1. MOSFET Solution for SMPS
Fairchild semiconductor
HV PCIA Consumer Power System Team
Aug. 2013
Hello everyone, My name is wonhwa lee, MOSFET and diode product marketer.
Let me introduce Fairchild new MOSFET solution for LED TV and Monitor PSU and BLU from now on.

2. Contents Overview of Super-Junction MOSFET SuperFET® II MOSFET for PSU
600V, 650V and 800V MOSFET
MV MOSFET for LED BLU and SR
BoostPak solution for LED BLU
Appendix
800V SuperFET® II Evaluation Result
500V & 600V UniFETTM II (planar MOSFET) Line up
Ordering Information
At first, Let me explain the overview of SJ MOSFET compared and then introduce SuperFET2 MOSFET, the latest FSC SJ MOSFET.
There are 600V, 650V and 800V MOSFETs. 600V and 650V MOSFET will be released within this year and 800V MOSFET by next year.
And then introduce MV MOSFET and BoostPak solution for LED BLU. Expecially, BoostPak solution includes one MOSFET and one diode in on package for LED boost up block. Our Application engineer will give a presentation of the evaluation result with demo board.

3. Overview of Super-Junction MOSFET

4. Overview of Super Junction MOSFET
Provides lower conduction and switching losses
Robust and better body diode Performance
Enable high power density and efficiency for power conversion systems.
Lowest board space consumption and reduced component costs -5 5 10 15 20 25 30 35 40 45 50 55 60
100
200
300
400
500
600
700
Breakdown Voltage (V)
Specific Rdson [mohm-cm2]
Planar MOSFET
A near linear relation between Rds(on) and Breakdown Voltage
A significant reduction of conduction and switching losses
High power density for high-end application.
Super Junction MOSFET
These two drawing shows the vertical structure of planar MOSFET and super junction MOSFET.
Top side is source electrode and yellow part is gate electrode and bottom side is drain electrode. In case n-channel MOSFET, current flow from Drain electrode to source through n- drift area and channel under gate electrode vertically.
You can see deep p-well like this in SJ MOSFET unlike planar MOSFET. This reduce the resistivity of n- drift area dramatically.
SJ MOSFET has much lower Rdson than planar MOSFET based on same chip size and breakdonw voltage.
This plot shows Rdon per cm2 chip size by different breakdown voltage. The Rdson of Plana MOSFET is increased exponentially but that of SJ MOSFET is increased linearly as breakdown voltage goes up. So, SJ MOSFET can achieve ver low Rdson in small package in over 600V breakdown voltage area. And SJ MOSFET has more merits like lower Qg and body diode performance as well as lower Rdson.
In case of 600V MOSFET, SJ MOSFET has around 30% Qg of that of planar MOSFET based on same Rdson.
So SJ MOSFET switching speed is faster than planar MOSFET. That means SJ MOSFET can improve system efficiency by reducing switching loss.

5. SuperFET® II MOSFET Feature and Family
600V / 650V / 800V Super Junction technology
Lower Output Capacitance  Higher efficiency in light load conditions
Higher body diode ruggedness and smaller reverse recovery charge (Qrr)
 Better reliable system in resonant converter
Family
SuperFET® II - Easy Driving Series (Optimized switching)
Ex) FCPF190N60E
- Easy to design due to controlled dv/dt and di/dt at high current
 Replace SuperFET® MOSFET
SuperFET® II (Fast switching)
Ex) FCPF190N60
- Maximize system efficiency but reduce gate ringing than SupreMOS® MOSFET
 Replace SupreMOS® MOSFET
Fast Recovery SuperFET® II
Ex) FCPF190N60F
This slide shows SuperFET2 MOSFET feature and Family.

