1. FLIPPED CLASSROOM ACTIVITY CONSTRUCTOR – USING EXISTING CONTENT Neeraj Kumar Misra Id:

2. About this constructor
This activity constructor document is aimed at assisting teachers in
designing Flipped Classroom Activity in their own course using existing content.
This guide will deal with Open Education Resources (OER’s) or those
licensed under Creative Commons.
The slides with white background are information sheets.
The slides with Pale-yellow background require you to provide inputs.
Replace the text written in BLUE with your input.
This will be followed by an example input.

3. Table of Contents SECTION SLIDE # 07 19 32 ABOUT YOU 04
OUT-OF-CLASS SEGMENT 07
IN-CLASS SEGMENT 19
EVALUATION 32
COMMUNITY BUILDING

4. About you
Neeraj Kumar Misra is Assistant Professor-II of the ECE Department of School of Management Science, Lucknow, India. He has submitted Ph.D. (Full time) degree under TEQIP-II from Institute of Engineering and Technology, Lucknow. His research interests include Reversible logic, QCA, and Fault tolerant architecture. Topic chosen for Flipped classroom is Scaling in MOSFET device.

5. Replace Header with your Name
Scaling in MOSFET device
Reduction in the dimension of the MOSFET
4th Year B.Tech Students in Electronics and Communication Engineering
Very large Scale Integration (VLSI)
Dr. A.P.J Abdul Kalam Technical University, Lucknow

6. Neeraj Kumar Misra EXAMPLE Scaling Parameters Low power VLSI circuits
Electronics Engineering
4th Year B.Tech Students in Electronics and Communication Engineering.
School of Management Science, Lucknow, U.P, India.
EXAMPLE

7. Out-of-class Segment
Practical implementation of MOS Scaling is done by popular Microwind DSCH tool. This is clear the picture of how the real simulation is done by semiconductor industry. Scaling is certainly benefit of reducing size of high density VLSI chips. One of basic example of CMOS inverter is designed in Microwind DSCH tool and after scaling the VLSI primitives results such as area and speed are optimized.

8. About Out-of-Class Segment
Real time simulation is done on that topic.
Practically analyse this concept.
Simulation results to ensure the proper time synchronization between inputs and outputs.
Meant mainly for information-Transmission to student.
Teachers takes time to search and locate videos.
Out-of Class activity should no be too lengthy (Ideally think of 1 lecture being transferred outside).

9. Out-of-class Activity Design -1
Learning Objective(s) of Out-of-Class Activity
At the end of watching the videos student should be able to
Study the scaling types such as constant voltage and constant field.
Modelling equations are derived during study.
Key Concept(s) to be covered
Modelling equations are analyzed after scaling.
Study what the effect of power and power density after scaling.

10. Out-of-class Activity Design-1
Learning Objective(s) of Out-of-Class Activity
At the end of watching the videos student should be able to understand such concept as follows.
Effect of parameters during scaling.
Drain current effect before and after scaling.
Benefit and pitfall of MOSFET scaling.
Key Concept(s) to be covered
Scaling types and difference between these types.
Modelling equations.
EXAMPLE

11. Guidelines for Video Selection - 1
First check in National Repositories
Youtube videos
NPTEL side
Second Look in International Repositories
S.K. Gandhi., “VLSI Fabrication Principles Silicon and Gallium Arsenide”, Wiley India Edition, 2009.
D. A Pucknell and K. Eshraghian., “ Basic VLSI Design System and Circuits”, Second Edition, Prentice-Hall of India Pvt. Ltd., 1989.
S.M. Sze., “ VLSI technology”, Second Edition. Tata Mc Graw-Hill Edition, 2003.
N.H. I. Weste., “Introduction to VLSI Circuits and System”, Wiley India Edition.
DAVID J. FRANK, EDWARD NOWAK, AND HON-SUM PHILIP WONG, Device Scaling Limits of Si MOSFETs and Their Application Dependencies", PROCEEDINGS OF THE IEEE, vol. 89, no. 3, pp , 2001.

12. Guidelines for Video Selection - 1
Third Look in Internet Video Repositories (filter for Creative Commons License)
Youtube (
Vimeo (
Please note that Repository List is not exclusive and there are many more in the web. Please check this link from Edutopia for more information.

13. Guidelines for Video Selection - 2
Keep the length of video short (not more than10 minutes). This is because
it has been found that shorter videos are more engaging.
If the topic is too big for a single 10 min video, split the topic into
multiple videos and give instructions to pause.(E.g. Pause at 4:30 sec)
Select videos that have both text and audio narration. This will help
in assimilation of content easier.

