1. Introduction to Nanoheat; Aspel group

2. TCAD
Collision-dominated  quasi-ballistic

3. Double gate device/ quantum confinement

4. Conduction subband vs. position

5. Electron distribution function vs
Electron distribution function vs. position under high gate bias (top of the barrier)

6. Average electron velocity (high gate bias)

7. Key concepts to develop a ballistic theory

8. E-k relation (top of the barrier) under high gate bias: Vds=0/ small/ large

9. I-V characteristic for ballistic MOSFET (T>0, nondegenerate)

12. Ballistic limit characteristic vs. measured I-V

13. Backscattering at the top of the barrier

14. Average carrier velocity & inversion layer density (ballistic/ with scattering)

15. Effect of scattering within channel

16. Key concepts to develop a scattering theory

17. The scattering model

19. Transmission coefficient under low drain bias

21. Relating mean-free-path to a macroscopic quantity

22. Transmission coefficient under high drain bias

23. Electron injected into the channel undergoing its first scattering event

24. Scattering event in momentum space

25. Probability of it returning to the source

26. Classical ballistic/ quantum ballistic/ drift-diffusion

27. Essential physical picture of steady-state carrier transport in the nanoscale MOSFET
bottleneck

28. Monet Continuum classical heat diffusion equation
Boltzmann transport equation (phonon)
Q’’’: electron-phonon interactions

29. Energy transfer process

30. Monte Carlo simulation
Semi-classical approach
(1) Scattering rate (2) Free flight (F=ma)
Fermi-Golden Rule

31. Heat generation profile (10nm DGSOI)

32. Cornell Aspel group
Primary research area- develop high speed interconnect system for chip-to-chip communication including receivers, transmitters, link architectures in CMOS, and stochastic encoding

33. Optical properties of sapphire substrate
300nm~ (6um)

34. Commercial 850nm GaAs/AlGaAs-quantum-well vertical-cavity surface emitting lasers (VCSELs) and 980nm InGaAs/AlGaAs VCSELs were used as front and back emitting structures, respectively.

35. “A high performance SiGe/Si MQW heterojunction phototransistor,” IEEE Trans. Electron Device (under revision), 2003

36. “A 7mW 1Gbps CMOS Optical Receiver For Through Wafer Communication”, accepted Proceedings of the International Symposium on Circuits and Systems, 2003