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(calculation: see slides 20+ in EC)

Published byHugh Sparks Modified over 6 years ago

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Presentation on theme: "(calculation: see slides 20+ in EC)"β€” Presentation transcript:

1 (calculation: see slides 20+ in EC)
NPN-BJT Collector Base Emitter Collector Base Emitter 𝐼 𝐢 𝐼 𝐸 𝑛 𝑝 𝑛 + 𝑛 p 𝑛 + 𝑉 𝐢𝐢 Out 𝑉 𝐢𝐡 𝐼 𝐡 𝑉 𝐡𝐸 𝑁 𝐷 + βˆ’ 𝑁 𝐴 βˆ’ 𝑅 𝐡2 𝑅 𝐡1 C E 𝑝 𝑛 π‘₯ 𝑝 𝑛0 𝑛 𝑝0 𝑛 𝑝 π‘₯ Collector 𝑛 + 𝑝 𝑛 Base Emitter B-E space charge region C-B space E-field 𝑅 𝐿 𝐺𝑁𝐷 𝑁 𝐷 + βˆ’ 𝑁 𝐴 βˆ’ π‘Š 𝐢 π‘Š 𝐡 π‘Š 𝐸 B π‘Š 𝐢 π‘Š 𝐡 π‘Š 𝐸 π‘₯ π‘Š π‘₯ 𝑁 𝐡 βˆ’ 𝑋 𝐢 𝑋 𝐸 𝐼 𝐢 𝑁 𝐡 𝐸 π‘₯ 𝑉 𝐢𝐢 𝐼 𝐸 𝐸 π‘₯ 𝒆 βˆ’ 𝑅 𝐿 𝑛 𝑝 𝑛 + π‘₯ C B E 𝐺𝑁𝐷 π‘₯ holes 2) electrons get swept by the large E-field ⇒  𝑛 𝑝 0 β‰ˆ0 1) forward biased pn-junction: get concentrations by Shockley boundary conditions 3) Concentration gradient β‡’ diffusion current 𝐼 𝐡 𝐸 𝐹𝐸 𝐸 𝐹𝑖 𝑉 𝐸𝐡 𝒆 βˆ’ 𝐸 𝐹0 𝐸 𝐢 𝑅 𝐡1 𝑅 𝐡2 𝐸 𝐹0 𝐸 𝐹𝑖 simple circuit 𝑉 𝐡𝐢 minority carrier concentrations (This graph explains the basics of the forward active mode. To determine the current amplification 𝛽, set 𝑉 𝐡𝐢 =0. This is just a convention everyone follows!) 𝐸 𝑉 𝐸 𝑉 Common-Emitter circuit (calculation: see slides 20+ in EC) 𝐸 𝐹𝐢 space charge distribution thermal equilibrium 𝐸 𝐢 Emitter Base Collector electric fields due to biasing Emitter Base Collector 𝐼 𝐸 𝐼 𝐢 𝑉 𝐢𝐢 𝑝 + 𝑛 𝑝 𝐺𝑁𝐷 𝑝 + 𝑛 𝑝 Out 𝑅 𝐡2 𝑅 𝐡1 E C 𝑉 𝐸𝐡 𝐼 𝐡 𝑉 𝐡𝐢 band diagram 𝑅 𝐿 B 𝑁 𝐷 + βˆ’ 𝑁 𝐴 βˆ’ 𝑁 𝐷 + βˆ’ 𝑁 𝐴 βˆ’ 𝑛 𝑝 π‘₯ 𝑛 𝑝0 𝑝 𝑛0 𝑝 𝑛 π‘₯ Collector 𝑝 + 𝑛 p Base Emitter E-B space charge region B-C space E-field π‘Š 𝐸 π‘Š 𝐡 π‘Š 𝐢 π‘Š 𝐸 π‘Š 𝐡 π‘Š 𝐢 𝑁 𝐡 𝑁 𝐡 π‘₯ βˆ’ 𝑋 𝐸 𝑋 𝐢 π‘₯ π‘Š 𝑉 𝐢𝐢 𝐼 𝐸 𝐼 𝐢 𝐺𝑁𝐷 holes 𝐸 π‘₯ 𝑝 + 𝑛 𝑝 𝑅 𝐿 𝐸 π‘₯ E B C 𝒆 βˆ’ π‘₯ 𝐼 𝐡 π‘₯ 𝒆 βˆ’ 𝐸 𝐢 𝑅 𝐡1 𝑅 𝐡2 𝐸 𝐹𝐢 based on the slides of the lecture β€žsemiconductor devicesβ€œ by C. Bolognesi compilation by Stefan Rickli Last major update: 𝐸 𝐢 𝐸 𝑉 𝐸 𝐹𝑖 𝒆 βˆ’ 𝒆 βˆ’ 𝑉 𝐡𝐢 𝐸 𝐹𝑖 𝐸 𝑉 𝐸 𝐹0 PNP-BJT 𝐸 𝐹𝐸 𝐸 𝐹0 𝑉 𝐸𝐡

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