6. SuperFET® II MOSFET for PSU

7. SuperFET® II Release Schedule (1)
SuperFET® II - Easy Driving Series (Optimized switching)
Product Name
BVdss
Rdson (max)
Package　
Eng. sample
Release
FCH041N60E
600 V
41 mohm
TO247
Available
Released
FCP/PF190N60E
190 mohm
TO220 / TO220F
FCP/PF260N60E
260 mohm
FCP/PF380N60E
380 mohm
FCD380N60E
DPAK
SuperFET® II (Fast switching)
Product Name
BVdss
Rdson (max)
Package　
Eng. sample
Release
FCH041N60
600 V
41 mohm
TO247
Q4 '13
FCH070N60
70 mohm
FCH/P099N60
99 mohm
TO247/TO220
FCH125N60
125 mohm
FCH165N60
165 mohm
FCP/PF190N60
199 mohm
TO220 / TO220F
Available
Released
FCP/PF380N60
380 mohm
FCPF400N60
400 mohm
TO220F
FCP/PF600N60
600 mohm
FCD600N60Z
DPAK
FCD/U900N60Z
900 mohm
DPAK / IPAK (S)
* Surffix Z : internal zener diode

8. SuperFET® II Release Schedule (2)
600/650V Fast Recovery SuperFET® II
Product Name
BVdss
Rdson (max)
Package　
Eng. sample
Release
FCH041N60F
600 V
41 mohm
TO247
Available
Released
FCH072N60F
72 mohm
FCH104N60F
104 mohm
FCP104N60F
TO220
Q3 '13
Q4 '13
FCD620N60ZF
620 mohm
DPAK
FCH041N65F
650 V
Q1 '14
Q2 '14
FCH077N65F
77 mohm
FCH110N65F
110 mohm
FCP110N65F
FCB109N65F
D2PAK
FCP150N65F
150 mohm
FCH190N65F
190 mohm
FCP190N65F
FCPF190N65F
TO220F
FCPF260N65F
260 mohm
FCPF380N65F
380 mohm
* Surffix Z : internal zener diode

9. SuperFET® II Release Schedule (3)
800V SuperFET® II (Fast switching)
Product Name
BVdss
Rdson (max)
Package　
Eng. sample
Release
FCPF4300N80Z
800 V
4300 mohm
TO220F
Q1 '14
Q2 '14
FCD2400N80Z
2400 mohm
DPAK
Q3 '14
FCPF2400N80Z
FCD1300N80Z
1300 mohm
FCPF1300N80Z
FCD900N80Z
900 mohm
FCPF900N80Z
FCPF650N80Z
650 mohm
FCPF400N80Z
400 mohm
Available
Q4 '13
FCH400N80Z
TO247
* Suffix Z : internal zener diode

10. MV MOSFET for LED BLU & SR

11. Fairchild MV MOSFET History
UltraFET Trench
PowerTrench® 3
PowerTrench® 5 & 7
X 4 Cell density
Charge Balance technology
Reduces Epi Resistance
Enhanced MOSFET RDS(ON) x QG
FOM providing lower overall
conduction and switching losses.
X1 Cell density
X 2 Cell density
Increased Cell Density
Reduces Rds(on)

12. New PowerTrench® MOSFET Line up (1)
New PowerTrench® MOSFET(40V)
Technology
Part # BV
Rdson (max)
Qg (typ.)
Package
Release Plan
(V)
(mohm)
(nC)
Eng. sample
Release
　PowerTrench®
FDMS015N04B 40
1.5 87
PQFN56
Available
Released
New PowerTrench® MOSFET (60V, 75V and 80V)
Technology
Part # BV
Rdson (max)
Qg (typ.)
Package
Release Plan
(V)
(mohm)
(nC)
Eng. sample
Release
PowerTrench®
FDP020N06B 60 2
204
TO220
Available
Released
FDMS030N06B
3.0 79
PQFN56
FDP030N06B
3.1 76
FDPF035N06B_F152
3.5
TO220F
FDP023N08B 75
2.35
146
FDP027N08B 80
2.7
137
FDB024N08BL7
2.4
D2PAK-7L
FDP032N08B
3.3
111
FDMS037N08B
3.7
76.8
FDMS039N08B
3.9 77
FDP039N08B 95
FDP053N08B
5.3 61

