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Growth & Characterization
Chromium-induced Ferromagnetism in Topological Crystalline Insulator SnTe Thin Films Shanshan Liu, Weiyi Wang, Cheng Zhang, lu Sun, Yanwen Liu, Zhi-Gang Chen, Enze Zhang, Xiang Yuan, Jin Zou, Faxian Xiu* State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai , China Introduction Results Transport data of pure SnTe Compared to transition-metal doped topological insulator (Bi,Sb)2Te3 of which temperature to achieve a quantized anomalous Hall effect (QAHE) is dramatically restricted to several milli-kelvin, magnetically doped topological crystalline insulator (TCI) SnTe was predicted to possibly possess a high-temperature QAHE state with a much larger quantum Hall conductance. However, the fundamental understanding of the Cr-doping effect and the induced ferromagnetism in this system remains unclear.. Here, we report the high-crystalline magnetic films of Cr-doped SnTe grown by molecular beam epitaxy Ferromagnetism in Cr0.17Sn0.83Te Growth & Characterization SnTe [111] Cr0.17Sn0.83Te [100] Conclusions We have produced high-crystalline SnTe and ferromagnetic Cr-doped SnTe thin films with high crystallinity. The ferromagnetic characteristics have been verified by the butterfly-like negative MR and the anomalous Hall effect. In light of the tunable Fermi level in the exemplar Cr-doped (Bi,Sb)2Te3 system, the anomalous Hall effect achieved in our SnTe thin film samples is promising for high-temperature QAHE and the manipulation of Weyl points or Fermi arcs in semimetals upon the proper chemical doping. *To whom correspondence should be
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