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彰師大積體電路設計所 A 9–50-GHz Gilbert-Cell Down-Conversion Mixer in 0

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Presentation on theme: "彰師大積體電路設計所 A 9–50-GHz Gilbert-Cell Down-Conversion Mixer in 0"— Presentation transcript:

1 指導教授:林志明 級別:碩一 學生:呂致遠 Mail:s94662010@mail.ncue.edu.tw
彰師大積體電路設計所 A 9–50-GHz Gilbert-Cell Down-Conversion Mixer in 0.13-μm CMOS Technology Chin-Shen Lin, Student Member, IEEE, Pei-Si Wu, Student Member, IEEE, Hong-Yeh Chang, Member, IEEE,and Huei Wang, Fellow, IEEE IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 16, NO. 5, MAY 2006 指導教授:林志明 級別:碩一 學生:呂致遠

2 Outline Abstact Introduction Circuit Design Schematic Chip photo
Experimental Results Conclusion References

3 ABSTRACT Broadband microwave/millimeter-wave (MMW) Gilbert-cell mixer
1P8M 0.13-μm CMOS Microstrip line is employed for the matching networks and transformer design RF and LO to IF are better than 40 dB RF-to-LO and LO-to-RF isolations are all better than 20 dB.

4 INTRODUCTION CMOS technology demonstrated for wireless applications in (MMW) frequencies 60GHz LNA, 51GHz VCO SiGe based HBT Gilbert-cell mixer to 30.5GHz CMOS Gilbert-cell mixer below 10GHz A singly balance mixer from 26 to 34 GHz FET mixer from 30 to 40 GHz

5 Circuit Design Use Gilbert-cell core
The charge injection technique is also employed in this circuit. Two resistors are used to inject current into Q1 and Q2 Two common drain buffer stages are added to achieve the impedance matching

6 Schematic Injection technique Gilbert-cell core common drain Buffer
Balun Current Mirror

7 Chip photo IF+ IF- VDD LO GND ON WAFER RF

8 Experimental Results

9 0.13μm for ADS simulation

10 Conclusion A CMOS Gilbert-cell mixer is designed, fabricated, and measured for microwave/MMW applications. To the best of ourknowledge, this is the highest frequency CMOS Gilbert-cell mixer to date. This MMIC mixer exhibits a broadband mixer with conversion gain and is suitable for MMW receiver applications.

11 REFERENCES [1] C. H. Doan, S. Emami, A. M. Niknejad, and R. W. Brodersen, “Design of CMOS for 60 GHz applications,” in IEEE int. Solid-State Circuits Conf. Dig., San Francisco, CA, 2004, pp. 440–538. [2] M. Tiebout, H. D.Wohlmuth, and W. Simburger, “A 1 V 51 GHz fullyintegrated VCO in m CMOS,” in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, 2002, pp. 238–239. [3] R. C. Liu, H. Y. Chang, C. H. Wang, and H. Wang, “A 63-GHz VCO using a standard m CMOS process,” in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, 2004, pp. 446–447. [4] H. Shigematsu, M. Sato, T. Hirose, F. Brewer, and M. Rodwell, “A 40 Gb/s CMOS distributed amplifier for fiber-optic communication systems,” in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, 2004, pp. 476–477. [5] B. S. Tzeng, C. H. Lien, H. Wang, Y. C. Wang, P. C. Chao, and C. H. Chen, “A 1–17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 11, pp. 2564–2568, Nov [6] E. Martins, E. M. Bastida, and J. W. Swart, “Design and performance of Gilbert cell mixer MMIC’s with GaAs PHEMT technology,” in Proc. IEEE Microw. Optoelectron. Conf., Aug. 2001, vol. 1, pp. 245–248.

12 [7] E. Martins, M. V. G. Gomes, E. M. Bastida, and J. W. Swart, “Design
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13 [17] X. Wang, R. Weber, and D. Chen, “A novel 1
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14 Thanks for your listening


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