13. New PowerTrench® MOSFET Line up (2)
New PowerTrench® MOSFET(100V and 150V)
Technology
Part # BV
Rdson (max)
Qg (typ.)
Package
Release Plan
(V)
(mohm)
(nC)
Eng. sample
Release
PowerTrench®
FDB035N10A
100
3.5 89
D2PAK
Available
Released
　100V/150V
FDP036N10A
3.6
TO220
FDP045N10A
4.5 65
FDPF045N10A
TO220F
FDP085N10A
8.5 31
FDPF085N10A
FDP150N10A 15
16.2
FDD1600N10ALZ
160
2.78
DPAK
FDT1600N10ALZ
SOT223
FDH055N15A
150
5.9 92
TO247
FDP075N15A
7.5 77
FDB075N15A
FDP083N15A
8.3
64.5
FDB082N15A
FDB110N15A 11 41
FDPF190N15A 19 30
FDB390N15A 39
14.3
FDPF390N15A
FDD390N15A
FDD390N15ALZ 42
17.6
FDPF770N15A
8.6
FDD770N15A

14. BoostPak Solution for LED BLU

15. BoostPak Solution for LED BLU
24V +
MOSFET
SBD
BoostPak
Benefits
Reduce PCB size (up to 20mm * 20mm)
Less assembly work
Better reliability with much lower diode leakage current than existing SBD
Product ID
BVDSS [V]
RDS(on) max [mΩ]
Package
Po [W]
ID [A]
Qg [nC]
Release Plan
Eng. sample
Release
FDD850N10LD
100 75
DPAK 5lead
~ 40W
15.3
22.2
Available
Released
FDD1600N10ALZD
160
~ 25W
6.8
2.78
* Target Applications : LED monitors, LED TVs <37”

16. Leakage current (typ.) @VR=100V
BoostPak Solution for LED BLU
- Diode Leakage Current
150V 5A NP diode
of BoostPak
TJ= 25 ℃
TJ= 100 ℃
TJ= 150 ℃
100V 5A
Schottky Diode
100V 5A
Schottky Diode
100V 5A
Schottky Diode
150V 5A NP diode
of BoostPak
150V 5A NP diode
of BoostPak
Reverse Voltage, VR [V]
Reverse Voltage, VR [V]
Reverse Voltage, VR [V]
Leakage current
@TJ =25℃
@TJ =100℃
@TJ =150℃
100V 5A Schottky Diode
0.740 uA uA uA
150V 5A NP Diode of BoostPak
0.003 uA
0.30 uA
4.81 uA

17. BoostPak Solution for LED BLU - Electrical specification
FDD1600N10ALZD (100V, 6.8A, 160mΩ)
BoostPak (N-channel Power Trench® MOSFET + Diode)
Maximum Ratings
TC=25oC unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS
D-S Voltage
100 V
VGSS
G-S Voltage
±20 ID
Drain Current
Continuous
6.8 A
EAS
Pulsed
13.6
IF(AV)
Diode Average Rectified Forward 4
IFSM
Diode Non-repetitive Peak Surge 40
RθJC
Thermal Resistance, J-C for MOSFET
8.4
oC/W
Thermal Resistance, J-C for Diode
3.3
Electrical Characteristics
VGS(th)
Gate Threshold Voltage, Max.
2.8
RDS(on)
Static D-S On Resistance, Max.
160 mΩ
Crss
Reverse Transfer Capacitance, Typ.
2.04 pF
Qg(tot)
Total Gate Charge at 10V, Typ.
2.78 nC
VSD
D-S Diode Forward Voltage, Max.
1.3
trr
D-S Diode Reverse Recovery Time, Typ. 37 ns VR
DC Blocking Voltage of Diode, Min.
150
VFM
Max. Forward Voltage of Diode, Max.
2.5
IRM
Max. Reverse Current of Diode, Max. 50 uA
Reverse Recovery Time of Diode, Max. 26
FDD850N10LD (100V, 15.3A, 75mΩ)
BoostPak (N-channel Power Trench® MOSFET + Diode)
Maximum Ratings
TC=25oC unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS
D-S Voltage
100 V
VGSS
G-S Voltage
±20 ID
Drain Current
Continuous
15.3 A
EAS
Pulsed 46
IF(AV)
Diode Average Rectified Forward 5
IFSM
Diode Non-repetitive Peak Surge 50
RθJC
Thermal Resistance, J-C for MOSFET
3.0
oC/W
Thermal Resistance, J-C for Diode
2.5
Electrical Characteristics
VGS(th)
Gate Threshold Voltage, Max.
RDS(on)
Static D-S On Resistance, Max. 75 mΩ
Crss
Reverse Transfer Capacitance, Typ. 42 pF
Qg(tot)
Total Gate Charge at 10V, Typ.
22.2 nC
VSD
D-S Diode Forward Voltage, Max.
1.3
trr
D-S Diode Reverse Recovery Time, Typ. 38 ns VR
DC Blocking Voltage of Diode, Min.
150
VFM
Max. Forward Voltage of Diode, Max.
IRM
Max. Reverse Current of Diode, Max. uA
Reverse Recovery Time of Diode, Max. 22

