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طراحي و ساخت تراشه هاي VLSI (Design and Fabrication)

Published byΣιλουανός Παπάζογλου Modified over 6 years ago

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Presentation on theme: "طراحي و ساخت تراشه هاي VLSI (Design and Fabrication)"— Presentation transcript:

1 طراحي و ساخت تراشه هاي VLSI (Design and Fabrication)

2 ساختار ترانزيستور nMOS

3 ساخت ترانزيستور هنگام رشد بلور، ناخالصي (نوع p) به آن داده مي شود. ناخالصي مثلاً بُر رشد يک لايه ي SiO2 بر سراسر ويفر. فوايد: عايق براي نشاندن لايه هاي ديگر و مانعي براي ناخالصي ها. زدودن قسمتي که ميخواهيم ترانزيستور در آن شکل گيرد. رشد يک لايه ي نازک SiO2

4 ساخت ترانزيستور روي لايه ي نازک SiO2 (Thinox) پلي سيليکون مي نشانيم (گيت ترانزيستور). بقيه اکسيد نازک را برمي داريم. در نتيجه نواحي مربوط به تشکيل نفوذ n رو باز مي مانند. پلي و تيناکس زير آن و اکسيد ضخيم (Fox) (Field Oxide) نقش نقاب را بازي مي کنند.

5 ساخت ترانزيستور عمل نفوذ (diffusion) :
نواحي سورس و درين تشکيل مي شوند.

6 ساخت ترانزيستور رشد دوباره ي Fox براي عايق بندي.

7 ساخت ترانزيستور باز گذاشتن محلهايي براي قرار دادن اتصالات.

8 ساخت ترانزيستور نشاندن فلز (Al) روي سطح ويفر با الگوي مطلوب.

9 الگوبندي

10 الگوبندي

11 الگوبندي

12 الگوبندي

13 الگوبندي

14 فلز سطح دوم براي فلز سطح دوم، روي ويفر با Fox پوشانده مي شود.
جاهايي که فلز سطح 2 بايد به فلز سطح 1 متصل باشد حفره هايي به نام Via Cut ايجاد مي شوند. فلز سطح 2 ايجاد و الگوبندي مي شود.

15 اتصالات چندلايه

16 اتصالات چندلايه ي مسي

17 ساخت ترانزيستور

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