1. A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique
Microwave and Wireless Components Letters, IEEE Volume 17,  Issue 3,  March 2007 Page
所別 : 積體電路設計研究所
學號 :
學生：賴秀全

2. Outline Abstract Introduction Circuit Design Simulation Results
Conclusion
References

3. Abstract
A 3.1–10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused technique and a simple high-pass input matching network is proposed.
The proposed UWB LNA demonstrates the highest power gain and lowest NF among the published works in m CMOS technology.

4. Introduction
Ultra-wideband (UWB) communication techniques have attracted great interests in both academia and industry in the past few years for applications in short-range and high-speed wireless mobile systems.
This UWB LNA is designed in a fully chip implemented in the 0.18 um CMOS technology with a 1.8-V supply voltage.

5. Fig 1. Cascade LNA.

6. Fig 2. Current – reused LNA

7. Fig 3. Schematic of the proposed current-reused LNA.

8. Fig. 4. Microphotograph of the proposed LNA.

9. Fig. 5. Measured and simulated input reflection coefficients.

10. Fig. 6. Power gain and reverse isolation.
16dB
Fig. 6. Power gain and reverse isolation.

11. 6dB
3dB
Fig. 7. Measured and simulated NFs.

12. TABLE I
PERFORMANCE SUMMARY AND COMPARISON WITH PUBLISHED WORKS

13. Conclusion
Current-reused technique for improving noise performance, achieving good input matching and high power gain.
The proposed LNA provided a peak power gain of 16 dB and a good input matching under a power dissipation of 11.9 mW.

14. References
A. Komijani, A. Natarajan, and A. Hajimiri, “A 24-GHz, +14:5-dBm fully integrated power amplifier in 0.18-m CMOS,” IEEE J. Solid-State Circuits, vol. 40, no. 9, pp. 1901–1908, Sep
K. Han, J. Gil, S.-S. Song, J.-H. Han, H. Shin, C.-K. Kim, and K. Lee, “Complete high-frequency thermal noise modeling of short-channel MOSFET’s and design of 5.2-GHz low noise amplifier,” IEEE J. Solid-
State Circuits, vol. 40, no. 3, pp. 726–735, Mar
M. T. Reiha, J. R. Long, and J. J. Pekarik, “A 1.2 V reactive-feedback 3.1–10.6 GHz ultrawideband low-noise amplifier in 0.13 m CMOS,”In Proc. IEEE RFIC Symp., San Francisco, CA, Jun. 2007, 2006, pp.55–58.
J. Lee and J. D. Cressler, “Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 3, pp. 1262–1268, Mar

15. Q&A
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