18. BoostPak Solution for LED BLU - Evaluation board
Top View (114 x 76 mm2)
* User guide :

19. BoostPak Solution for LED BLU - Evaluation Result
FDD850N10LD (100V, 15.3A, 75mΩ)
Temperature Test
Loss Analysis
FDD850N10LD (100V, 15.3A, 75mΩ)
Waveforms Test
EMI Test
Vin
Vout
Iout
Pout Q1
Ref.
24V
55V
0.64A
35.2W
61.5oC
25oC
Pon
Pcond
Poff
Ptot
[%]
MOSFET
0.17W
0.14W
0.11W
0.42W
31.1
Diode
0.02W
0.53W
0.38W
0.93W
68.9
FDD1600N10ALZD (100V, 6.8A, 160mΩ)
Temperature Test
Loss Analysis
Adjustment parameters
Switching Frequency Setting of DC/DC block
Gate Drive Voltage Setting
The gate voltage level of MOSFET is determined by ZD1.
The minimum level is about 8.5V caused by UVLO range
of main control IC.
Operating LED Current Setting
If you want to reduce the LED current at initial setting,
then you have two methods that are
① reducing # of RISENSE(R45 ~ R52).
② increasing the value of R41.
Vin
Vout
Iout
Pout Q1
Ref.
20V
45V
0.56A
25.2W
57.8oC
25oC
Pon
Pcond
Poff
Ptot
[%]
MOSFET
0.05W
0.16W
0.02W
0.23W
23.96
Diode
0.01W
0.45W
0.26W
0.73W
76.04

20. 800V SuperFET® II Evaluation Result
Appendix
800V SuperFET® II Evaluation Result
500V & 600V UniFETTM II (planar MOSFET) Line up
Ordering Information

21. 800V SuperFET® II Evaluation Result

22. SuperFET® II 800V (FCPF400N80Z) - Key Parameters
Datasheet Parameter comparison table
Parameter
800V MOSFET
FCPF400N80Z
I company
BVDSS
800 V ID
11 A
VGS(th)
2.5~4.5 V
2.1~3.9 V
RDS(ON) (Max.)
400 mohm
450 mohm
Qg (Typ.)
41.4 nC
64.0 nC
FOM [RDS(ON)×Qg]
16.56 Ω ·nC
28.8 Ω · nC
Qgs (Typ.)
8.7 nC
8.0 nC
Qgd (Typ.)
15.1 nC
30.0 nC
EOSS at 400V
4.25 μJ
4.96 μJ
Zener diode b/w gate and source
Exist
None

23. SuperFET® II 800V (FCPF400N80Z) - Gate Charge
Item P/N Qg
[nC]
Qgs
Qgd
@Vds=480V,Id=11A
FCPF400N80Z
41.4
8.67
15.1
I company
60.7
8.1
28.2

24. SuperFET® II 800V (FCPF400N80Z) - Coss Stored Energy : Eoss
Item P/N
Eoss [uJ]
@Vds
100V
200V
400V
600V
FCPF400N80Z
1.50
2.15
4.25
7.24
I company
1.47
2.38
4.96
8.53

