1. SEMINAR
1. Title : Introduction to Spintronics and III-V-OI MOSFET for Post-Si Technology Node
2. Speaker : Hyung-jun Kim (Center for Spintronics at KIST)
3. Time : 16:00 – 17:00, Thursday, October 12, 2017
4. Place : e+ Lecture Hall (room 83188), 2nd Research Building, Sungkyunkwan University
5. Summary : Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the conventional Si transistor scaling has been fast approaching its physical limits. These limitations have boosted the search for a new concept of device mechanism or alternative active materials of high carrier mobility, allowing a reduction in power consumption without a loss of performance in the application for complementary metal oxide semiconductor (CMOS). One of attempts to circumvent the Si technology limits is based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. In particular, the heterogeneous integration of high-quality III-V layers on the Si is the basic technology to use their physical properties on a Si platform. In this talk, I present two research topics of spintronics and III-V-on-insulator (III-V-OI) MOSFET technology for low power device applications. More specifically, the mechanism of spin transistor and spin-transfer-torque MRAM will be introduced in the first part. As proof-of-concept devices, we demonstrate III-V-OI MOSFET on Si substrates using a direct wafer bonding(DWB) and epitaxial lift-off(ELO) techniques. In the last part, we introduce the concept of monolithic 3D integrated III-V CMOS on Si substrates.
6 Background :
Education
Ph.D. in Materials Science and Engineering (2003), University of California Los Angeles
M. S in Metallurgical Engineering (1997), SungKyunKwan University
B. S in Metallurgical Engineering (1995), SungKyunKwan University
Work
Principal Research Scientist (2005-present), Center for Spintronics at KIST
Professor (2006-present), Division of Nano & Information Technology, KIST School
Post doctoral ( ), Dept. of Electrical Engineering at UCLA
7. Questions : (☏ )
<spin transistor>
<STT-MRAM>
<InGaAs-OI MOSFET>