14. Out-of-class Activity Design - 2
Main Video Source URL
License of Video
CC-BY-SA (reuse allowed)
Mapping Concept to Video Source
CONCEPT
VIDEO SEGMENT
DURATION
(in min)
MOSFET Scaling
Scaling types
V1: 0:45-3:43
V2: 0:39-4:12
7:10 M
5:50
TOTAL DURATION
12:60 min

15. Out-of-class Activity Design - 2
Main Video Source URL
License of Video
CC-BY-SA (reuse allowed)
Mapping Concept to Video Source
CONCEPT
VIDEO SEGMENT
DURATION
(in min)
MOFET scaling
V1 - 1:19-7:03
11:31
V2 – 5:20 – 7:35
53.03
V3 – 8:30 – 14:25
3.32
Effect of modeling equations after scaling
V1 – 3:12 – 8:12
4.15
Limitation of MOSFET scaling
V2 – 3:19 – 24:42
8.75
EXAMPLE
TOTAL DURATION
31.6 min

16. Guideline for Designing Assessments
It is recommended to provide few assessment with each video resource.
The assessment has to be at lower cognitive levels (Recall – Apply), aligned to the learning objectives.
It is recommended that you evaluate these assessments before the in-class to understand the level of students.

17. Out-of-class Activity Design - 3
Aligning Assessment with Learning Objective
Learning
Objective
Assessment Strategy
Expected duration
(in min)
Additional Instructions (if any)
MOSFET scaling concept.
Scaling types
Definitions
Constant voltage and constant field scaling
14 M
18 M
Watch video V1
Watch video V2
Expected activity duration
32 m

18. Out-of-class Activity Design - 3
Aligning Assessment with Learning Objective
Learning Objective
Assessment Strategy
Expected Duration
(in min)
Additional Instructions (if any)
Effect of constant voltage scaling on power dissipation and power density.
Effect of constant field scaling on power dissipation and power density.
(Q 1) Prove that after scaling power dissipation P’=SP and power density 𝑆 3 .(P/Area).
(Q 2) Prove that after scaling power dissipation P’=P/ 𝑆 2 and power density P/(Area).
15 minutes
Watch V1 and then answer Q1
Watch V2 and then answer Q2
EXAMPLE

19. Out-of-class Activity Design - 3
Aligning Assessment with Learning Objective
Learning Objective
Assessment Strategy
Expected Duration
(in min)
Additional Instructions (if any)
Prove that in constant field scaling and constant voltage scaling drain current 𝐼′ 𝐷 (sat)= 𝐼 ′ 𝐷 S and 𝐼′ 𝐷 =S 𝐼 𝐷 respectively.
Q1. Using standard drain current equation in linear region and prove scaling effect on drain current.
Q2. Explain limitations on scaling on MOSFET device.
12 minutes
Watch V1 and V3 and then answer Q1 and Q2
EXAMPLE

20. Out-of-class Activity Design - 3
Aligning Assessment with Learning Objective
Learning Objective
Assessment Strategy
Expected Duration
(in min)
Additional Instructions (if any)
Simplify gate oxide capacitance per unit area for constant field scaling.
Simplify gate oxide capacitance per unit area for constant voltage scaling.
Q. What is the effect of factor 𝐶 𝑜𝑥 = Ɛ 𝑜𝑥 / 𝑡 𝑜𝑥 for constant voltage scaling.
Q. What is the effect of factor 𝐶 𝑜𝑥 = Ɛ 𝑜𝑥 / 𝑡 𝑜𝑥 for constant field scaling.
15 minutes
Submit answers to all questions 3 hours before coming to class.
EXAMPLE
Total activity duration
30 minutes

21. In-class Segment
This section helps you design the in-class segment of Flipped Classroom Strategy.

22. About In-Class Segment
Make sure that In-Class segment contain activities for effective learning
In active learning student goes beyond listening, copying of notes.
Execution of prescribed procedures.
Students are required to talk, write, reflect and express their thinking.
Engage students in higher-order thinking (Analyze-Evaluate-Create).
Ensure that students get feedback on their work, either from peers or you.
Ensure to provide summary that connects Out-of-Class and In-Class activities.

23. In-class Activity Design -1
Learning Objective(s) of In - Class Activity
At the end of the class, students will be able to,
Student learn how to major benefit of MOS transistor sizing.
Student learn how the gate delay diminished and a device can perform faster switching activity.
Student learn how the parasitic capacitance diminished and optimize switching activity.
Key Concept(s) to be covered
MOSFET device miniaturization after scaling.
Modelling equations to analyse device performance quality.