25. AC & DC Test data of Q1 (Measured data)
SuperFET® II 800V (FCP400N80Z)
- Application Evaluation
PCB Model : 210W Audio power board(Flyback)
Test Condition
Vin: 220Vac/ 60Hz,
Pin : 210W / Vout=+/- 63V(1.5A)
Rg.on=82Ω+Lbead, Rg.off=10//82Ω +Lbead
Cds_ext=470pF
Test Results
Temp. profile
Item P/N
PKG
Case Temperature
Power Loss[W] of Q1
AC & DC Test data of Q1 (Measured data)
Q1 [℃]
Q2 [℃]
Pon
Pcond
Poff
Total
BV[V]
Int. Rg [Ω]
Vth [V]
Rds on [mΩ]
Qg [nC]
Qgd [nC]
FCP400N80Z
TO-220
59.8
61.9
0.757
0.066
0.073
0.895
898
1.03
3.66
41.4
15.1
I company
61.1
63.2
0.762
0.068
0.123
0.953
1.31
3.02
60.7

26. - Application Evaluation
SuperFET® II 800V (FCP400N80Z)
- Application Evaluation
FCP400N80Z Turn on Turn off
I company Turn on Turn off
Comparison
Turn on
Turn off
[1us/div]
Vgs[5V/div]
Vds[100V/div]
Id[1A/div]
Time[10us/div]
Time[500ns/div]
Time[50ns/div]
[50ns/div]
Vgs[5V/div]
Vds[100V/div]
Id[1A/div]
Time[10us/div]
Time[500ns/div]
Time[50ns/div]
FCP400N80Z
FCP400N80Z
I company
I company
Time[50ns/div]
Time[50ns/div]

27. 500V & 600V UniFETTM II Line up

28. 500V & 600V UniFETTM II Line up Product name BVdss Rdson (max) Package
Eng. Sample
Release
FDPF3N50NZ
500 V
2.5 ohm
TO220F
Available
Released
FDD3N50NZ
DPAK
FDP/PF5N50NZ
1.5 ohm
TO220/F
FDD5N50NZ
FDP/PF8N50NZ
0.85 ohm
FDD8N50NZ
FDP12N50NZ
0.52 ohm
TO220
FDPF12N50NZ
FDP22N50N
0.21 ohm
FDPF4N60NZ
600 V
FDD4N60NZ
FDP5N60NZ
2.0 ohm
FDPF5N60NZ
FDD5N60NZ
FDP7N60NZ
1.25 ohm
FDPF7N60NZ
FDD/U7N60NZ
D/IPAK
FDP10N60NZ
0.75 ohm
FDPF10N60NZ
FDP12N60NZ
0.65 ohm
FDPF12N60NZ
FDPF17N60N
0.34 ohm
* Surffix Z : internal zener diode

29. Ordering Information

30. Super-Junction MOSFETs Ordering Information16 N
SuperFET® I / SupreMOS® MOSFET
Empty: SuperFET® I MOSFET
N : SupreMOS® MOSFET
Voltage Rating ( × 10 )
Current Rating [A]
Channel Polarity
N : N-Channel
P : P-Channel
Package
A : TO-3P
B : D2-PAK
D : D-PAK
E : TO-126
H : TO-247
N : TO-92
Super-Junction Technology
P : TO-220
MT : PQFN88
AF : TO-3PF
PF : TO-220F
I : I2-PAK
U : I-PAK 60
190 E
RDS(ON) Max. [mΩ]
Fairchild Semiconductor
Body diode Type
Empty : NormalFET (Trr : 180~200ns)
F : FRFET (Trr : 80~100ns)
U : Ultra FRFET (Trr : 40~50ns)
SuperFET® II MOSFET
Empty: SuperFET® II MOSFET
E : SuperFET® II MOSFET - Easy Drive

31. MV MOSFETs Ordering InformationP
030 N
PowerTrench Generation
Empty: PowerTrench® 3
A: PowerTrench® 5
B: PowerTrench® 7
C: PowerTrench® Next Generation
Voltage Rating ( × 10 )
Channel Polarity
N : N-Channel
P : P-Channel
Package
A : TO-3P
B : D2-PAK
D : D-PAK
MS : PQFN56
H : TO-247
N : TO-92
DMOS
P : TO-220
S : 8-SOP
AF : TO-3PF
PF : TO-220F
I : I2-PAK
U : I-PAK 10
RDS(ON) Max. [mΩ]
Fairchild A L7
Option
L7 : D2-PAK 7lead

32. Contact Information
Marketer:
- Wonhwa Lee
Application Engineer:
- JT Lee
- Sungnam Kim

33. twitter.com/fairchildSemi