1. MEMS 설계제작 Project
Method of Wafer patterning

2. Location
Nanofab center – TE218

3. Making mask

4. Coat
PR(negative)
Spin Coater

5. Soft bake Hot plate Hot plate Wafer
Improve resist adhesion to the substrate.
Prevent bubbling during subsequent thermal processes.
Hot plate
Wafer
Hot plate

6. Expose
Mask aligner

7. Post expose bake Hot plate Hot plate Wafer
 Decrease standing wave effect.
Hot plate
Wafer
Hot plate

8. Develop
Developer

9. Rinse and dry
Following development, the substrate should be rinsed briefly with isopropyl alcohol (IPA), then dried with a gentle stream of air or nitrogen.
Hard bake
SU-8 has good mechanical properties, therefore hard bakes are normally not required.
For applications where the imaged resist is to be left as part of the final device, the resist may be ramp/step hard baked between °C on a hot plate or in a convection oven to further cross link the material.
Improve roughness of PR.

10. 5월 23일 (최대 2조)
13:00~ 13:30
13:30~ 14:00
14:00~ 14:30
14:30~ 15:00
15:00~ 15:30
15:30~ 16:00
16:00~ 16:30