24. In-class Activity Design -1
Learning Objective(s) of In-Class Activity
At the end of the class, students will be able to,
What the advancement of microelectronics domain on MOSFET scaling.
Explore MOSFET modelling equations after scaling.
Impact of constant voltage scaling on the primitives parameters of the MOSFET.
Key Concept(s) to be covered
Overall development of semiconductor industry and on MOSFET miniaturization.
Lost performance metrics such as power, speed and delay of MOSFET scaling.
EXAMPLE

25. In-class Activity Design -2
Active Learning activity(ies) that you plan to do
Real world problem solving using.
Think-Pair-Share
Concept clarification using.
Peer Instruction

26. Q1) Comparison between constant voltage and constant field scaling.
Explain the strategy by giving details of
What Teacher will do?
Pose the two PI questions at the start of the class and provide concept of MOSFET scaling, modeling equations, limitations, advantage and disadvantage.
Q1) Comparison between constant voltage and constant field scaling.
Q2) Generalized quality performance parameters of MOSFET device after scaling.

27. What Student will do?
For each question they will first vote individually.
Then they will discuss with peers and come to consensus.
Listen to instructors explanation.

28. TPS Strategy – What Instructor does
First provide a premise
Using the drain current equation identify what the effect after scaling and comments on improvement factor.
Instruction: Think individually and identify the modelling equations.
Pair (~5 minutes)
Instruction: Now pair up and compare your answers. Agree on one final answer.
While students are pairing and discussing, instructor goes to 2~3 sections to see
what they are doing.
Share (~8 minutes)
Instructor asks a group to share their answer with class and see whether there are different answers. After sharing is done, instructor gives feedback on the correct solution

29. Justify why the above is an active learning strategy
In both the above strategies, students are required to go beyond mere listening and execution of prescribed steps. They are required to think deeply about the content they were familiarized in out-of-class and do higher order thinking.
There is also feedback provided (either through peer discussion or instructor summary)

30. In-class Activity Design -2
Active Learning activity(ies) that you plan to do
Real world problem solving using.
Think-Pair-Share
Concept clarification using.
Peer Instruction
EXAMPLE

31. In-class Activity Design -2
Peer Instruction Strategy – What Teacher Does
Pose the two PI questions at the start of the class and provide summary of basic identities and expression simplification.
Q 1: Power dissipation as given as for constant voltage scaling
(i) P/S
(ii) SP
(iii) P+S
(iv) P-S
EXAMPLE

32. In-class Activity Design -2
Peer Instruction Strategy – What Teacher Does
 Q 2: Power density as given as for constant voltage scaling
(i) S.(P/Area)
(ii) S.(P*Area)
(iii) S^3.(P/Area)
(iv) S^2.(P/Area)
EXAMPLE

33. In-class Activity Design -2
Peer Instruction Strategy – What Student Does
For each question they will first vote individually.
Then they will discuss with peers and come to consensus.
Listen to instructors explanation.
EXAMPLE

34. In-class Activity Design -2
TPS Strategy – What Instructor does
In MOSFET scaling the doping level Nd increase then depletion width decrease. The reason behind that substrate doping length enhance then depletion width reduce then he depletion width inverse relation of doping substrate Nd. That’s’ why doping width is reduce.
EXAMPLE

35. In-class Activity Design -2
TPS Strategy – What Instructor does
Think (~2 minutes)
In constant field scaling of MOS transistor the power dissipation is reduced by factor S^2 because such modeling equation is used as follows
P’= 𝐼′ 𝐷 * 𝑉′ 𝐷𝑆 = 1 𝑆 2 ∗ 𝐼 𝐷 ∗ 𝑉 𝐷𝑆 = 𝑃 𝑆 2
EXAMPLE

36. In-class Activity Design -2
TPS Strategy – What Instructor does
Pair (~5 minutes)
Instruction: Now pair up and compare your answers. Agree on one final answer.
While students are pairing and discussing, instructor goes to 2~3 sections to see
what they are doing.
In constant voltage scaling of MOS transistor the power dissipation is increase by factor S because such modeling equation is used as follows
P’= 𝐼′ 𝐷 * 𝑉′ 𝐷𝑆 =𝑆∗ 𝐼 𝐷 ∗ 𝑉 𝐷𝑆 =𝑆∗𝑃
EXAMPLE

37. In-class Activity Design -2
TPS Strategy – What Instructor does
Share (~8 minutes)
Instructor asks a group to share their answer with class and see whether there are different answers. After sharing is done, instructor gives feedback on the correct solution and analyse the power dissipation modelling equations
In the next iteration of TPS, in the Think Phase we ask students to solve the modelling equations for checking the performance of the device after scaling.
In the pair phase we ask students to compare the answers.
In the share phase again the different answers are sought.
EXAMPLE

38. In-class Activity Design -2
Justify why the above is an active learning strategy
In both the above strategies, students are required to go beyond mere listening and execution of prescribed steps. They are required to think deeply about the content they were familiarized in out-of-class and do higher order thinking.
There is also feedback provided (either through peer discussion or instructor summary)
EXAMPLE