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Second Workshop on Photocathodes: 300nm-500nm
June 29-30, 2012 University of Chicago Enrico Fermi Institute, The University of Chicago High Energy Physics Division at ANL
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Goals of the Workshop The proposed goals of the workshop are to:
Understand deeply the chemistry and physics of alkali photocathodes. Discuss/propose experiments, measurements and theory that would answer remaining questions; Foster collaborative efforts to bring a broad and powerful variety of photodetectors with high QE into the application areas. Or Google: University of Chicago Photocathode 11/8/2018 2nd Photocathode Workshop
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Neutrino Physics Need: lower the cost and extend the reach of large neutrino detectors H. Nicholson Large area Cheap High QE over broad spectrum Compatible with MCP assembly process
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Razmik Mirzoyan, Max-Planck-Munich: Highest QE PhotoCathodes
Quantum Efficiency Quantum efficiency (QE) of a sensor is defined as the ratio QE = N(ph.e.) : N(photons) Conversion of a photon into ph.e. is a purely binomial process (and not poisson !) Assume N photons are impinging onto a photocathode and every photon has the same probability P to kick out a ph.e.. Then the mean number of ph.e.s is N x P and the Variance is equal to N x P x (1 – P) 29th of June 2012, Univ. Chicago Razmik Mirzoyan, Max-Planck-Munich: Highest QE PhotoCathodes
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QE: Short Historical Excursion
Sommers found the „multialkali“ effect: combination of Cs-K-Na-Sb has high QE in the visible spectrum. Also were discovered Cs3Sb on MnO (S11, lpeak 400nm, QE ~ 20%) (Cs)Na2KSb (S20, lpeak 400nm, QE ~ 30%) K2CsSb (lpeak 400nm, QE ~ 30%) K2CsSb(O) (lpeak 400nm, QE ~ 35%) 29th of June 2012, Univ. Chicago Razmik Mirzoyan, Max-Planck-Munich: Highest QE PhotoCathodes
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How it shall be possible to boost the QE and who is interested in it ?
Use of highly purified materials for photo cathode (provides lower scattering for e- (low recombination probability) → e- kicked out from deeper (top) layers can reach photo cathode-vacuum junction ¬_ and „jump“ into it (→ thicker cathode is possible). Optimal tuning of the photo cathode thickness ……of the structure and material composition ……of the anti-reflective layer ……? 29th of June 2012, Univ. Chicago Razmik Mirzoyan, Max-Planck-Munich: Highest QE PhotoCathodes
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Parameters, and how to affect them
Reflectivity depends on angle of incidence and cathode thickness. Though already small, structuring of the photocathode can further reduce loss due to reflection. Increasing the electron MFP will improve the QE. Phonon scattering cannot be removed, but a more perfect crystal can reduce defect and impurity scattering: A question to consider: Why can CsI (another ionic crystal, PEA cathode) achieve QE>80%? Large band gap and small electron affinity play a role, but, so does crystal quality. R. Downey, P.D. Townsend, and L. Valberg, phys. stat. sol. (c) 2, 645 (2005) T.H. Di Stefano and W.E. Spicer, Phys. Rev. B 7, 1554 (1973) J. Smedley
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Inès Montaño Sandia National Laboratories
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~1-2 nm of K & Sb per layer – subcrystaline
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Metallic Cesium Source Construction
Charlie Sinclair
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In Situ Measurement Techniques
3 Talks (Matt Highland and Jeffrey Elam of ANL, and Miguel Ruiz Osés of Stony Brook) XRD (and CTR), XRR, XPS, XRF, XAS, AFM, Elipsometry Want to measure thickness, roughness, stoichometry, crystalline phase, grain size and orientation, chemical purity
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Probing the Growth Environment
Synchrotron x-rays are capable to penetrating the MOCVD environment and yield structural and elemental details in real time In-situ MOCVD reactor at sector 12ID-D of the Advanced Photon Source Diffraction from GaN surfaces and InN crystals X-ray Fluorescence from deposited Indium Measurements reveal a very complex growth behavior Fluorescence Detector Movie camera Visible illumination Synchrotron x-rays Scattering Detector 16 Matt Highland 16
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In-InN Phase Boundaries
By monitoring InN and In liquid formation we can map out an indium condensation phase diagram Bare GaN surface In liquid droplets pNH3= 27 Torr InN crystals Upon increasing TMI flow At higher temp, elemental In liquid condenses At lower T, relaxed InN solid particles grow F. Jiang, et al. PRL 101, (2008)
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Oscillatory Growth and Decomposition
Near phase boundaries system can spontaneously oscillate Inter-conversion between InN and liquid In AFM of quenched samples shows microstructure of distinct surface species Epitaxial InN islands Elemental In droplets F. Jiang, et al. PRL 101, (2008)
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Oscillatory Growth Mechanism
NH3 cracks on the GaN of InN surface and forms the intermediate species that allow InN to grow Critical amount of liquid In metal condenses which accelerates conversion of NH3to N2 and InN starts to decompose Liquid In metal evaporates to expose GaN surface and InN growth starts again
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The Fundamental Problem
At desirable growth temperatures required nitrogen activity is equivalent to kilobars (~104 psi) of N2 During MOCVD growth nitrogen activity provided by cracking ammonia Reaction we want to avoid: Ambacher et al., JVST B 14, 3532 (1996) 20
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Charlie Sinclair Cornell University (ret.)
Alkali Metal Sources for Photocathodes and their Quantification – Getter Sources vs. Metallic Evaporation Sources Charlie Sinclair Cornell University (ret.) 11/8/2018 UChicago Photocathode Workshop
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Operation of Metallic Cs Source
Maintain delivery tube and nozzle at ~ 250 C, valve at about 230 C, and Cs tube to give desired vapor pressure. Temperature maintained continuously, resulting in fairly quick response (seconds) to opening the valve Delivered ~ 1 monolayer (for GaAs cathode) in ~ 1 minute Used to make uniform QE on 35 mm GaAs by bouncing Cs off heated plate 11/8/2018 UChicago Photocathode Workshop
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Quartz Crystal Microbalance
Resonant frequency shifts downward as mass is added. For our 6 MHz crystal, 10 Hz is ~ 100 ngm ~ 1 monolayer of Cs. Uncertainties are the number of atoms per monolayer, and the sticking coefficient (~1 for alkalis) Measured at ~ 290 K and 77K, getting same result, implying a sticking coefficient ~ 1 11/8/2018 UChicago Photocathode Workshop
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