributing to the characterization measurements of the prototypes:
Secondments:
Early-Stage Researcher from Helwan to Poliba, January - August 2015 (8 month)
Early-Stage Researcher from Helwan to Poliba, August April 2015 (9 month)
Deliverables D2.2: Characterization of high radiation tolerant silicon detectors
passive characterization
beam-test measurements of new radiation tolerant silicon detector prototypes in an LHC similar background environment
delivering date: November 2015 (month 35)
There has been a shift towards 2016 of the activities of task 2.2 with respect to the foreseen plan

3. Research Activity: Silicon Detector Development
Poliba researchers, as part of the RD50 CERN project and the CMS experiment, are studying different sensors technologies and materials with the aim to develop sensors able to tolerate HL-LHC radiation effects.
R&D activities on silicon sensors ongoing along 2 main lines:
Planar silicon sensors
Extensive program of measurements of different structures
Combination of
materials (Float-zone, MCZ Epitaxial)
technologies (n-bulk, p-bulk with p-spray and p-stop isolation)
different thicknesses

4. Research Activity: Silicon Detector Development
n or p type bulk
n type column
p column
sensor thickness
3D silicon pixel sensors
3D sensors from SINTEF, FBK and CNM
3D active edge sensors p+ n+ n
300 μm h e p+ n+ n h e
60 μm
3D main properties:
depletion voltage of a few volts
100 V for a planar sensor
reduced charge carrier probability to be trapped by radiation induced defects
radiation hardness
planar sensor
3D sensor

5. 3D sensor prototypes (FBK Trento)

6. Clean room in Bari: equipment
Poliba + INFN clean room for silicon sensor electrical test
(40 m2 class clean room )
clean room overview
probe station for electrical sensor testing
Karl Suss PA200
main equipment:
modular DC source/monitor HB4142B
LCR meter HP4284A
Keithley 590 CV Analyzer
oscilloscope Tektronix TDS3054B
NI Labview for automatic measurements
possibility to make test from -25 0C to +80 0C

7. Summary of the Activity on Silicon Detectors
The Egyptian researchers, both ERs and ESRs, have followed activities in the Clean Room laboratory in Bari.
They have been introduced to the measurement teqniques necessary to perform the electrical characterization of semiconductor devices
They have followed a short-course (hands-on) training on the use of micromanipulators in probe-station for contacting the devices under test
They have learned how to prepare a measurement set-up from the LabView Control Panel and how to execute a measurement on a real test device.

8. Plans for 2017
In view of the CMS pixel TDR, we need to qualify new, small pitch sensors for extreme radiation hardness
Extensive testing of 3D and planar active-edge modules is planned, especially the irradiated ones:
With existing ROCs (FEI$ and PSI46dig), although limited by partial geometrical coverage and chip radiation tolerance
With new generation (65 nm technology) small pitch ROC
Two new batches of sensors (3D and PAE) yet to be produced at FBK, essential to finalize the R&D