1. Electrically active defects in 4H-SiC
Ivana Capan
Ruđer Bošković Institute
Zagreb, Croatia

2. Electrically active defects in 4H-SiC
Outline
Introduction {Radiation induced damage – Deep level transient spectroscopy}
Recent study {Double negatively charged carbon vacancy in 4H-SiC}
Conclusions
20/11/2017
Electrically active defects in 4H-SiC

3. Electrically active defects in 4H-SiC
Defects – electrically active
VO VV VP Ec Ev
0.17
0.23
0.42
0.45
300 C C C
n-type Si
20/11/2017
Electrically active defects in 4H-SiC

4. Electrically active defects in 4H-SiC
20/11/2017
Electrically active defects in 4H-SiC

5. Electrically active defects in 4H-SiC
Laplace DLTS
DLTS
Laplace 170K
20/11/2017
Electrically active defects in 4H-SiC

6. Electrically active defects in 4H-SiC
Z1/2 is carbon vacancy (Vc) – the major “lifetime killer” in SiC
T=292K
(=/-)
(=/-)
DLTS Laplace DLTS
20/11/2017
Electrically active defects in 4H-SiC

7. Electrically active defects in 4H-SiC
Negative-U
T=220K Z2
(-/0) Z1
(-/0)
Z Z2 Z1
E (eV)
 (cm2)
(-/0)
0.52
2E-14
(=/-)
0.58
3E-15 Ec Z2
E (eV)
 (cm2)
(-/0)
0.42
6E-16
(=/-)
0.67
5E-15 Ev
20/11/2017
Electrically active defects in 4H-SiC

8. Electrically active defects in 4H-SiC
Fast neutron irradiation, 1e13 cm keV H, 5e9 cm-2
Low-temperature annealing; 700K
20/11/2017
Electrically active defects in 4H-SiC

9. Electrically active defects in 4H-SiC
E-SiCure project team
University of Aveiro
Portugal
Ruđer Bošković Institute
Croatia
Jozef Stefan Institute
Slovenia
National Institutes for Quantum and Radiological Science and Technology , Japan
Australian Nuclear Science and Technology Organisation, Australia
20/11/2017
Electrically active defects in 4H-SiC